Edc Manual Rose

8/6/2019 Edc Manual Rose

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DEPT. OF ELECTRONICS & COMMUNICATION

Experiment No: 1

STUDY OF CATHODE RAY OSCILLOSCOPE

AIM: To study the operation of CRO and its applications.

APPARATUS:

1. Cathode Ray Oscilloscope2. CRO Probes3. Function Generator4. Resistor, Capacitor, PN Diode, Zener Diode, Transistor.

CIRCUIT DIAGRAM:

FRONT PANNEL CONTROLS:

1. Power ON : Put the instrument to main supply with LEDindication.

2. INTENSITY : The brightness of the display.3. FOCUS : Controls the sharpness of the display.4. TIME BASE : 18 steps to enable selection of

18 Calibrated sweep from 0.5uSec/div to0.2Sec/div in 1, 2, 5 Sequence.

5. TIME BASE : In calibrated position the selectedVARIABLE Sweep speed holds indicated

Calibration clockwise, it extends theSweep sipped by 2.5times approx.with LED indication.

6. POSITION : Controls the horizontal position of the

Nalla Malla Reddy Engineering College 1


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Display. When this control is pulled itmagnifies the sweep 5 times, with LEDindication.

7. LEVEL : Variable control, selects the trigger point

On the displayed wave form.8. AUTO/NORM : In auto mode trace is displayed inabsence of any input signal. Thedisplayis then automatically triggered forsignals above 30Hz depending upon correctsetting of Trigger LEVEL control.

9. INT/EXT : INT display triggers from signalsderivedFrom any other external source fed

Though EXT TRIG BNC socket.

10. CH1/CH2 : Selects trigger signal in INT modeDerived from either CH1 or CH2 inputs.

11. 0.2V, 1 KHz : 200mV Peak to peak 1 KHzsquare waveCalibration signal.

12. POSITION : Controls the vertical position of thedNMREC - 2 - - 2 -isplay.

13. ac/dc/gnd : Selects input coupling/grounding(Grounds the amplifier input but inputSignal is open circuited.)

14. INPUT BNCCH1/Y (CH2/X) : Input terminal of CH1/Y,

CH2/X Inputs.15. TRACE : Screw driver controls to adjust

horizontaltilt of the trace.

16. CH1/CHATTENUATOR : 12 steps compensated attenuator

from 5mV/div to 20V/div in 1, 2, 5sequence.

17. AMPLIFIER

MODE SWITCHa. ALT/CHOP : Selects switching mode for the twoChannels while in DUAL operation.

b. DUAL MODE(x-y) : In DUAL operation as a DUAL traceScope in ALT or CHOP mode asSelected.

18. CT tester : Converts scope into a component19. CT tester. : input terminals for component20. SWP/X-Y : When pressed, converts CH2 input

Into X-channels and enable use ofThe scope as on x-y scope (Y input

Via CH1). In released position,SWEEP operates.



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GENERAL PROCEDURE FOR OPERATION OF CRO:

1. Keep the vertical shift and horizontal shift controls in their middle positions.

2. Keep the intensity control in its minimum.3. Now switch on the CRO wait for some time till the CR tube warms up.4. A horizontal line may appear if the intensity is sufficient? If not adjust the

intensity control, X shift control and if necessary the Y shift control to get thehorizontal line on the center of the screen.

5. If the horizontal line is not aligning with graticule i.e., line not actually horizontaladjust trace rotation control and align the line with the graticule.

6. Now adjust the focus control to get sharp line.7. Connect the output of the source through the probe to the vertical input of the

CRO.8. Adjust the vertical input attenuates to get the required amplitude of the signal.

9. The sweep can now be internal and does not require time adjustment. Adjust thesweep selector to get a single cycle or more cycles as per requirement.

DC VOLTAGE MEASUREMENT:

i. The CRO will be switched on and a horizontal line is obtained single theinternal sweep.

ii. The unknown DC voltage is applied to the vertical input terminal placingthe input switch to DC mode.

iii. On applications of the voltage the horizontal line shifts. This displacementis measured using the scale marking on the screen.

iv. The magnitude of the unknown voltage can be calculated by multiplyingthe displacement obtained with deflection factor unknownvoltage=deflection factor x displacement.i.e., = No. of divisions X volts/div.

