Slide 1Evolution and Prospect of Single-Photon Avalanche Diodes and Quenching Circuits Politecnico di Milano, Dip. Elettronica e Informazione, Milano, Italy S. Cova, M. Ghioni,…
Slide 1Laboratory for Sub-100nm Design Department of Electrical and Computer Engineering Novel dual-V th independent-gate FinFET circuits Masoud Rostami and Kartik Mohanram…
Slide 1indDG: A New Model for Independent Double-Gate MOSFET Santanu Mahapatra Nano-Scale Device Research Lab Indian Institute of Science Bangalore Email: [email protected]…
PowerPoint Presentation Calculation of Charge Centroid in FETs For small fin thickness (DG-like structures) or channel diameter (CG-like structures), thereâs notable structural…
Slide 1 SiNANO Workshop Carrier mobility enhancement in strained silicon germanium channels David Leadley University of Warwick Slide 2 Collaborators Warwick Tim Grasby,…
Slide 1 1 SOI BiCMOS an Emerging Mixed-Signal Technology Platform Tak H. Ning Slide 2 2 Outline Evolution of Silicon Technology CMOS for Mixed Signal -- Why and Why Not?…
Slide 1 1 Scalable E-mode N-polar GaN MISFET devices and process with self-aligned source/drain regrowth Uttam Singisetti*, Man Hoi Wong, Sansaptak Dasgupta, Nidhi, Brian…
Hetero-structure FETs: Modeling, Characterization and Analysis Introduction Mehdi Anwar University of Connecticut Material Properties: Heterojunction Material/Device Fundamentals…
Slide 1 IEEE Central NC EDS/MTT/SSC Society Friday, Nov. 5th, 2010 The Nanoscale MOSFET: Physics and Limits Mark Lundstrom 1 Electrical and Computer Engineering and Network…