1
Hakaru Mizoguchi, ****Gigaphoton Inc. 400 Yokokawa-Shinden, Oyama-shi, Tochigi, Japan 323-8558,
/ http://www.gigaphoton.com/
T. Inoue*, J. Fujimoto, T. Suzuki, T. Matsunaga, S.Sakanishi, M. Kaminishi, Y. Watanabe, T.Nakaike, M. Shinbori*, M.Yoshino*, T. Kawasuji, H.Nogawa, H.Umeda, H.Taniguchi*, Y.Sasaki*, J.Kinoshita*, T. Abe*, H. Tanaka, H. Hayashi, K.Miyao*, M. Niwano, A. Kurosu, M.Yashiro*, H.Nagano*,T. Igarashi, T.Mimura and K. Kakizaki**Ushio Inc., Komatsu Ltd. 400 Yokokawa-Shinden, Oyama-shi, Tochigi, Japan 323-8558,
High Power Injection Lock 6kHz 60W Laser for ArF Dry/Wet Lithography
2
OutlineIntroduction
Architecture of High Power Injection Lock Laser GT60AAdvanced “Injection lock” system Specification Advanced design
Performance data of GT60A
Advanced Bandwidth Control Module
Conclusion
Introduction
Architecture of High Power Injection Lock Laser GT60AAdvanced “Injection lock” system Specification Advanced design
Performance data of GT60A
Advanced Bandwidth Control Module
Conclusion
3
Model (Rep rate, Watt, E95)
G42A (4kHz, 20W, 0.75pm)
GT40A (4kHz, 45W, 0.50pm)193nm - ArF
G40K (4kHz, 30W, 1.2pm)
G41K (4kHz, 30W, 1.2pm)
G41K+ (4kHz, 40W, 1.2pm)
248nm - KrFDRAM ½ pitch
‘03 ‘04 ‘05 ‘06 ‘07 ‘08 ‘09 ‘10 ’11 ‘12
100 90 80 70 65 57 50 45 35
Year
ITRS Roadmap (2005)
Gigaphoton roadmap
Proto source (10W)
β source ( 50-100W)13.5 nm 13.5 nm -- EUVEUV
GT60A (6kHz, 60W, 0.50pm)
GT6xA (6kHz, >60W, 0.35pm) 193nm – ArFi
4
ArF roadmapPower Model
60W XT:1900i
60W
XT:1700iXT:1400F, iS610[op]
AS5[op], AS7
45W
XT:1400E, iXT:1400F,i[op]
AT:1250DXT:1250D, iS308, S610
AS5
20W AT:1200BXT:1250B
20W/11x0
AT:11x0AS2, AS3
20082005 200720062001 2002 2003 2004
G42A
GT60A
G41A
GT6xA
GT40A
5
ArF specifications
Wavelength nm 193 193 193 193 193Power W 20 20 45 60 60Pulse energy mJ 5 5 11.25 10 10Max. rep rate Hz 4000 4000 4000 6000 6000FWHM pm 0.35 0.3 0.2 0.2 TBDE95 pm 0.85 0.75 0.5 0.5 0.35Durability (Expected) MO Chamber Bpls 7 8 13 13 TBD PO Chamber Bpls - - 19 19 TBD LNM / MO LNM Bpls 7 8 - - TBD MM Bpls 10 10 30 30 TBD FM / PO FM Bpls 10 10 12 12 TBD PO RM Bpls - - 12 12 TBD
ArF model G42A GT40AG41A GT60A GT6xA
6
OutlineIntroduction
Architecture of High Power Injection Lock Laser GT60AAdvanced “Injection lock” system Specification Advanced design
Performance data of GT60A
Advanced Bandwidth Control Module
Conclusion
7
Injection Lock: Dual optical resonatorMOPA
Master Osc.LNM
Power Amp.
Power Osc.
