* FinFET Qin Zhang EE 666 04/19/2005 * Outline Introduction Design Fabrication Performance Summary * Introduction Double-gate FET (DGFET) can reduce Short Channel Effects…

FinFET Qin Zhang EE 666 04/19/2005 Outline Introduction Design Fabrication Performance Summary Introduction Double-gate FET (DGFET) can reduce Short Channel Effects (SCEs)…

Slide 1 Analytical Modeling of RF Noise in MOSFETs – A Review S. Asgaran and M. Jamal Deen Electrical and Computer Engineering, CRL 226 McMaster University, Hamilton, ON…

Novel high-k materials Can we nominate candidates for the 22 and the 16 nm nodes? Olof Engstrom Chalmers University of Technology Paul Hurley Tyndall National Institute Octavian…

FinFET Qin Zhang EE 666 04/19/2005 Outline Introduction Design Fabrication Performance Summary Introduction Double-gate FET (DGFET) can reduce Short Channel Effects (SCEs)…