TVS Diode Array (SPA reg Diodes)Low Capacitance ESD and Surge Protection - SP1255P Series
copy 2019 Littelfuse IncSpecifications are subject to change without notice
Revised 090619
Description
Applications
The SP1255P integrates three channels of ultra-low capacitance steering diodes and a low voltage TVS diode to provide maximum protection of the USB data and ID pins against ESD per the IEC 61000-4-2 standard An additional 12V TVS diode is included to provide lightning surge protection for the USB VBUS pin up to 100A (tP=820μs) per the IEC 61000-4-5 standard The SP1255P provides superior protection for current intensive applications such as fast charging peripharals
The SP1255P comes in a space saving 20x18mm μDFN package with a typical height of 055mm making it an ideal solution for smart phones tablets and other portable electronics
Features
bull RoHS compliant and lead-free
bull AEC-101 qualified
For USB Voltage Bus Pin (VBUS)
bull ESD IEC 61000-4-2 plusmn30kV contact plusmn30kV air
bull EFT IEC 61000-4-4 80A (tP=550ns)
bull Lightning IEC 61000-4-5 100A (tP=820μs)
bull Protection for VBUS operating up to 12V
bull Benchmark setting protection
bull High current handling capability for fast charging applications
bull USB 20
bull USB OTG
bull μUSB
bull Protection for the VBUS circuit on USB20 Fast Charging
Pinout
Functional Block Diagram
PIN 2 (D+)PIN 3 (D-)PIN 4 (ID)
PIN 1(V )BUS
PIN 56 (GND)
Life Support Note
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated
SP1255P Series 05pF 12kV Diode Array for μUSB RoHS Pb GREEN
For USB Data Pin (D+ D- ID)
bull ESD IEC 61000-4-2 plusmn12kV contact plusmn15kV air
bull EFT IEC 61000-4-4 40A (tP=550ns)
bull Lightning IEC 61000-4-5 2nd edition 4A (tP=820μs)
bull 05pF capacitance
bull Low clamping voltage and dynamic resistance (03Ω)
Bottom View
Additional Information
Datasheet SamplesResources
TVS Diode Array (SPA reg Diodes)Low Capacitance ESD and Surge Protection - SP1255P Series
copy 2019 Littelfuse IncSpecifications are subject to change without notice
Revised 090619
SP
301
2
CAUTION Stresses above those listed in ldquoAbsolute Maximum Ratingsrdquo may cause permanent damage to the device This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied
Absolute Maximum Ratings
Symbol Parameter Value Units
IPP (Pin 1) Peak Current (tp=820μs) 100 A
IPP (Pin 2-4) Peak Current (tp=820μs) 4 A
TOP Operating Temperature -40 to 125 degC
TSTOR Storage Temperature -55 to 150 degC
Electrical Characteristics (TOP=25ordmC)
Parameter Symbol Test Conditions Min Typ Max Units
USB VBUS (Pin 1)
Reverse Standoff Voltage VRWM Pin 1 to GND 12 V
Reverse Breakdown Voltage VBR IT=1mA Pin 1 to GND 130 135 165 V
Reverse Leakage Current ILEAK VR=12V Pin 1 to GND 01 microA
Forward Voltage VF IF=10mA GND to Pin 1 06 07 10 V
Clamp Voltage1 VC
IPP=30A tp=820micros Fwd 165 18 V
IPP=100A tp=820micros Fwd 195 25 V
ESD Withstand Voltage1 VESD
IEC 61000-4-2 (Contact) plusmn30 kV
IEC 61000-4-2 (Air) plusmn30 kV
Diode Capacitance1 CD Reverse Bias=0V f=1MHz 1300 2500 pF
USB D+ D- ID (Pin 2 3 4)
Reverse Standoff Voltage VRWM Pin 2 3 and 4 to GND 4 V
Reverse Breakdown Voltage VBR IT=2microA Pin 2 3 and 4 to GND 45 60 75 V
Reverse Leakage Current ILEAK
VR=2V Pin 2 3 and 4 to GND 002microA
