1. FINFET 2. INTRODUCTION TO FINFET • The term “FINFET” describes a nonplanar, double gate transistor built on an SOI substrate, based on the single gate transistor…
The third version of BSIM (Berkeley short channel IGFET model). The BSIM-3 model was developed for submicron devices. It has approximately 120 parameter , each having…
* Silicon on Insulator (SOI) Based Devices – Part 2 Amitava DasGupta Department of Electrical Engineering I.I.T. Madras Chennai – 600037 [email protected] * Short channel…
Slide 1 Chapter 2 Modern CMOS technology 1.Introduction. 2.CMOS process flow (continued). 1 NE 343: Microfabrication and thin film technology Instructor: Bo Cui, ECE, University…
Slide 1 Lecture 23 OUTLINE The MOSFET (cont’d) Source/drain structure CMOS fabrication process The CMOS power crisis Reading: Pierret 19.2; Hu 6.10 Optional Reading: Pierret…
MonolithIC 3D Inc. , Patents Pending MonolithIC 3D ICs RCAT Flow * MonolithIC 3D Inc. , Patents Pending MonolithIC 3D Inc. , Patents Pending Monolithic 3D ICs Using SmartCut…
MonolithIC 3D Inc. , Patents Pending MonolithIC 3D ICs RCAT Flow * MonolithIC 3D Inc. , Patents Pending MonolithIC 3D Inc. , Patents Pending Monolithic 3D ICs Using SmartCut…
UTB SOI for LER/RDF EECS Min Hee Cho Outline Introduction LER (Line Edge Roughness) RDF (Random Dopant Fluctuation) Variation Solution – UTB SOI Results Process of UTB…