ABSTRACT SURI, RAHUL. Device Design of Sub‐100nm Fully‐depleted Silicon‐on‐Insulator (SOI) Devices Based on High‐k Epitaxial‐Buried Oxide. (Under the direction of Dr. Veena Misra). …
Slide 118 July 2001 Work In Progress – Not for Publication 2001 ITRS Front End Process July 18, 2001 San Francisco, CA Slide 2 18 July 2001 Work In Progress – Not for…
Slide 12001 ITRS Front End Process November 29, 2001 Santa Clara, CA Slide 2 FEP Chapter Scope The scope of the FEP Chapter of the ITRS is to define comprehensive future…
1. FinFETTECHNOLOGY 2. INTRODUCTION Since the fabrication of MOSFET, the minimum channel length has been shrinking continuously.As devices shrink further and further, the…