VR=4V Pin 2 3 and 4 to GND 01
Clamp Voltage1 VC
IPP=1A tp=820micros Fwd 66 80 V
IPP=2A tp=820micros Fwd 70 85 V
Dynamic Resistance RDYN TLP tP=100ns Pin 2 3 and 4 to GND2 03 Ω
ESD Withstand Voltage1 VESD
IEC 61000-4-2 (Contact) plusmn12 kV
IEC 61000-4-2 (Air) plusmn15 kV
Diode Capacitance1 CIO-GND Reverse Bias=0V f=1MHz 05 06 pF
Note 1 Parameter is guaranteed by design andor device characterization 2 Transmission Line Pulse (TLP) Test Setting tP=100ns tr=02ns ITLP and VTLP averaging window star t1=70ns to t2=90ns
0
100
200
300
400
500
600
700
800
900
1000
1100
0 1 2 3 4 5 6 7 8 9 10 11 12
Capa
citan
ce (
pF)
Bias Voltage (V)
Capacitance vs Reverse Bias (Pin1 to GND) Capacitance vs Reverse Bias (Pin2 3 4 to GND)
0
02
04
06
08
1
0 05 1 15 2 25 3 35 4
Capa
citan
ce (p
F)
Bias Voltage (V)
TVS Diode Array (SPA reg Diodes)Low Capacitance ESD and Surge Protection - SP1255P Series
copy 2019 Littelfuse IncSpecifications are subject to change without notice
Revised 090619
00
40
80
120
160
200
240
280
00 200 400 600 800 1000
Cla
mp
Vo
ltag
e (V
C)
Peak Pulse Current - IPP (A)
Clamping Voltage vs Peak Pulse Current (Pin1 to GND)
Cla
mp
Vo
ltag
e (V
C)
Peak Pulse Current - IPP (A)
00
20
40
60
80
100
120
10 20 30 40 50
Clamping Voltage vs Peak Pulse Current (Pin2 3 4 to GND)
1
10
100
01 1 10 100 1000
Pe
ak
Pu
lse
Po
wer
-P
pp
(W)
Pulse Duration - tp( micros)
1000
Non-Repetitive Peak Pulse Power vs Pulse Duration (Pin2 3 4 to GND)
01
1
10
100
01 1 10 100 1000
Pe
ak
Pu
lse
Pow
er -P
pp
(kW
)
Pulse Duration tp(micros)
Non-Repetitive Peak Pulse Power vs Pulse Duration (Pin1 to GND)
TLP
Curr
ent (
A)
TLP Volts (V)
0
2
4
6
8
10
12
14
16
0 2 4 6 8 10 12
Positive Transmission Line Pulsing (TLP) Plot (Pin 2 3 4 to GND )
TLP C
urre
nt (A
)
TLP Volts (V)
-16
-14
-12
-10
-8
-6
-4
-2
0
-6 -5 -4 -3 -2 -1 0
Negative Transmission Line Pulsing (TLP) Plot (Pin 2 3 4 to GND )
TVS Diode Array (SPA reg Diodes)Low Capacitance ESD and Surge Protection - SP1255P Series
copy 2019 Littelfuse IncSpecifications are subject to change without notice
Revised 090619
Time
Tem
pera
ture
TP
TL
TS(max)
TS(min)
25
tP
tL
tS
time to peak temperature
PreheatPreheat
Ramp-upRamp-up
Ramp-downRamp-do
Critical ZoneTL to TPCritical ZoneTL to TP
Reflow Condition Pb ndash Free assembly
Pre Heat
- Temperature Min (Ts(min)) 150degC
- Temperature Max (Ts(max)) 200degC
- Time (min to max) (ts) 60 ndash 180 secs
Average ramp up rate (Liquidus) Temp (TL) to peak 3degCsecond max
TS(max) to TL - Ramp-up Rate 3degCsecond max
Reflow- Temperature (TL) (Liquidus) 217degC
- Temperature (tL) 60 ndash 150 seconds
Peak Temperature (TP) 260+0-5 degC
Time within 5degC of actual peak Temperature (tp) 20 ndash 40 seconds
Ramp-down Rate 6degCsecond max
Time 25degC to peak Temperature (TP) 8 minutes Max
Do not exceed 260degC
Soldering Parameters
Product Characteristics
Lead Plating Pre-Plated Frame
Lead Material Copper Alloy
Lead Coplanarity 00004 inches (0102mm)
Substrate material Silicon
Body Material Molded Epoxy
Flammability UL 94 V-0
Notes 1 All dimensions are in millimeters2 Dimensions include solder plating3 Dimensions are exclusive of mold flash amp metal burr4 Blo is facing up for mold and facing down for trimform ie reverse trimform5 Package surface matte finish VDI 11-13