AC VOLTAGE MEASUREMENT:

i. The CRO is switched on and the horizontal line is obtained.

ii. The unknown voltage is applied to the vertical deflecting plates.iii. Press x-y mode switch.iv. A vertical line is displayed by the CRO the length of this line is measured

using the scale marking on the screen.v. This length 1 multiplied by the deflection factor gives the peak to peak

amplitude of the applied voltage.Peak to peak voltage=No. of divisions in vertical direction X volt/div

Peak voltage Vm = Vpp



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MEASUREMENT OF FREQUENCY:

i. Switch on the CROii. Apply sine or square or triangular wave to the vertical plates from the

function generator.

iii. Measure distance between tow peaks of the wave in horizontal direction.iv. Time period of the wave T= distance X time/divv. Unknown frequency = 1/T

COMPONENT TESTING:

i. Switch on the CROii. Press the CT switch.iii. Plug in two probes one at the banana socket marked CT-IN, and the other

at ground.

iv. Connect the component under test across the probes.

MEASUREMENT OF UNKNOWN FREQUENCY:

TEST PATTERN:

Short circuit Open circuit Resistor Capacitor

Diode Transistor B/E JFET S/G Zener Diode



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Experiment No: 2

PN DIODE CHARACTERISTICS

AIM: To plot the V-I characteristics of diode (Silicon and Germanium).

To find the static resistance and dynamic resistance of the PN Diode.

EQUIPMENT REQUIRED:

1) Bread Board2) Diodes Silicon -1N4007 & Germanium 0A793) Resistors 1K, 1004) DC Voltmeters (0-1V) 1No.5) DC Voltmeters (0-20V) 1No.6) DC Ammeters (0-20mA) 1No.7) DC Ammeters (0-200A) 1No.

8) DC Power Supply.9) Connecting wires.

CIRCUIT DIAGRAM:

Fig 2.1 Forward Bias

Fig 2.2 Reverse Bias


A

V

1K

0-20V0-20V 1N4007

0-200A

A

V

1K

0-20V0-20V 1N4007

0-200A


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PROCEDURE:

1. Construct the circuit as shown in fig.2.1

2. Vary the Supply Voltage from 0V to an incremental step of voltage 0.1V andnote down the ammeter and voltmeter readings.3. Tabulate the results and Plot the V-I Characteristics.4. Repeat the steps 2 and 3 using Germanium diode.5. For reverse bias condition construct the circuit as shown in fig.2.26. Repeat the steps 2 and 3 using Silicon and Germanium diode.7.

OBSERVATION TABLE:

FORWARD BIAS:

S.No.Silicon Diode Germanium Diode

Vf(Volts) If (mA) Vf(Volts) If(mA)

REVERSE BIAS:

S.No.Silicon Diode Germanium Diode

Vr (Volts) Ir ( A) Vr (Volts) Ir ( A)

IDEAL GRAPH:



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Fig.2.3 Model Graph

CALCULATIONS FOR SILICON DIODE AND GERMANIUM DIODE:

Static resistance (rs):

rs= V1/I1

Dynamic Resistance (rd):

rd=(V2-V1) / (I2-I1)

RESULT:

Static Resistance:

Dynamic Resistance:



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Experiment No: 3

ZENER DIODE CHARACTERISTICS

AIM: To determine the V-I characteristics and Break Down Voltage of Zener diode

under reverse bias conditions. (8.2V).

APPARATUS:

1) Bread Board2) Zener Diodes 8.2V3) Resistors 1k 1Nos4) DC Voltmeters (0-20V) 1No.5) DC Ammeters (0-20mA) 1No.6) DC Power Supply7) Connecting wires

CIRCUIT DIAGRAM:

Fig.3.1

PROCEDURE:

1. Make the connections as shown in Fig 3.1

2. Vary the supply voltage from 0V to an incremental step voltage of 0.5V.3. Tabulate the results and plot the V-I characteristics under reverse biascondition.

4. Note down the readings of Voltmeter and Ammeter.5. Observe the Break Down Voltage of Zener Diode

OBSERVATION TABLE:


A

V

1K

0-20V0-20V 8.2 Vz

0-20mA


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Reverse bias:

S.No.

