FinFET

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FinFET

Qin Zhang

EE 666

04/19/2005

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Outline

• Introduction

• Design

• Fabrication

• Performance

• Summary

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IntroductionDouble-gate FET (DGFET) can reduce Short Channel Effects (SCEs)

– Reduce Drain-Induced-Barrier-Lowering

– Improve Subthreshold Swing S

Medici-predicted DIBL and subthreshold swing versus effective channel length for DG and bulk-silicon nFETs

E J Nowak, I Aller, T Ludwig, K Kim R V Joshi, C-T Chuang, K Bernstein and R Puri, IEEE Circuits and Dev. Magazine, p20-31, Jan/Feb 2004

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IntroductionThree Types of Double-gate FET

J Kretz, L Dreeskornfeld, J Hartwich, and W Rosner, Microelectronic Eng. 67-68, p763-768, 2003

Quasi-COMS structureRelatively simple FAB

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IntroductionFirst FinFET - DELTA (DEpleted Lean-channel TrAnsistor)

D.Hisamoto, T.Kaga, Y.Kawamoto, and E.Takeda, IEEE Electron Dev. Lett., vol.11, no.1, p36-38, Jan 1990

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Design - Geometry

Gen Pei, et al., IEEE Trans on Electron Dev., vol.49, no.8, p1411-1419, 2002

Effective channel length Leff = Lgate + 2×Lext

Effective channel width W = Tfin + 2×HfinH -J L Gossmann, et al., IEEE Trans on Nanotechnology, vol.2, no.4, p 285-290, 2003

Hfin >> Tfin

Top gate oxide thickness >> sidewall oxide thickness

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Design - Dependence of Vth and S Swing on Hfin

Gen Pei, et al., IEEE Trans on Electron Dev., vol.49, no.8, p1411-1419, 2002

• The saturation of Vth roll-off and S is observed when Hfin is increased from 20 nm to 90 nm

• The critical Hfin needed for saturation is dependent on Tfin

• For larger Tfin, the critical Hfin is correspondingly larger

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Design - Dependence of Vth and S Swing on Tfin

• Vth roll-off and S change more and more rapidly as Tfin changing from 10 nm to 60 nm, and slow down after that• Fin thickness reduce can suppress short channel effects, but the variation will change the performance of the device a lot

Gen Pei, et al., IEEE Trans on Electron Dev., vol.49, no.8, p1411-1419, 2002

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Design - SCEs with Leff/Tfin

Kidong Kim, et al., Japanese J of Appl. Phys., vol.43, no.6B, p3784-3789, 2004

Leff/Tfin > 1.5 is desirable

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Design - Other Optimization• Nonrectangular Fin

– Hydrogen annealing to round off the corners

• Source-Drain Fin-Extension Doping– Tradeoff regarding SCEs and S/D series resistance

• Dielectric Thickness Scaling• Threshold Voltage Control

– Channel doping with symmetric poly-Si gate– Asymmetric poly-Si gate– Metal gate

Xusheng Wu, IEEE Trans on Electron Dev., vol.52, no.1, p63-68, 2005Weize Xiong, et al., IEEE Electron Dev. Lett., vol.25, no.8, p541-543, 2004

Vishal Trivedi, IEEE Trans on Electron Dev., vol.52, no.1, p56-62, 2005Jakub Kedzierski, et al., IEEE Trans on Electron Dev., vol.51, no.12, p2115-2120, 2004

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Fabrication6.5 nm Si fin by Berkeley Team

---- Smallest in 2002

Yang-Kyu Choi et al., Solid-State Electronics 46, p1595-1601, 2002

Poly-Si

Si fin

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Fabrication - Spacer Lithography

Yang-Kyu Choi et al., Solid-State Electronics 46, p1595-1601, 2002

The thickness of spacer at the sidewalls determines the fin thickness

Alternative: Electron Beam Lithography (20nm gate length and 15nm fin thickness was achieved)

W Rosner, et al., Solid-State Electronics 48, p1819-1823, 2004

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Fabrication - Process Flow

Chenming Hu, et al. Dept. of EECS, UC-Berkeley, IEDM, p251-254, 2002

“Easy in concept----Tough to build”

(a) SiN is deposited as a hard mask,SiO2 cap is used to relieve the stress.

(b) Si fin is patterned

(c) A thin sacrificial SiO2 is grown

(d) The sacrificial oxide is stripped completely to remove etch damage

(e) Gate oxide is grown

(f) Poly-Si gate is formed

10 nm gate length, 12 nm fin width

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Performance

Chenming Hu, et al. Dept. of EECS, UC-Berkeley, IEDM, p251-254, 2002

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Performance - IV Characteristics

•The drive currents are 446 uA/um for n-FinFET and 356 uA/um for p-FinFET respectively•The peak transconductance of the p-FinFET is very high (633uS/um at 105 nm Lg), because the hole mobility in the (110) channel is enhanced

Chenming Hu, et al. Dept. of EECS, UC-Berkeley, IEDM, p251-254, 2002

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Performance - Speed and Leakage

•Gate Delay is 0.34 ps for n-FET and 0.43 ps for p-FET respectively at 10 nm Lg

Chenming Hu, et al. Dept. of EECS, UC-Berkeley, IEDM, p251-254, 2002

•Gate leakage current is comparable to planar FET with the same gate oxide thickness

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Performance - Short Channel Effects

Chenming Hu, et al. Dept. of EECS, UC-Berkeley, IEDM, p251-254, 2002

•The subthreshold slope is 125 mV/dec for n-FET and 101 mV/dec for p-FET respectively•The DIBL is 71 mV/V n-FET and 120 mV/V for p-FET respectively

Medici-predicted DIBL and subthreshold swing versus effective channel length for DG and bulk-silicon nFETs

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Summary

• Double-gate FET can reduce Short Channel Effects

and FinFET is the leading DGFET

• Optimization design includes geometry, S-D fin-extension doping, dielectric thickness scaling, threshold voltage control….

• Fabrication of FinFET is compatible with CMOS process

• 10 nm gate length, 12 nm fin width device has been fabricated and shows good performance

“Easy in concept----Tough to build”