Part Numbering System
Part Marking System
SP 1255P U T G
SeriesPackage
U=microDFN-6
T= Tape amp Reel
G= GreenTVS Diode Arrays(SPA Diodes)reg
A G 3Product Series
= SP1255PNumber of ChannelsA
Assembly Site
Ordering Information
Part Number Package Marking Min Order Qty Packaging Option P0P1 Packaging Specification
SP1255PUTG microDFN-6 G3 3000 Tape amp Reel ndash 8mm tape7rdquo reel 2mm4mm EIA RS-481A
TVS Diode Array (SPA reg Diodes)Low Capacitance ESD and Surge Protection - SP1255P Series
copy 2019 Littelfuse IncSpecifications are subject to change without notice
Revised 090619
Package Dimensions mdash microDFN-6 (18x20x055mm)
microDFN6 (18x20x055mm)
JEDEC MO-229
SymbolMillimeters Inches
Min Nom Max Min Nom Max
A 050 055 060 0020 0022 0024
A1 000 - 005 0000 - 0002
A3 015 Ref 0006 Ref
D 175 180 185 0069 0071 0073
E 195 200 205 0077 0079 0081
b 015 020 025 0006 0008 0010
L 020 030 040 0008 0012 0016
D2 035 045 055 0014 0018 0022
E2 074 084 094 0029 0033 0037
e 040 BSC 0016 BSC
e1 080 BSC 0031 BSC
B 080 BSC 0031 BSC
C 035 045 055 0014 0018 0022
F 081 084 087 0032 0033 0034
G 082 085 088 0032 0033 0034
J 024 025 026 0010 0010 0010
N 047 048 049 0018 0019 0020
P 024 025 026 0010 0010 0010
X 023 024 025 0009 0009 0009
Y 035 036 037 0014 0014 0014
Z 062 064 066 0024 0025 0026
Top View
Bottom View
Side View
Recommended Soldering Footprint
G
F
YP
B
C N J
X Z
Notes1 Dimension and tolerancing comform to ASME Y145M-19942 Controlling dimensions Millimeter Converted Inch dimensions are not necessarily exact
Embossed Carrier Tape amp Reel Specification mdash microDFN-6
Symbol Millimeters
A0 195 +- 005
B0 230 +- 005
D0 150 + 010
D1 Oslash 060 + 005
E 175 +- 010
F 350 +- 005
K0 075 +- 005
P0 200 +- 005
P1 400 +- 010
P2 400 +- 010
T 025 +- 002
W 800 + 030 - 010
P0 D0E
F
P1
P2
D1
W
T
B0K0
A0
5
5
221
2oslash1
322
oslash179
90
oslash155
37
oslash70
55oslash1
557
oslash58
11
243
2
146
111
904
Pin1 Location
Disclaimer Notice - Information furnished is believed to be accurate and reliable However users should independently evaluate the suitability of and test each product selected for their own applications Littelfuse products are not designed for and may not be used in all applications Read complete Disclaimer Notice at httpwwwlittelfusecomdisclaimer-electronics
TVS Diode Array (SPA reg Diodes)Low Capacitance ESD and Surge Protection - SP1255P Series
copy 2019 Littelfuse IncSpecifications are subject to change without notice
Revised 090619
SP
301
2
CAUTION Stresses above those listed in ldquoAbsolute Maximum Ratingsrdquo may cause permanent damage to the device This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied
Absolute Maximum Ratings
Symbol Parameter Value Units
IPP (Pin 1) Peak Current (tp=820μs) 100 A
IPP (Pin 2-4) Peak Current (tp=820μs) 4 A
TOP Operating Temperature -40 to 125 degC
TSTOR Storage Temperature -55 to 150 degC
Electrical Characteristics (TOP=25ordmC)
Parameter Symbol Test Conditions Min Typ Max Units
USB VBUS (Pin 1)
Reverse Standoff Voltage VRWM Pin 1 to GND 12 V
Reverse Breakdown Voltage VBR IT=1mA Pin 1 to GND 130 135 165 V
Reverse Leakage Current ILEAK VR=12V Pin 1 to GND 01 microA
Forward Voltage VF IF=10mA GND to Pin 1 06 07 10 V
Clamp Voltage1 VC
IPP=30A tp=820micros Fwd 165 18 V
