1. Carlos M. Fernandes1,2 J.L.J. Laredo3J.J. Merelo2 Carlos Cotta4 Agostinho C. Rosa1 1LaSEEB-ISR-IST,University of Lisbon (IST), Portugal Departamento de Arquitectura y…
Effects of Switched-Bias Annealing on Charge Trapping in HfO2 high- Gate Dielectrics X. J. Zhou,a D. M. Fleetwood,a L. Tsetseris,b R. D. Schrimpf,a S. T. Pantelidesb a…
Effects of Switched-Bias Annealing on Charge Trapping in HfO2 high- Gate Dielectrics X. J. Zhou,a D. M. Fleetwood,a L. Tsetseris,b R. D. Schrimpf,a S. T. Pantelidesb a…