Master Osc LNM
Injection LockMerit coming from Injection Lock technology
1. High Efficiency Theoretical Easy to get High PowerLong Chamber / LNM lifetime
2. High Stability Allowing Stable energy / spectrum performancenon-critical timing control Can use 2 charger system
=> Can replace chamber one by one
3. Long pulse Low load to optical modules Long Life OpticsLow load to litho tool optics
Merit comes from design concept
1. Short module exchange time by high maintainability design.
2. Short down time by self check function.
3. High stability of Spectrum by BCM (Optional).
8
GT60A outlook
GT60A and GT40A share a common platformPhysical size
Same as GT40A (2800x820x2100)Maintenance space
Same as GT40AUtilities
Electrical cable, breakerCoolant water connection Same as GT40AVentilation connection
GT60A enables highest flexibility of customer floor plan by common platform and utility connections
9
Direction of low cost of downtime
Reduce cost of downtimeSchedule downtime
Quick parts replacementUn-schedule downtime
Self diagnostics functionEvent downtime
Automatic background parameter tuningSystematic downtime
Advance gas maintenance
10
Reduction of schedule downtime
GT40/60A
(hours)
1F2 trap1.5MM0.6PO RM0.6PO FM2.5PO chamber2.5MO chamber
1F2 trap1.5MM0.6PO RM0.6PO FM2.5PO chamber2.5MO chamber
Parts replacement time
0
20
40
60
80
100
1Q 2Q 3Q 4Q 1Q 2Q 3Q 4Q 1Q 2Q 3Q 4Q 1Q 2Q 3Q 4Q 1Q 2Q 3Q 4Q
1st year 2nd year 3rd year 4th year 5th yearyear
tota
l rep
lace
men
t tim
e (h
our)
15 Bpls/year
GT40 / 60A
Conventional laser
GT60A is designed to realize quick parts replacement
11
An error occurs !LASER
OPERATION
ENTER
PREV. TRIGOFFTRIGON
10:15
DISPCLEAR
RESET
ERROR
?
01 / 01
GUIDE
Extremely low laser pulse energy has been detected.
E1310 ENERGY LOW!
00
M
LASEROPERATION
ENTER
PREV. TRIGOFFTRIGON
OBS
O.CMBR
O.CHG
O.PPM
A.CMBR
A.CHG
A.PPM
BEX
ABS
OPS W
LM
AWM
SHT
SELF CHECK
LNM
VENT
PWR
GASI/F
CTRLA.CFF
O.CFF
CLNT N2PRG INTLK
10:15M
★
Locate
OBS
O.CMBR
O.CHG
O.PPM
A.CMBR
A.CHG
A.PPM
BEX
ABS
OPS W
LM
AWM
SHT
SELF CHECK
LNM
VENT
PWR
GASI/F
CTRLA.CFF
O.CFF
CLNT N2PRG INTLK
10:15M
Query internally
OBS
O.CMBR
O.CHG
O.PPM
A.CMBR
A.CHG
A.PPM
BEX
ABS
OPS W
LM
AWM
SHT
SELF CHECK
LNM
VENT
PWR
GASI/F
CTRLA.CFF
O.CFF
CLNT N2PRG INTLK
10:15M
Found
LASEROPERATION
ENTER
PREV. TRIGOFFTRIGON
SELF CHECKM
同期制御
エネルギ制御
振 動
各モジュールでのエネルギ出力
AMP/OSC出力安定性
Check
Reduction of Unscheduled down
Self diagnostics functionEasily handling of dataQuick troubleshootingRecovery time reduction at an error occurrence
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"Automatic Background Parameter Tuning“Automatic operation parameter adjustmentNo interruption to scanner operations
Monitor Laser Indices
Reduction of event downtime
GT40/60A
Detect Condition Change Parameter Tuning
Reduction of Event down and Scheduled down
13
GPI direction for low cost of downtime
Reduce cost of downtimeSchedule downtime
Quick parts replacementUn-schedule downtime
Self diagnostics functionEvent downtime
Automatic background parameter tuningSystematic downtime
Advance gas maintenance
14
0
0.2
0.4
0.6
0.8
1
GT40A GT60A
(a.u
.)Gas exchange
GT60A aspire 50% reduction of gas replacement
Reduction of systematic downtime
15
Downtime in ArF laser
0.00%
0.10%
0.20%
0.30%
0.40%
0.50%
0.60%
0.70%
0.80%
Scheduledown
Un-Scheduledown
Systematicdown
Event down Total
Dow
ntim
e/5y
ears
(%)
GT60A
GT60AGT40A
Conventional laser
GT60A reduces systematic down from GT40A
GT platform reduced downtime dramatically
16
OutlineIntroduction
Architecture of High Power Injection Lock Laser GT60AAdvanced “Injection lock” system Specification Advanced design
Performance data of GT60A
Advanced Bandwidth Control Module
Conclusion
17
00.10.20.30.40.50.60.7
0 20 40 60 80 100 120 140Shot (Mpls)
E95
(pm
)
00.10.20.30.40.50.60.7
2000 3000 4000 5000 6000
Rep rate (Hz)
E95
(pm
)
GT60A Spectrum performance
E95 specification
Short term (Rep rate performance)
Middle term (Gaslife performance)E95 specification
18
-0.8-0.6-0.4-0.2
00.20.40.60.8
3000 3500 4000 4500 5000 5500 6000
Rep rate (Hz)
Dos