IPP=100A tp=820micros Fwd 195 25 V
ESD Withstand Voltage1 VESD
IEC 61000-4-2 (Contact) plusmn30 kV
IEC 61000-4-2 (Air) plusmn30 kV
Diode Capacitance1 CD Reverse Bias=0V f=1MHz 1300 2500 pF
USB D+ D- ID (Pin 2 3 4)
Reverse Standoff Voltage VRWM Pin 2 3 and 4 to GND 4 V
Reverse Breakdown Voltage VBR IT=2microA Pin 2 3 and 4 to GND 45 60 75 V
Reverse Leakage Current ILEAK
VR=2V Pin 2 3 and 4 to GND 002microA
VR=4V Pin 2 3 and 4 to GND 01
Clamp Voltage1 VC
IPP=1A tp=820micros Fwd 66 80 V
IPP=2A tp=820micros Fwd 70 85 V
Dynamic Resistance RDYN TLP tP=100ns Pin 2 3 and 4 to GND2 03 Ω
ESD Withstand Voltage1 VESD
IEC 61000-4-2 (Contact) plusmn12 kV
IEC 61000-4-2 (Air) plusmn15 kV
Diode Capacitance1 CIO-GND Reverse Bias=0V f=1MHz 05 06 pF
Note 1 Parameter is guaranteed by design andor device characterization 2 Transmission Line Pulse (TLP) Test Setting tP=100ns tr=02ns ITLP and VTLP averaging window star t1=70ns to t2=90ns
0
100
200
300
400
500
600
700
800
900
1000
1100
0 1 2 3 4 5 6 7 8 9 10 11 12
Capa
citan
ce (
pF)
Bias Voltage (V)
Capacitance vs Reverse Bias (Pin1 to GND) Capacitance vs Reverse Bias (Pin2 3 4 to GND)
0
02
04
06
08
1
0 05 1 15 2 25 3 35 4
Capa
citan
ce (p
F)
Bias Voltage (V)
TVS Diode Array (SPA reg Diodes)Low Capacitance ESD and Surge Protection - SP1255P Series
copy 2019 Littelfuse IncSpecifications are subject to change without notice
Revised 090619
00
40
80
120
160
200
240
280
00 200 400 600 800 1000
Cla
mp
Vo
ltag
e (V
C)
Peak Pulse Current - IPP (A)
Clamping Voltage vs Peak Pulse Current (Pin1 to GND)
Cla
mp
Vo
ltag
e (V
C)
Peak Pulse Current - IPP (A)
00
20
40
60
80
100
120
10 20 30 40 50
Clamping Voltage vs Peak Pulse Current (Pin2 3 4 to GND)
1
10
100
01 1 10 100 1000
Pe
ak
Pu
lse
Po
wer
-P
pp
(W)
Pulse Duration - tp( micros)
1000
Non-Repetitive Peak Pulse Power vs Pulse Duration (Pin2 3 4 to GND)
01
1
10
100
01 1 10 100 1000
Pe
ak
Pu
lse
Pow
er -P
pp
(kW
)
Pulse Duration tp(micros)
Non-Repetitive Peak Pulse Power vs Pulse Duration (Pin1 to GND)
TLP
Curr
ent (
A)
TLP Volts (V)
0
2
4
6
8
10
12
14
16
0 2 4 6 8 10 12
Positive Transmission Line Pulsing (TLP) Plot (Pin 2 3 4 to GND )
TLP C
urre
nt (A
)
TLP Volts (V)
-16
-14
-12
-10
-8
-6
-4
-2
0
-6 -5 -4 -3 -2 -1 0
Negative Transmission Line Pulsing (TLP) Plot (Pin 2 3 4 to GND )
TVS Diode Array (SPA reg Diodes)Low Capacitance ESD and Surge Protection - SP1255P Series
copy 2019 Littelfuse IncSpecifications are subject to change without notice
Revised 090619
Time
Tem
pera
ture
TP
TL
TS(max)
TS(min)
25
tP
tL
tS
time to peak temperature
PreheatPreheat
Ramp-upRamp-up
Ramp-downRamp-do
Critical ZoneTL to TPCritical ZoneTL to TP
Reflow Condition Pb ndash Free assembly
Pre Heat
- Temperature Min (Ts(min)) 150degC
- Temperature Max (Ts(max)) 200degC
- Time (min to max) (ts) 60 ndash 180 secs
Average ramp up rate (Liquidus) Temp (TL) to peak 3degCsecond max
TS(max) to TL - Ramp-up Rate 3degCsecond max
Reflow- Temperature (TL) (Liquidus) 217degC
- Temperature (tL) 60 ndash 150 seconds
Peak Temperature (TP) 260+0-5 degC
Time within 5degC of actual peak Temperature (tp) 20 ndash 40 seconds
Ramp-down Rate 6degCsecond max
Time 25degC to peak Temperature (TP) 8 minutes Max
Do not exceed 260degC
Soldering Parameters
