High Power Injection Lock 6kHz 60W Laser for ArF Dry/Wet ......ArF specifications Wavelength nm 193 193 193 193 193 Power W 20 20 45 60 60 Pulse energy mJ 5 5 11.25 10 10 Max. rep

1

Hakaru Mizoguchi, ****Gigaphoton Inc. 400 Yokokawa-Shinden, Oyama-shi, Tochigi, Japan 323-8558,

/ http://www.gigaphoton.com/

T. Inoue*, J. Fujimoto, T. Suzuki, T. Matsunaga, S.Sakanishi, M. Kaminishi, Y. Watanabe, T.Nakaike, M. Shinbori*, M.Yoshino*, T. Kawasuji, H.Nogawa, H.Umeda, H.Taniguchi*, Y.Sasaki*, J.Kinoshita*, T. Abe*, H. Tanaka, H. Hayashi, K.Miyao*, M. Niwano, A. Kurosu, M.Yashiro*, H.Nagano*,T. Igarashi, T.Mimura and K. Kakizaki**Ushio Inc., Komatsu Ltd. 400 Yokokawa-Shinden, Oyama-shi, Tochigi, Japan 323-8558,

High Power Injection Lock 6kHz 60W Laser for ArF Dry/Wet Lithography

2

OutlineIntroduction

Architecture of High Power Injection Lock Laser GT60AAdvanced “Injection lock” system Specification Advanced design

Performance data of GT60A

Advanced Bandwidth Control Module

Conclusion

Introduction

Architecture of High Power Injection Lock Laser GT60AAdvanced “Injection lock” system Specification Advanced design

Performance data of GT60A

Advanced Bandwidth Control Module

Conclusion

3

Model (Rep rate, Watt, E95)

G42A (4kHz, 20W, 0.75pm)

GT40A (4kHz, 45W, 0.50pm)193nm - ArF

G40K (4kHz, 30W, 1.2pm)

G41K (4kHz, 30W, 1.2pm)

G41K+ (4kHz, 40W, 1.2pm)

248nm - KrFDRAM ½ pitch

‘03 ‘04 ‘05 ‘06 ‘07 ‘08 ‘09 ‘10 ’11 ‘12

100 90 80 70 65 57 50 45 35

Year

ITRS Roadmap (2005)

Gigaphoton roadmap

Proto source (10W)

β source ( 50-100W)13.5 nm 13.5 nm -- EUVEUV

GT60A (6kHz, 60W, 0.50pm)

GT6xA (6kHz, >60W, 0.35pm) 193nm – ArFi

4

ArF roadmapPower Model

60W XT:1900i

60W

XT:1700iXT:1400F, iS610[op]

AS5[op], AS7

45W

XT:1400E, iXT:1400F,i[op]

AT:1250DXT:1250D, iS308, S610

AS5

20W AT:1200BXT:1250B

20W/11x0

AT:11x0AS2, AS3

20082005 200720062001 2002 2003 2004

G42A

GT60A

G41A

GT6xA

GT40A

5

ArF specifications

Wavelength nm 193 193 193 193 193Power W 20 20 45 60 60Pulse energy mJ 5 5 11.25 10 10Max. rep rate Hz 4000 4000 4000 6000 6000FWHM pm 0.35 0.3 0.2 0.2 TBDE95 pm 0.85 0.75 0.5 0.5 0.35Durability (Expected) MO Chamber Bpls 7 8 13 13 TBD PO Chamber Bpls - - 19 19 TBD LNM / MO LNM Bpls 7 8 - - TBD MM Bpls 10 10 30 30 TBD FM / PO FM Bpls 10 10 12 12 TBD PO RM Bpls - - 12 12 TBD

ArF model G42A GT40AG41A GT60A GT6xA

6

OutlineIntroduction

Architecture of High Power Injection Lock Laser GT60AAdvanced “Injection lock” system Specification Advanced design

Performance data of GT60A

Advanced Bandwidth Control Module

Conclusion

7

Injection Lock: Dual optical resonatorMOPA

Master Osc.LNM

Power Amp.

Power Osc.