8.2V Zener Diode

Vr (Volts) Ir (mA)

IDEAL GRAPH:

Calculations for Silicon Diode and Germanium Diode:

Breakdown Voltage:

RESULT:



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Experiment No: 4

TRANSISTOR COMMON BASE-CONFIGURATIONCHARACTERISTICS

AIM: To obtain the input and output characteristics of a Common BaseConfiguration of a transistor.

APPARATUS:

1. Bread board2. Resistors 1K-2 No.3. Transistor BC107-1No.4. DC Voltmeter (0-1V) 1No.5. DC Voltmeter (0-20V) 1No.6. DC Ammeters (0-20mA) 1No.

7. DC Power Supply8. Connecting Wires

CIRCUIT DIAGRAM:

Fig 4.1

PROCEDURE:

Input Characteristics:

1. Make the connections as shown in Fig 4.12. First fix the VCB at 5V. Now vary supply voltage slowly and note down the

current IE for each value of VEB.3. Repeat the above steps for VCB =10V.4. Plot the graph between VEB and IE at VCB = 5V and 10V.

Output Characteristics:

1. Make the connections as as shown in Fig 4.12. First fix the IE at 5mA. Now vary supply voltage slowly and note down the

current IC for each value of VCB3. Repeat the above steps for IE =15mA.


VCB

IE

IC

1K

0-15V0-5V

0-20mA

0-1V

0-20mABC107E C

B

VEB 0-20VV

A

V

A

1K


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4. Plot the graph between VCB and IC at IE = 5mA and 15mA.

OBSERVATION TABLE:


VCB=5V VCB=10VVEB

(Volt)IE

(mA)VEB

(Volt)IE

(mA)

Output Characteristics:

IE=5mA IE=15mAVCB

(Volt)IC

(mA)VCB

(Volt)IC

(mA)

IDEAL GRAPHS:

RESULT:



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Experiment No: 5

TRANSISTOR COMMON EMITTER CHARACTERISTICS

AIM: To plot input and output characteristics of Common Emitter Configuration of

a Transistor.APPARATUS:

1. Bread board.2. BC 107 Transistor.3. Regulated power supply.4. DC Ammeter (0-20 mA) 1no, (0-200 A) 1no.5. DC Voltmeter (0-1 V) - 1 nos, (0-20 V) - 1 nos.6. Resistor 100K and 1K .

CIRCUIT DIAGRAM:

Fig 5.1

PROCEDURE:

Input characteristics:

1. Make the connections as shown in the fig 5.12. First fix the VCE at 5V, now vary VEB in step of 0.1V and note down thereadings of base current IB.

3. Repeat the above procedure by keeping VCE at 15V.

Out put characteristics:

1. Make the connections as shown in the fig 5.12. First fix the IB at 5 A, now vary VCE in step of 0.1V and note down

the readings of collector current IC.

3. Repeat the above procedure by keeping IB at 15 A.


100K

0-10V0-5V

V

0-200A

0-1V

0-200mA

VBE

0-20V

VCE

A

A

V

BC107E

CB

V

1KIc

IB


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OBSERVATION TABLE:

Output Characteristics

IB =5 A IB =15 AVce (V) IC (mA) Vce (V) IC (mA)

Input Characteristics:VCE =5V VCE =15V

VBE (V) IB ( A) VBE (V) IB ( A)

IDEAL GRAPHS

RESULT:



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Experiment No: 6

RECTIFIERS WITHOUT FILTERS

AIM: To Calculate ripple factor and efficiency of Half wave and full waverectifiers without filters.

APPARATUS:

1. Bread board2. Diodes 1N4007(2no.s)3. Digital multi meters (1no.s)4. Decade resistance box

5. CRO with probes6. Connecting wires7. Transformer

CIRCUIT DIAGRAM:

Fig: 6.1 Half Wave Rectifier

Fig: 6.2 Full Wave Rectifier


RL

V0

230 AC

Supply50Hz VM

1N4007

RL

V0

230 ACSupply50Hz

1N4007

1N4007

VM

VM


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PROCEDURE:

1. Connect the circuit as per the circuit diagram shown in fig 6.1.2. Note down the VM at the secondary winding of the transformer by

using digital multimeter and also measure the no load voltage (VNL) byremoving the load from the circuit.3. Now connect the load RL at 1k then measure the values of Idc, Vdc, Iac

and Vac.4. Take the above readings by varying the RL in steps of 1k.5. Repeat the above steps 1,2,3 and 4 for fig 6.2.6. Observe the output wave forms of rectifiers by using CRO.7. Plot the graph between RL and % Regulation