Product Characteristics
Lead Plating Pre-Plated Frame
Lead Material Copper Alloy
Lead Coplanarity 00004 inches (0102mm)
Substrate material Silicon
Body Material Molded Epoxy
Flammability UL 94 V-0
Notes 1 All dimensions are in millimeters2 Dimensions include solder plating3 Dimensions are exclusive of mold flash amp metal burr4 Blo is facing up for mold and facing down for trimform ie reverse trimform5 Package surface matte finish VDI 11-13
Part Numbering System
Part Marking System
SP 1255P U T G
SeriesPackage
U=microDFN-6
T= Tape amp Reel
G= GreenTVS Diode Arrays(SPA Diodes)reg
A G 3Product Series
= SP1255PNumber of ChannelsA
Assembly Site
Ordering Information
Part Number Package Marking Min Order Qty Packaging Option P0P1 Packaging Specification
SP1255PUTG microDFN-6 G3 3000 Tape amp Reel ndash 8mm tape7rdquo reel 2mm4mm EIA RS-481A
TVS Diode Array (SPA reg Diodes)Low Capacitance ESD and Surge Protection - SP1255P Series
copy 2019 Littelfuse IncSpecifications are subject to change without notice
Revised 090619
Package Dimensions mdash microDFN-6 (18x20x055mm)
microDFN6 (18x20x055mm)
JEDEC MO-229
SymbolMillimeters Inches
Min Nom Max Min Nom Max
A 050 055 060 0020 0022 0024
A1 000 - 005 0000 - 0002
A3 015 Ref 0006 Ref
D 175 180 185 0069 0071 0073
E 195 200 205 0077 0079 0081
b 015 020 025 0006 0008 0010
L 020 030 040 0008 0012 0016
D2 035 045 055 0014 0018 0022
E2 074 084 094 0029 0033 0037
e 040 BSC 0016 BSC
e1 080 BSC 0031 BSC
B 080 BSC 0031 BSC
C 035 045 055 0014 0018 0022
F 081 084 087 0032 0033 0034
G 082 085 088 0032 0033 0034
J 024 025 026 0010 0010 0010
N 047 048 049 0018 0019 0020
P 024 025 026 0010 0010 0010
X 023 024 025 0009 0009 0009
Y 035 036 037 0014 0014 0014
Z 062 064 066 0024 0025 0026
Top View
Bottom View
Side View
Recommended Soldering Footprint
G
F
YP
B
C N J
X Z
Notes1 Dimension and tolerancing comform to ASME Y145M-19942 Controlling dimensions Millimeter Converted Inch dimensions are not necessarily exact
Embossed Carrier Tape amp Reel Specification mdash microDFN-6
Symbol Millimeters
A0 195 +- 005
B0 230 +- 005
D0 150 + 010
D1 Oslash 060 + 005
E 175 +- 010
F 350 +- 005
K0 075 +- 005
P0 200 +- 005
P1 400 +- 010
P2 400 +- 010
T 025 +- 002
W 800 + 030 - 010
P0 D0E
F
P1
P2
D1
W
T
B0K0
A0
5
5
221
2oslash1
322
oslash179
90
oslash155
37
oslash70
55oslash1
557
oslash58
11
243
2
146
111
904
Pin1 Location
Disclaimer Notice - Information furnished is believed to be accurate and reliable However users should independently evaluate the suitability of and test each product selected for their own applications Littelfuse products are not designed for and may not be used in all applications Read complete Disclaimer Notice at httpwwwlittelfusecomdisclaimer-electronics
TVS Diode Array (SPA reg Diodes)Low Capacitance ESD and Surge Protection - SP1255P Series
copy 2019 Littelfuse IncSpecifications are subject to change without notice
Revised 090619
00
40
80
120
160
200
240
280
00 200 400 600 800 1000
Cla
mp
Vo
ltag
e (V
C)
Peak Pulse Current - IPP (A)
Clamping Voltage vs Peak Pulse Current (Pin1 to GND)
Cla
mp
Vo
ltag
e (V
C)
Peak Pulse Current - IPP (A)
00
20
40
60
80
100
120
10 20 30 40 50
Clamping Voltage vs Peak Pulse Current (Pin2 3 4 to GND)
1
10
100
01 1 10 100 1000
Pe
ak
Pu
lse
Po
wer