Master Osc LNM

Injection LockMerit coming from Injection Lock technology

1. High Efficiency Theoretical Easy to get High PowerLong Chamber / LNM lifetime

2. High Stability Allowing Stable energy / spectrum performancenon-critical timing control Can use 2 charger system

=> Can replace chamber one by one

3. Long pulse Low load to optical modules Long Life OpticsLow load to litho tool optics

Merit comes from design concept

1. Short module exchange time by high maintainability design.

2. Short down time by self check function.

3. High stability of Spectrum by BCM (Optional).

8

GT60A outlook

GT60A and GT40A share a common platformPhysical size

Same as GT40A (2800x820x2100)Maintenance space

Same as GT40AUtilities

Electrical cable, breakerCoolant water connection Same as GT40AVentilation connection

GT60A enables highest flexibility of customer floor plan by common platform and utility connections

9

Direction of low cost of downtime

Reduce cost of downtimeSchedule downtime

Quick parts replacementUn-schedule downtime

Self diagnostics functionEvent downtime

Automatic background parameter tuningSystematic downtime

Advance gas maintenance

10

Reduction of schedule downtime

GT40/60A

(hours)

1F2 trap1.5MM0.6PO RM0.6PO FM2.5PO chamber2.5MO chamber

1F2 trap1.5MM0.6PO RM0.6PO FM2.5PO chamber2.5MO chamber

Parts replacement time

0

20

40

60

80

100

1Q 2Q 3Q 4Q 1Q 2Q 3Q 4Q 1Q 2Q 3Q 4Q 1Q 2Q 3Q 4Q 1Q 2Q 3Q 4Q

1st year 2nd year 3rd year 4th year 5th yearyear

tota

l rep

lace

men

t tim

e (h

our)

15 Bpls/year

GT40 / 60A

Conventional laser

GT60A is designed to realize quick parts replacement

11

An error occurs !LASER

OPERATION

ENTER

PREV. TRIGOFFTRIGON

10:15

DISPCLEAR

RESET

ERROR

?

01 / 01

GUIDE

Extremely low laser pulse energy has been detected.

E1310 ENERGY LOW!

00

M

LASEROPERATION

ENTER

PREV. TRIGOFFTRIGON

OBS

O.CMBR

O.CHG

O.PPM

A.CMBR

A.CHG

A.PPM

BEX

ABS

OPS W

LM

AWM

SHT

SELF CHECK

LNM

VENT

PWR

GASI/F

CTRLA.CFF

O.CFF

CLNT N2PRG INTLK

10:15M

★

Locate

OBS

O.CMBR

O.CHG

O.PPM

A.CMBR

A.CHG

A.PPM

BEX

ABS

OPS W

LM

AWM

SHT

SELF CHECK

LNM

VENT

PWR

GASI/F

CTRLA.CFF

O.CFF

CLNT N2PRG INTLK

10:15M

Query internally

OBS

O.CMBR

O.CHG

O.PPM

A.CMBR

A.CHG

A.PPM

BEX

ABS

OPS W

LM

AWM

SHT

SELF CHECK

LNM

VENT

PWR

GASI/F

CTRLA.CFF

O.CFF

CLNT N2PRG INTLK

10:15M

Found

LASEROPERATION

ENTER

PREV. TRIGOFFTRIGON

SELF CHECKM

同期制御

エネルギ制御

振　動

各モジュールでのエネルギ出力

AMP/OSC出力安定性

Check

Reduction of Unscheduled down

Self diagnostics functionEasily handling of dataQuick troubleshootingRecovery time reduction at an error occurrence

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"Automatic Background Parameter Tuning“Automatic operation parameter adjustmentNo interruption to scanner operations

Monitor Laser Indices

Reduction of event downtime

GT40/60A

Detect Condition Change Parameter Tuning

Reduction of Event down and Scheduled down

13

GPI direction for low cost of downtime

Reduce cost of downtimeSchedule downtime

Quick parts replacementUn-schedule downtime

Self diagnostics functionEvent downtime

Automatic background parameter tuningSystematic downtime

Advance gas maintenance

14

0

0.2

0.4

0.6

0.8

1

GT40A GT60A

(a.u

.)Gas exchange

GT60A aspire 50% reduction of gas replacement

Reduction of systematic downtime

15

Downtime in ArF laser

0.00%

0.10%

0.20%

0.30%

0.40%

0.50%

0.60%

0.70%

0.80%

Scheduledown

Un-Scheduledown

Systematicdown

Event down Total

Dow

ntim

e/5y

ears

(%)

GT60A

GT60AGT40A

Conventional laser

GT60A reduces systematic down from GT40A

GT platform reduced downtime dramatically

16

OutlineIntroduction

Architecture of High Power Injection Lock Laser GT60AAdvanced “Injection lock” system Specification Advanced design

Performance data of GT60A

Advanced Bandwidth Control Module

Conclusion

17

00.10.20.30.40.50.60.7

0 20 40 60 80 100 120 140Shot (Mpls)

E95

(pm

)