OBSERVATOIN TABLE:

Half wave rectifier:VM = -------- V(AC) VNL = ---------- V(DC)

RLVdc(V)

Idc(mA)

Vac(V)

Iac(mA

)

RL =Vdc/ Idc r=Vac/Vdc

% reg = =(Pdc/Pac)x

100

Full wave rectifier:VM = ---------- V(AC) VNL = ------- V(DC)

RLVdc(V)

Idc(mA)

Vac(V)

Iac(mA)

RL =Vdc/ Idc r=Vac/Vdc

% reg = =(Pdc/Pac)x

100


VNL Vdc

Vdc

x 100

VNL Vdc

Vdc

x 100


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OUTPUT WAVE FORMS:

GRAPH:

CALCULATIONS:

1. Ripple factor ( r ) = V1rms I1rms Vdc Idc

2. % Regulation

3. Efficiency () = (Pdc/Pac) x100

Pdc= Vdc x Idc, Pac= Vrms x Irms


VNL Vdc

Vdc

x 100=

=

RL

% Reg


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OBSERVATIONS:

S.No.Half waverectifier

Full waverectifier

1. Ripple factor ( r )

2. % Regulation

3. Efficiency ()

Result:

Experiment No: 7

RECTIFIERS WITH FILTERS

AIM: To study the various parameters of full wave rectifiers with filters.



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APPARATUS:

1. Bread board2. Diodes 1N4007(2 no.s)3. Digital multi meters (1 no.s)

4. Decade resistance box5. CRO with probes6. Transformer7. Capacitor 470F 2No.s8. Inductor 45mH 1No.9. Connecting wires

CIRCUIT DIAGRAM:

Fig 7.1 C - Filter

Fig 7.2 L Section Filter


V0

230 ACSupply50Hz

1N4007

1N4007

470F

C

D1

D2

V0

230 ACSupply50Hz

1N4007

1N4007

470F

C

D1

D2

45mH

L

470F V0

230 AC

Supply50Hz

1N4007

1N4007

470F

C

D1

D2

45mH

L


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Fig 7.3 - section Filter

PROCEDURE:

1. Connect the circuit C filter as per the circuit Diagram shown in Fig 7.1.2. Note down the Vm at the secondary Winding of the transformer by using

digital multimeter and also measure the no load voltage (VNL) by removingthe load from the circuit.

3. Now connect the load RL at 1k then measure the values of Idc, Vdc, Iac andVac.

4. Take the above readings by varying the RL in steps of 1k.5. Repeat the above steps 1, 2, 3 and 4 for L-Section and - section filter as

shown in the fig 7.2 fig 7.3 respectively.6. Observe the output wave forms of rectifiers by using CRO.7. Plot the graph between RL and % regulation.

OUTPUT WAVE FORMS:

OBSERVATOIN TABLE:

Full wave rectifier:

Vm =..V(AC), VNL =..V L-section,VNL = . V -section, VNL = . V C Filter



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FilterRL

Vdc(V)

Idc(mA)

Vac(V)

Iac(mA)

RL =Vdc/ Idc

Ripplefactor =Vac/Vdc

% Reg =(Pdc/Pac)x

100

L-Section

-section

C Filter

CALCULATIONS:

1. Ripple factor ( r ) = V1rms I1rms Vdc Idc

2. % Regulation

3. Efficiency () = (Pdc/Pac) x100

Pdc= Vdc x Idc, Pac= Vrms x Irms

GRAPH:


VNL Vdc

Vdcx 100=

=

RL

% Reg


21/48


OBSERVATIONS:

S.No.Half waverectifier

Full waverectifier

Bridgerectifier

1 Ripple factor ( r )

2. % Regulation

3. Efficiency ()

RESULT:



22/48


Experiment No: 8

FIELD EFFECT TRANSISTOR CHARACTERISTICS

AIM: To observe Field Effect Transistor characteristics (i.e. Drain andTransfer) and calculate drain resistance (rd), Tran conductance (gm)and Amplification factor ().