-P
pp
(W)
Pulse Duration - tp( micros)
1000
Non-Repetitive Peak Pulse Power vs Pulse Duration (Pin2 3 4 to GND)
01
1
10
100
01 1 10 100 1000
Pe
ak
Pu
lse
Pow
er -P
pp
(kW
)
Pulse Duration tp(micros)
Non-Repetitive Peak Pulse Power vs Pulse Duration (Pin1 to GND)
TLP
Curr
ent (
A)
TLP Volts (V)
0
2
4
6
8
10
12
14
16
0 2 4 6 8 10 12
Positive Transmission Line Pulsing (TLP) Plot (Pin 2 3 4 to GND )
TLP C
urre
nt (A
)
TLP Volts (V)
-16
-14
-12
-10
-8
-6
-4
-2
0
-6 -5 -4 -3 -2 -1 0
Negative Transmission Line Pulsing (TLP) Plot (Pin 2 3 4 to GND )
TVS Diode Array (SPA reg Diodes)Low Capacitance ESD and Surge Protection - SP1255P Series
copy 2019 Littelfuse IncSpecifications are subject to change without notice
Revised 090619
Time
Tem
pera
ture
TP
TL
TS(max)
TS(min)
25
tP
tL
tS
time to peak temperature
PreheatPreheat
Ramp-upRamp-up
Ramp-downRamp-do
Critical ZoneTL to TPCritical ZoneTL to TP
Reflow Condition Pb ndash Free assembly
Pre Heat
- Temperature Min (Ts(min)) 150degC
- Temperature Max (Ts(max)) 200degC
- Time (min to max) (ts) 60 ndash 180 secs
Average ramp up rate (Liquidus) Temp (TL) to peak 3degCsecond max
TS(max) to TL - Ramp-up Rate 3degCsecond max
Reflow- Temperature (TL) (Liquidus) 217degC
- Temperature (tL) 60 ndash 150 seconds
Peak Temperature (TP) 260+0-5 degC
Time within 5degC of actual peak Temperature (tp) 20 ndash 40 seconds
Ramp-down Rate 6degCsecond max
Time 25degC to peak Temperature (TP) 8 minutes Max
Do not exceed 260degC
Soldering Parameters
Product Characteristics
Lead Plating Pre-Plated Frame
Lead Material Copper Alloy
Lead Coplanarity 00004 inches (0102mm)
Substrate material Silicon
Body Material Molded Epoxy
Flammability UL 94 V-0
Notes 1 All dimensions are in millimeters2 Dimensions include solder plating3 Dimensions are exclusive of mold flash amp metal burr4 Blo is facing up for mold and facing down for trimform ie reverse trimform5 Package surface matte finish VDI 11-13
Part Numbering System
Part Marking System
SP 1255P U T G
SeriesPackage
U=microDFN-6
T= Tape amp Reel
G= GreenTVS Diode Arrays(SPA Diodes)reg
A G 3Product Series
= SP1255PNumber of ChannelsA
Assembly Site
Ordering Information
Part Number Package Marking Min Order Qty Packaging Option P0P1 Packaging Specification
SP1255PUTG microDFN-6 G3 3000 Tape amp Reel ndash 8mm tape7rdquo reel 2mm4mm EIA RS-481A
TVS Diode Array (SPA reg Diodes)Low Capacitance ESD and Surge Protection - SP1255P Series
copy 2019 Littelfuse IncSpecifications are subject to change without notice
Revised 090619
Package Dimensions mdash microDFN-6 (18x20x055mm)
microDFN6 (18x20x055mm)
JEDEC MO-229
SymbolMillimeters Inches
Min Nom Max Min Nom Max
A 050 055 060 0020 0022 0024
A1 000 - 005 0000 - 0002
A3 015 Ref 0006 Ref
D 175 180 185 0069 0071 0073
E 195 200 205 0077 0079 0081
b 015 020 025 0006 0008 0010
L 020 030 040 0008 0012 0016
D2 035 045 055 0014 0018 0022
E2 074 084 094 0029 0033 0037
e 040 BSC 0016 BSC
e1 080 BSC 0031 BSC
B 080 BSC 0031 BSC
C 035 045 055 0014 0018 0022
F 081 084 087 0032 0033 0034
G 082 085 088 0032 0033 0034
J 024 025 026 0010 0010 0010
N 047 048 049 0018 0019 0020
P 024 025 026 0010 0010 0010
X 023 024 025 0009 0009 0009
Y 035 036 037 0014 0014 0014
Z 062 064 066 0024 0025 0026
Top View
Bottom View
Side View