e M
AX/
MIN
, %
GT60A Dose stability performance
0.000.050.100.150.200.250.300.35
0 20 40 60 80 100 120 140
Shot (Mpls)
Dos
e (%
)Short term (Rep rate performance)
Middle term (Gaslife performance)Dose specification
Dose specification
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GT60A WL stability performance
-0.02-0.01
00.01
0.02
0:00:00 0:00:10 0:00:20 0:00:30 0:00:40 0:00:50 0:01:00
Time
WL_
AVE
.(pm
)
2kHz4kHz6kHz
Short term (Rep rate performance)
-0.020
-0.010
0.000
0.010
0.020
0 20 40 60 80 100 120 140
Shot (Mpls)
WL
erro
r E+/
- (pm
)
Middle term (Gaslife performance)specification
specification
20
OutlineIntroduction
Architecture of High Power Injection Lock Laser GT60AAdvanced “Injection lock” system Specification Advanced design
Performance data of GT60A
Advanced Bandwidth Control Module
Conclusion
21
Estimation of OPE change by SpectrumEstimation of OPE change by Spectrum
-3
-2
-1
0
1
2
3
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Laser spectrum (E95, pm)
OPE
(nm
)0.85NA
ArF8nm/pm
0.80NA KrF
4nm/pm
E95 influence on Optical Proximity Error stronger in ArF.
22
E95 spectral shape is actively controlled by active mechanism
0
2000
4000
6000
8000
10000
12000
-1 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 1Δλ (pm)
Inte
nsity
0.75pm 0.5pm 0.35pm
27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV
Active BCM (Bandwidth Control Module)
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High speed active E95 controlVery high speed E95 tuning by active E95 control (a few second range)Quick CD optimization / control is possible
0.3
0.35
0.4
0.45
0.5
0.55
0 5 10 15 20 25
Time (s)
E95
(pm
)
24
Middle term E95 controlActive BCM stabilize E95 drift dramatically. Very fast instability (in a few second range) is stabilized
( it was difficult to control by passive bandwidth control)
0.10.150.2
0.250.3
0.350.4
0.450.5
0 5 10 15 20 25
Shot No (Mpls)
E95
(pm
)
BCM_OFF BCM_ON (Target = 0.4pm)
25
E95 control demonstrationE95 changes from 0.3 to 0.5 pm (real time)
26
Active BCM (Bandwidth Control Module)
Tool to tool matchingTuning E95 performance differences on tool to tool E95 tuning range 0.4 – 0.5 pm*
* Detail specification is under investigation
Excellent proximity error stabilization (accurate and fast) Stabilization accuracy < +/- 0.05 pm
Active CD control toward more advanced CD controlAdvanced active CD control by optional wider setting of E95Advanced E95 optional value 0.4 – 0.70 pm*
27
OutlineIntroduction
Architecture of High Power Injection Lock Laser GT60AAdvanced “Injection lock” system Specification Advanced design
Performance data of GT60A
Advanced Bandwidth Control Module
Conclusion
28
ConclusionConclusionConclusion
• “Giga Twin” high power laser platform was developed based on injection lock technology. We already succeeded to commercialized 60W 6kHzGT60A.
• The GT60A is designed to save cost of downtime by quick parts replacement, self diagnostics function, automatic background parameter tuning and less parts replacement. Long and short term performance of Gt60A are verified.
• Bandwidth control technology is developed for better CD control and proximity muching. Active BCM (Band width control Module) technology provides accurate and fast proximity stabilization, tool to tool matching and active CD control toward more advanced control.
• We are convinced “GigaTwin” series will lead the ArF light source for semiconductor industry below 45nm node era.
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AcknowledgementThis development is partially based on F2 laser research performed under the management by Association of Super-advanced Electronics Technologies (ASET) in the Ministry of Economy Trade and Industry (METI) program of “F2laser lithography technology” supported by New Energy and industrial technology Development Organization (NEDO) in JAPAN during 2000-2002.
30Finally, See you again at next Microliothography in 2007.
See you soon at your factory with our GT60A ! See you soon at your factory with our GT60A !
GT60A shipping from Gigaphoton