APPARATUS REQUIRED:

1. Bread Board.2. DC Ammeters (Digital) (0-20mA)-1No3. DC Voltmeters (Digital) (0-20V)- 2 Nos4. Field Effect Transistor - BFW11

5. Connecting wires.

CIRCUIT DIAGRAM:

Fig 8.1

PROCEDURE:1. Connect the circuit as per circuit diagram as shown in the fig 8.1.2. Keep VGS=0V, and measure Id as a function of VDS by varying the supply

voltage VDD in steps of 1V.3. Repeat step-2 with VGS= -0.5V, -1.0 V.4. Plot the drain characteristics between VDS and ID.5. Set VDS= 5V and vary VGG (I.e. input supply voltage) over it full range and

measure Id and plot the transfer characteristics.6. Evaluate rd, gm and from the graphs.


V

A

V

1K

470

VDD

0-30V0-5V

0-20V

0-20V

0-200mA

BFW11

G

D

S

VGG

Id

VDS

VGS


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IDEAL GRAPH:

OBSERVATION TABLE:

O/P Characteristics (or) Drain Characteristics:

Vgs= 0 V Vgs = -0.5 V Vgs = -1.0 VVds (v) Id (mA) Vds (v) Id (mA) Vds (v) Id (mA)

Transfer Characteristics: At constant Vds = 5V

Vgs(v)

Id (mA)

CALCULATIONS:

Drain resistance (rd) = Vds/Id at Vgs constant.

Transconductance (gm) = Id/Vgs at Vds constant

Amplification factor () = rd x gm

RESULT:



24/48


Experiment No: 9

COMMON EMITTER AMPLIFIER

AIM: To obtain the frequency response characteristics and the bandwidth of

the amplifier.

APPARATUS REQUIRED:

Bread board.Transistor BC 107Resistor 1K, 3.3k, 10k, 47k.Capacitors 100F, 10FFunction Generator.CRO with probe.Connecting wires.

CIRCUIT DIAGRAM:

Fig 9.1


47k 3.3k

1k10k100F

10F

10F

Vi

Vo

CRO

VCC

= 12V

C

E

BBC107

50mV


25/48


PROCEDURE:

1. Connect the circuit diagram as shown in fig 9.1.2. Connect the function generator in sine wave mode at the input terminals and

the CRO at the output terminals of the circuit.

3. First keep the input signal at 1 KHz (sine wave) with amplitude is equal to50mv (VI) constant throughout the experiment.4. Now vary the input signal frequency from 100 Hz to 2MHz in steps. For every

value of input frequency note the output voltage.5. Calculate the gain magnitude of the amplifier using the formula and gain in

(dB) = 20log (vo/vi).6. Plot a graph frequency versus gain (dB) of the amplifier.7. Take 3dB I.e. 3 divisions below the constant voltage gain and mark the f1 and

f2 from the graph.Calculate the bandwidth f 2-f1=BW.

OBSERVATION TABLE:

At constant Vi = 50mV

S.No. FrequencyOutputVoltage

Voltage gainAv =(vo/vi )

Gain in (dB)=20log(vo/vi)

IDEAL GRAPH:

RESULT:



26/48


Experiment No: 10

COMMON COLLECTOR AMPLIFIER

AIM: To observe the frequency response characteristics of common collectoramplifier.

APPARATUS REQUIRED:

1. Bread board.2. Transistor BC 107.3. Resistors 1k, 3.3k, 33k.4. Capacitor 10F5. CRO with probe.6. Function Generator.

7. Connecting Wires

CIRCUIT DIAGRAM:

Fig 10.1


10F

Vo

33k

1k3.3k

10F

Vi

VCC

= 12V

C

E

BBC107

50mV


27/48


PROCEDURE:

1. Connect the circuit diagram as shown in Fig 10.1.2. Set a sine wave of 50mv, amplitude at 1 KHz from signal generator on CRO.3. Connect the output of signal generator to the input of the circuit and observe

the output of the circuit across Emitter Terminal by using CRO.4. Now vary the input signal frequency from 100 Hz to 2MHz in steps. For everyvalue of input frequency note down the output voltage.

5. Observe the output of common collector amplifier (Vo) on CRO.6. Calculate the gain of the common collector amplifier Av=Vo/Vi.

TABULAR FORM:

S.No Frequency(Hz)

InputVoltage

OutputVoltage

GainAv = Vo/Vi

THEORITICAL CALCULATIONS:

1. Av = Vo / Vi

RESULT:



28/48


Experiment No: 11

SINGLE STAGE RC-COUPLED AMPLIFIER

AIM: To obtain the frequency response characteristics and the bandwidth ofthe RC Coupled amplifier.