Recommended Soldering Footprint
G
F
YP
B
C N J
X Z
Notes1 Dimension and tolerancing comform to ASME Y145M-19942 Controlling dimensions Millimeter Converted Inch dimensions are not necessarily exact
Embossed Carrier Tape amp Reel Specification mdash microDFN-6
Symbol Millimeters
A0 195 +- 005
B0 230 +- 005
D0 150 + 010
D1 Oslash 060 + 005
E 175 +- 010
F 350 +- 005
K0 075 +- 005
P0 200 +- 005
P1 400 +- 010
P2 400 +- 010
T 025 +- 002
W 800 + 030 - 010
P0 D0E
F
P1
P2
D1
W
T
B0K0
A0
5
5
221
2oslash1
322
oslash179
90
oslash155
37
oslash70
55oslash1
557
oslash58
11
243
2
146
111
904
Pin1 Location
Disclaimer Notice - Information furnished is believed to be accurate and reliable However users should independently evaluate the suitability of and test each product selected for their own applications Littelfuse products are not designed for and may not be used in all applications Read complete Disclaimer Notice at httpwwwlittelfusecomdisclaimer-electronics
TVS Diode Array (SPA reg Diodes)Low Capacitance ESD and Surge Protection - SP1255P Series
copy 2019 Littelfuse IncSpecifications are subject to change without notice
Revised 090619
Time
Tem
pera
ture
TP
TL
TS(max)
TS(min)
25
tP
tL
tS
time to peak temperature
PreheatPreheat
Ramp-upRamp-up
Ramp-downRamp-do
Critical ZoneTL to TPCritical ZoneTL to TP
Reflow Condition Pb ndash Free assembly
Pre Heat
- Temperature Min (Ts(min)) 150degC
- Temperature Max (Ts(max)) 200degC
- Time (min to max) (ts) 60 ndash 180 secs
Average ramp up rate (Liquidus) Temp (TL) to peak 3degCsecond max
TS(max) to TL - Ramp-up Rate 3degCsecond max
Reflow- Temperature (TL) (Liquidus) 217degC
- Temperature (tL) 60 ndash 150 seconds
Peak Temperature (TP) 260+0-5 degC
Time within 5degC of actual peak Temperature (tp) 20 ndash 40 seconds
Ramp-down Rate 6degCsecond max
Time 25degC to peak Temperature (TP) 8 minutes Max
Do not exceed 260degC
Soldering Parameters
Product Characteristics
Lead Plating Pre-Plated Frame
Lead Material Copper Alloy
Lead Coplanarity 00004 inches (0102mm)
Substrate material Silicon
Body Material Molded Epoxy
Flammability UL 94 V-0
Notes 1 All dimensions are in millimeters2 Dimensions include solder plating3 Dimensions are exclusive of mold flash amp metal burr4 Blo is facing up for mold and facing down for trimform ie reverse trimform5 Package surface matte finish VDI 11-13
Part Numbering System
Part Marking System
SP 1255P U T G
SeriesPackage
U=microDFN-6
T= Tape amp Reel
G= GreenTVS Diode Arrays(SPA Diodes)reg
A G 3Product Series
= SP1255PNumber of ChannelsA
Assembly Site
Ordering Information
Part Number Package Marking Min Order Qty Packaging Option P0P1 Packaging Specification
SP1255PUTG microDFN-6 G3 3000 Tape amp Reel ndash 8mm tape7rdquo reel 2mm4mm EIA RS-481A
TVS Diode Array (SPA reg Diodes)Low Capacitance ESD and Surge Protection - SP1255P Series
copy 2019 Littelfuse IncSpecifications are subject to change without notice
Revised 090619
Package Dimensions mdash microDFN-6 (18x20x055mm)
microDFN6 (18x20x055mm)
JEDEC MO-229
SymbolMillimeters Inches
Min Nom Max Min Nom Max
A 050 055 060 0020 0022 0024
A1 000 - 005 0000 - 0002
A3 015 Ref 0006 Ref
D 175 180 185 0069 0071 0073
E 195 200 205 0077 0079 0081
b 015 020 025 0006 0008 0010
L 020 030 040 0008 0012 0016