00.10.20.30.40.50.60.7

2000 3000 4000 5000 6000

Rep rate (Hz)

E95

(pm

)

GT60A Spectrum performance

E95 specification

Short term (Rep rate performance)

Middle term (Gaslife performance)E95 specification

18

-0.8-0.6-0.4-0.2

00.20.40.60.8

3000 3500 4000 4500 5000 5500 6000

Rep rate (Hz)

Dos

e M

AX/

MIN

, %

GT60A Dose stability performance

0.000.050.100.150.200.250.300.35

0 20 40 60 80 100 120 140

Shot (Mpls)

Dos

e (%

)Short term (Rep rate performance)

Middle term (Gaslife performance)Dose specification

Dose specification

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GT60A WL stability performance

-0.02-0.01

00.01

0.02

0:00:00 0:00:10 0:00:20 0:00:30 0:00:40 0:00:50 0:01:00

Time

WL_

AVE

.(pm

)

2kHz4kHz6kHz

Short term (Rep rate performance)

-0.020

-0.010

0.000

0.010

0.020

0 20 40 60 80 100 120 140

Shot (Mpls)

WL

erro

r E+/

- (pm

)

Middle term (Gaslife performance)specification

specification

20

OutlineIntroduction

Architecture of High Power Injection Lock Laser GT60AAdvanced “Injection lock” system Specification Advanced design

Performance data of GT60A

Advanced Bandwidth Control Module

Conclusion

21

Estimation of OPE change by SpectrumEstimation of OPE change by Spectrum

-3

-2

-1

0

1

2

3

0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

Laser spectrum (E95, pm)

OPE

(nm

)0.85NA

ArF8nm/pm

0.80NA KrF

4nm/pm

E95 influence on Optical Proximity Error stronger in ArF.

22

E95 spectral shape is actively controlled by active mechanism

0

2000

4000

6000

8000

10000

12000

-1 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 1Δλ (pm)

Inte

nsity

0.75pm 0.5pm 0.35pm

27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV27kV

Active BCM (Bandwidth Control Module)

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High speed active E95 controlVery high speed E95 tuning by active E95 control (a few second range)Quick CD optimization / control is possible

0.3

0.35

0.4

0.45

0.5

0.55

0 5 10 15 20 25

Time (s)

E95

(pm

)

24

Middle term E95 controlActive BCM stabilize E95 drift dramatically. Very fast instability (in a few second range) is stabilized

( it was difficult to control by passive bandwidth control)

0.10.150.2

0.250.3

0.350.4

0.450.5

0 5 10 15 20 25

Shot No (Mpls)

E95

(pm

)

BCM_OFF BCM_ON (Target = 0.4pm)

25

E95 control demonstrationE95 changes from 0.3 to 0.5 pm (real time)

26

Active BCM (Bandwidth Control Module)

Tool to tool matchingTuning E95 performance differences on tool to tool E95 tuning range 0.4 – 0.5 pm*

* Detail specification is under investigation

Excellent proximity error stabilization (accurate and fast) Stabilization accuracy < +/- 0.05 pm

Active CD control toward more advanced CD controlAdvanced active CD control by optional wider setting of E95Advanced E95 optional value 0.4 – 0.70 pm*

27

OutlineIntroduction

Architecture of High Power Injection Lock Laser GT60AAdvanced “Injection lock” system Specification Advanced design

Performance data of GT60A

Advanced Bandwidth Control Module

Conclusion

28

ConclusionConclusionConclusion

• “Giga Twin” high power laser platform was developed based on injection lock technology. We already succeeded to commercialized 60W 6kHzGT60A.

• The GT60A is designed to save cost of downtime by quick parts replacement, self diagnostics function, automatic background parameter tuning and less parts replacement. Long and short term performance of Gt60A are verified.

• Bandwidth control technology is developed for better CD control and proximity muching. Active BCM (Band width control Module) technology provides accurate and fast proximity stabilization, tool to tool matching and active CD control toward more advanced control.

• We are convinced “GigaTwin” series will lead the ArF light source for semiconductor industry below 45nm node era.

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AcknowledgementThis development is partially based on Ｆ２ laser research performed under the management by Association of Super-advanced Electronics Technologies (ASET) in the Ministry of Economy Trade and Industry (METI) program of “F2laser lithography technology” supported by New Energy and industrial technology Development Organization (NEDO) in JAPAN during 2000-2002.

30Finally, See you again at next Microliothography in 2007.

See you soon at your factory with our GT60A ! See you soon at your factory with our GT60A !

GT60A shipping from Gigaphoton