APPARATUS REQUIRED:

1. Bread board.2. Transistor BC 107.3. Resistors 1k, 3.3k, 10k, 100k.4. Capacitor 10F, 100F5. Function Generator.6. CRO with probe.7. Connecting wires.

CIRCUIT DIAGRAM:


Vo

47k 3.3k

1k10k100F

10F

10F

Vi

VCC

= 12V

C

E

BBC107

1K

50mV


29/48


Fig 11.1

PROCEDURE:

1. Connect the circuit diagram as shown in Fig 11.1.

2. Connect the function generator in sine wave mode at the input terminals andthe CRO at the output terminals of the circuit.3. First keep the input signal at 1 KHz (sine wave) with amplitude is equal to

50mv (VI) constant throughout the experiment.4. Now vary the input signal frequency from 50 Hz to 2MHz in steps. For every

value of input frequency note the output voltage.5. Calculate the gain magnitude of the amplifier using the formula

gain in (dB) = 20log (vo/vi).6. Plot a graph frequency versus gain (dB) of the amplifier.7. Take 3dB I.e. 3 divisions below the constant voltage gain and mark the f1 and

f2 from the graph.

8. Calculate the bandwidth f2-f1=BW.

OBSERVATION TABLE:

At constant Vi=50Mv

S.no Frequency OutputVoltage

Voltage gainAv=(vo/vi )

Gain in (dB)=20log(vo/vi)

IDEAL GRAPH:

RESULT:



30/48


Experiment No: 12

FIELD EFFECT TRANSISTOR AMPLIFIER

AIM: To observe the frequency response of Field Effect Transistor amplifierand calculate gain and band width.

APPARATUS:

1. Bread Board2. Field Effect Transistor (BFW 10 (or) BFW11).3. RPS (DC 12V)4. CRO5. CRO Probes

6. Resistors 1M , 2.2 K , 1K7. Capacitors: 1 F, 10 F8. Connecting wires

CIRCUIT DIAGRAM:

Fig 12.1


10F1k

Vo

2.2k

1k

1M

1F

1F

Vi

VDD

= 12V

D

S

GBFW11

50mV


31/48


PROCEDURE:

1. Connect the Circuit Diagram as shown in the fig 12.1.2. Connect the function generator in sine wave mode at the input terminals andthe CRO at the output terminals of the circuit

3. Measure output voltage and calculate gain= Vout / Vin.4. The half power points are noted from the graphs and bandwidth is calculated.

TABULAR FORM:

S.NO FREQUENCY(Hz)OUTPUT

VOLTAGE(V)GAIN(G)=V0/VI=AV

GAIN in Db=20 log(Vo/Vi)

IDEAL GRAPH:



32/48


33/48


PROCEDURE:

1. Connect the circuit diagram as shown in fig 13.12. Observe the output at collector terminal by using CRO.

3. Calculate the frequency of oscillations from CRO practically.4. Calculate theoretical frequency of oscillations using the formula

f= 1/2RC6+4K where K = Rc/R

OBSERVATION TABLE:

IDEAL GRAPH:

F = 1/T

RESULT:


S.no Value ofresistance

Value ofcapacitance

TheoreticalFrequency( Hz)

PracticalFrequency( Hz)


34/48


Experiment No: 14

CURRENT SERIES FEEDBACK AMPLIFIER

AIM: To plot the frequency of the feedback amplifier and to measure thegain and band width.

APPARATUS:

1. Bread Board.2. Resistors 2.2K, 47K, 1K, 10K3. Capacitors 0.1F.4. Transistor BC 107.5. Regulated Power Supply.

6. CRO.7. Function Generator.8. Connecting Wires

CIRCUIT DIAGRAM:

Fig 14.1


47k 2.2k

1k10k

0.1F

Vi

Vo

VCC

= 12V

C

E

BBC107


35/48


PROCEDURE:

1. Connect the circuit as shown in fig 14.1.2. Keep the emitter resistance RE bypassed by connecting the capacitor CE

across RE from the circuit. Apply the AC signal voltage to the input of theamplifier from the signal generator. Keep the input voltage low and freq at 1KHz.