D2 035 045 055 0014 0018 0022
E2 074 084 094 0029 0033 0037
e 040 BSC 0016 BSC
e1 080 BSC 0031 BSC
B 080 BSC 0031 BSC
C 035 045 055 0014 0018 0022
F 081 084 087 0032 0033 0034
G 082 085 088 0032 0033 0034
J 024 025 026 0010 0010 0010
N 047 048 049 0018 0019 0020
P 024 025 026 0010 0010 0010
X 023 024 025 0009 0009 0009
Y 035 036 037 0014 0014 0014
Z 062 064 066 0024 0025 0026
Top View
Bottom View
Side View
Recommended Soldering Footprint
G
F
YP
B
C N J
X Z
Notes1 Dimension and tolerancing comform to ASME Y145M-19942 Controlling dimensions Millimeter Converted Inch dimensions are not necessarily exact
Embossed Carrier Tape amp Reel Specification mdash microDFN-6
Symbol Millimeters
A0 195 +- 005
B0 230 +- 005
D0 150 + 010
D1 Oslash 060 + 005
E 175 +- 010
F 350 +- 005
K0 075 +- 005
P0 200 +- 005
P1 400 +- 010
P2 400 +- 010
T 025 +- 002
W 800 + 030 - 010
P0 D0E
F
P1
P2
D1
W
T
B0K0
A0
5
5
221
2oslash1
322
oslash179
90
oslash155
37
oslash70
55oslash1
557
oslash58
11
243
2
146
111
904
Pin1 Location
Disclaimer Notice - Information furnished is believed to be accurate and reliable However users should independently evaluate the suitability of and test each product selected for their own applications Littelfuse products are not designed for and may not be used in all applications Read complete Disclaimer Notice at httpwwwlittelfusecomdisclaimer-electronics
TVS Diode Array (SPA reg Diodes)Low Capacitance ESD and Surge Protection - SP1255P Series
copy 2019 Littelfuse IncSpecifications are subject to change without notice
Revised 090619
Package Dimensions mdash microDFN-6 (18x20x055mm)
microDFN6 (18x20x055mm)
JEDEC MO-229
SymbolMillimeters Inches
Min Nom Max Min Nom Max
A 050 055 060 0020 0022 0024
A1 000 - 005 0000 - 0002
A3 015 Ref 0006 Ref
D 175 180 185 0069 0071 0073
E 195 200 205 0077 0079 0081
b 015 020 025 0006 0008 0010
L 020 030 040 0008 0012 0016
D2 035 045 055 0014 0018 0022
E2 074 084 094 0029 0033 0037
e 040 BSC 0016 BSC
e1 080 BSC 0031 BSC
B 080 BSC 0031 BSC
C 035 045 055 0014 0018 0022
F 081 084 087 0032 0033 0034
G 082 085 088 0032 0033 0034
J 024 025 026 0010 0010 0010
N 047 048 049 0018 0019 0020
P 024 025 026 0010 0010 0010
X 023 024 025 0009 0009 0009
Y 035 036 037 0014 0014 0014
Z 062 064 066 0024 0025 0026
Top View
Bottom View
Side View
Recommended Soldering Footprint
G
F
YP
B
C N J
X Z
Notes1 Dimension and tolerancing comform to ASME Y145M-19942 Controlling dimensions Millimeter Converted Inch dimensions are not necessarily exact
Embossed Carrier Tape amp Reel Specification mdash microDFN-6
Symbol Millimeters
A0 195 +- 005
B0 230 +- 005
D0 150 + 010
D1 Oslash 060 + 005
E 175 +- 010
F 350 +- 005
K0 075 +- 005
P0 200 +- 005
P1 400 +- 010
P2 400 +- 010
T 025 +- 002
W 800 + 030 - 010
P0 D0E
F
P1
P2
D1
W
T
B0K0
A0
5
5
221
2oslash1
322
oslash179
90
oslash155
37
oslash70
55oslash1
557
oslash58
11
243
2
146
111
904
Pin1 Location
Disclaimer Notice - Information furnished is believed to be accurate and reliable However users should independently evaluate the suitability of and test each product selected for their own applications Littelfuse products are not designed for and may not be used in all applications Read complete Disclaimer Notice at httpwwwlittelfusecomdisclaimer-electronics