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What is a 3D IC? Could be Heterogeneous Stacked 2D (Conventional) ICs Motivation Interconnect structures increasingly consume more of the power and delay budgets in modern…

Technology Open, De Jure, De Facto and Proprietary: Standards and Microsoft

1. Open, De Jure, De Facto And Proprietary:Standards and Microsoft Chris Wilson Group Program Manager Internet Explorer Platform and Security Microsoft Corporation NGW028…

Documents Présentation PowerPoint

1. Memory Applications:Packaging & Integration Trends – 2009 Report – How 3-D integration will challenge and reshape the memory industry Infineon Nokia © 2009Copyrights…

Technology Think3 Industrial Design

1. THINKDESIGN PROFESSIONAL The product definition process completely covered The ThinkDesign Professional solution covers the entire product definition cycle, meeting the…

Technology Think3 Industrial Design

1. THINKDESIGN PROFESSIONAL The product definition process completely covered The ThinkDesign Professional solution covers the entire product definition cycle, meeting the…

Technology Finalyser - the Plug-In and ExtendScripts Collection for Adobe FrameMaker and more...

1. Session 1: FinalyserPlug-In and ExtendScripts collectionPage 103.07.2012Georg Eck CEO, Adobe Certified Expert, WebWorks University Coach | Adobe | WebWorks | SAP Visual…

Documents NASA World Wind Contribution to GEOSS Client Applications Session Nadine Alameh, Ph.D. MobiLaps LLC....

Slide 1NASA World Wind Contribution to GEOSS Client Applications Session Nadine Alameh, Ph.D. MobiLaps LLC September 26th, 2008 Slide 2 Objectives Increase usability of growing…

Documents ITRS Winter Conference 2007 Kamakura, Japan 1 International Technology Roadmap for Semiconductors...

Slide 1ITRS Winter Conference 2007 Kamakura, Japan 1 International Technology Roadmap for Semiconductors Assembly and Packaging 2007 Slide 2 ITRS Winter Conference 2007 Kamakura,…

Documents Adrian Ionescu Nanolab, EPFL Switzerland 1. Prove that energy efficient nanolectronics is a must for...

Slide 1Adrian Ionescu Nanolab, EPFL Switzerland 1 Slide 2 Prove that energy efficient nanolectronics is a must for the future… … and NEMS is a potential key enabling…

Documents Formation of Sub-10 nm width InGaAs finFETs of 200 nm Height by Atomic Layer Epitaxy *D. Cohen-Elias...

Slide 1Formation of Sub-10 nm width InGaAs finFETs of 200 nm Height by Atomic Layer Epitaxy *D. Cohen-Elias 1, J.J.M. Law 1, H.W. Chiang 1, A. Sivananthan 1, C. Zhang 1,…