3. Now disconnect capacitor CE across RE from the circuit again measure thevoltage at the output.

4. Find the gain of the amplifier i.e. with feedback and without feedback.5. Vary the frequency of the input signal from 10Hz to 2MHz and measure the

output at each value of frequency for with feedback and without feedback bykeeping the input voltage constant.

6. Plot the frequency response curve and calculate band width for with feedbackand without feedback.

Band width:

Without feedback (f2-f1) =

With feedback (f2-f1) =

RESULT :



36/48


Experiment No: 15

VOLTAGE SERIES FEED BACK AMPLIFIER

AIM: To observe the frequency response of the voltage series feedbackamplifier

APPARATUS:

1. Bread Board.2. Function generator.3. CRO, with probe.4. Transistor BC1075. Resistors-10k,2.2k,47k6. Capacitors 0.1F.

7. Regulated Power Supply8. Connecting wires.

CIRCUIT DIAGRAM:

PROCEDURE:

1. Make the connections as per the circuit diagram.2. Set the input voltage to 50 mV at 1 KHz from Function generator.3. By varying the frequency of applied voltage using function generator

the output voltage is noted from CRO4. A graph is plotted between frequency and voltage gain


Vo

47k

2.2k10k

0.1F

Vi

VCC

= 12V

C

E

BBC107

50mV


37/48


5. The bandwidth of amplifier is calculated from the graph

OBSERVATION TABLE

S.No Vin(volts) Frequency Vo (volts) Avf=Vo/Vin

IDEAL GRAPH:

RESULT:



38/48


Experiment No: 16COLPITTS OSCILLATOR

AIM: To calculate the frequency of colpitts oscillator theoretically as well as

practically.

APPARATUS:

Bread board.Resistors 3.3K, 100K, 2.2K, 220,10k.Capacitor 10F, 100F, 0.001F, 0.1F.Transistor BC 107Decade Inductance Box.CRO with probes.Regulated Power Supply

Connecting Wires

CIRCUIT DIAGRAM

Fig 16.1


2.2K 10F

100K3.3K

10F

10K 220K 100F0.1F

Vcc =12V

VoBC107

E

BC

0.001F

100H - 900H


39/48


PROCEDURE:

1. Connect the circuit as shown in the fig 16.1.Connect the CRO at output terminals.

Observe and record the frequency of Oscillations of CRO.Calculate the frequency of oscillations practically.Calculate the frequency of oscillations theoretically by using the formula

f= 1/(2II(LCT)) where L =200H, 300H, 500H.CT = C1C2/C1+C2

OBSERVATION TABLE:

S.No C 1 C 2 CT=C1C2/C1+C2 L f=1/(2II(LCT))

200H 300H 500H

1

2

3

IDEAL GRAPH:

F = 1/T

RESULT:



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Experiment No: 17

HARTLEY OSCILLATOR

AIM: To calculate the frequency of Hartley oscillator theoretically as well aspractically.

APPARATUS:

Bread board.Transistor BC 107Resistor 3.3K, 100K, 2.2K, 220, 10KDecade Capacitance Box - 10F, 1F.Inductor 5mH, 9mH, 50mH, 500mH.CRO with probes.

Regulated Power SupplyConnecting wires

CIRCUIT DIAGRAM:

Fig 17.1


2.2K 10F

100K3.3K

10F

10K 220K 100F

L1

L1

Vcc =12V

Vo

BC107

E

BC


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PROCEDURE:

1. Connect the circuit as shown 17.1.2. Now switch ON the Power supply.3. Observe and record the frequency of Oscillations of CRO.

4. Calculate the frequency of oscillations practically F = 1/T.5. Calculate the frequency of oscillations theoreticallyby using the formula f= 1/ (2II(C LT))

Where LT = L1+L2 and L1=5mH, L2=9mH.

OBSERVATION TABLE:

S.No. L1 L2 C LT fT=1/2C LT1F 10F

IDEAL GRAPH:

RESULT:



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Experiment No: 18

WIEN BRIDGE OSCILLATOR

AIM: To study and calculate the frequency of operation of wein bridge oscillator.

APPARATUS:

1. Two stage RC Coupled amplifier trainer kit.2. C.R.O with probe.3. DRB-2no4. DCB-2no.5. Patch cards.

CIRCUIT DIAGRAM:

Fig 18.1

PROCEDURE:

1. Connect the circuit diagram as shown in 18.1.2. Vary the R1, R2, C1 and C2 Values and calculate the theoretical values of the

frequency using the formulafr = 1/(2 R1R2C1C2)3. Repeat step 2 for different values of R1 & R2 ,C1 & C2 are note down the

frequencies.4. At the same time calculate frequency practically from CRO.

