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Mathematical Modeling of a Hall Héroult Aluminum Reduction Cell Stefan Winkel Jessen A Thesis Submitted in Partial Fulfillment of the Requirements for the Degree of Master…

Documents June 11, 2014 [email protected] sawyes/courses.html 1 ECSE-6230 Semiconductor Devices and Models I...

Slide 1June 11, 2014 [email protected] www.rpi.edu/~sawyes/courses.html 1 ECSE-6230 Semiconductor Devices and Models I Lecture 14 Prof. Shayla Sawyer Bldg. CII, Rooms 8225 Rensselaer…

Documents 6.5.8 Equivalent circuit for the MOSFET. Capacitance The gate capacitance C i is the sum of the...

Slide 1 6.5.8 Equivalent circuit for the MOSFET Slide 2 Capacitance The gate capacitance C i is the sum of the distributed capacitance from the gate to the source end of…

Documents 6.5.8 Equivalent circuit for the MOSFET

6.5.8 Equivalent circuit for the MOSFET Capacitance The gate capacitance Ci is the sum of the distributed capacitance from the gate to the source end of the channel (CGS)…