OBSERVATION TABLE:



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R1 R2 C1 C2 fr = 1/(2 R1R2C1C2) F= 1/T (on CRO)

IDEAL WAVE FORM:

RESULT:

Experiment No: 19



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SILICON CONTROLLED RECTIFIER

AIM: To Calculate the Latching and Holding Current for a given SCR.

APPARATUS:

1. Bread Board2. Resistor 1k 2 nos3. Ammeter 0-20mA 2 nos4. Voltmeter 0-20 V 1 nos5. Silicon Controlled Rectifier6. Regulated Power Supply

CIRCUIT DIAGRAM:

Fig 19.1

PROCEDURE:

1. Connect the circuit as per the circuit diagram 19.1.2. Set gate current Ic equal to fixing current and vary node to Cathode voltage

VAK in steps of 0.5 V and note down the corresponding Anode current IA.3. VBE is the point where VAK suddenly drops and there is a sudden increase incurrent IA.

4. Note down the current at that point referred as Latching Current.5. Increase VAK in steps till its maximum.6. Open the gate terminal and decrease the VAK.7. Holding Current is the current below which the deflection in both the

Voltmeter and Ammeter suddenly reaches to 0.


0-20V

A

V

1K

0-20V

0-20mAA

1K0-20mA

0-20V

0-20V

A

K


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TABULAR COLUMN:

VAK (volts) IA (mA)

EXPECTED GRAPHS:

OBSERVATIONS:

IG =

IA =

VAK =

IH =

RESULT:

Experiment No: 20


IC

IA

VAK

(volts)

IA

(mA)


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COMMON BASE TRANSISTOR STATIC CHARACTERISTICS

AIM: To obtain the input and output static characteristics of a CB transistorConfiguration.

APPARATUS:

1. Bread boards2. Resistors 220 - 1 No. and 1k - 1 No3. Transistor BC107A-1No.4. DC Voltmeter - (0-2V) - 1No.5. DC Voltmeter - (0-20V) - 1No.6. DC Ammeter - (0-200mA) - 2No.s7. DC Power supply (0-30V/1A) - 1No.8. Connecting wires

CIRCUIT DIAGRAM:

PROCEDURE:

Input characteristics:

1. Make the connections as per the circuit diagram2. Measure VEB and IB under open circuit at output side.3. Measure VEB and IB under short circuit at output side.4. First open the circuit the VCB.Now vary slowly VEB and note down the current

IE5. Repeat for VCB at 0V,-1V, -10V, -15V.

Output characteristics:

1. Make the connections as per the circuit diagram2. First fix the IE at 1mA. Now vary the VCB in steps note the current IC for each

step.3. Repeat for IE at 2mA and 3mA.

OBSERVATION TABLE:



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VCB = Open VCB = Short VCB = -1V VCB = -10V VCB = -15VVEB(V)

IE(mA)

VEB(V)

IE(mA)

VEB(V)

IE(mA)

VEB(V)

IE(mA)

VEB(V)

IE(mA)

0

0.1

0.2

0.4

0.6

0.8

1.0

2.0

Output characteristics:

IE = 0mA IE = 10mA IE = 20mA IE = 30mA IE = 40mAVCB

(V)

IC

(mA)

VCB

(V)

IC

(mA)

VCB

(V)

IC

(mA)

VCB

(V)

IC

(mA)

VCB

(V)

IC

(mA)0.25

0

-2

-4

-6

-8

-10

GRAPH:

1. Draw the curve for input characteristics for CB configuration VEB (V) Vs IE(mA) keeping VCB (Open), VCB = 0 (Short), VCB = -1V, -10V and -20Vrepeating.

2. Draw the curve for output characteristics for CB configuration VCB (V) Vs IC(mA) keeping IE = 0 (Short), 10mA, 20mA, 30mA and 40mA repeating.



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DISCUSSION:

1. Explain the input and output static characteristics of a common base transistorconfiguration.

2. Explain the early effect.

3. Discuss the active, saturation and cutoff regions of the above4 characteristics.

RESULT:

Edc Manual Rose

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