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Strs6301 Tv Sony

Jun 04, 2018

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    SRN KEN E L E C T R I C C O M P A N Y , LTD

    1.

    2.

    3.

    4.

    SANKlDl SWJKtIIlVG 1UWLAlOR HYRRTD lC

    T y p e : S T R S 6 3 1

    The present specifications shall only apply to Sanken SwitchinR Regulator Ilybrjd IC, typeSTR-S6301.

    General

    2.1 Category : Hybrid incorporated with a S-layer Silkon Transistor,

    2.2 Construction: Plastic Mold Package kansfer Mold).

    .

    2.3 Applicat ion: Dire control., RLC. type Swjtching RcguJator featuring DrjveCircuit and the Over Current Protecljon (using Photo Couplerb aspri nrarykccondary isolation element,

    uivalent Circuit

    r

    hw33rance and OutlineAppearance4 .

    4. 2

    4.3

    Jhe M Y shall be clean and shall not bear any s t n rust or fl w

    Outline DrawingsRefer to PaEe 9

    MarkingThe type number and lot number shall be legitimat~.ly be marked by l s r printing;,Refer to Page 9.

    1 Cogxtorter/bnmon (Power T ;h&

    4: ..-

    Drj ve Control5. 6. Current Detectm Base7 EartWCurrent Detector8 .lkive Tr2 Base9 YhoLo Coupler -

    Date: DecL 16, 99 pe ifhtion N O.: S W 7J_7OE 1 Y

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    5, Maxhe Ratings (T 5r) P - - . - - - - __-I-____-___-. _ VP _ _ .-Be I_. .--__ DescripEion Symbol

    ----. _ .-_-. liat.i ng _ Unit --~;; ; y--; ;--~-

    Trl Colhc tor i ttor Voltage ------ . __ _ . __ _ _._.I,

    hx? 500 V- - -v b I X I

    Ph 4-2 Applying Voktage v d 12 .a __ . w-w--. . . .

    . _ .- - A B .-L-P- v . _ - -Pin Z-5 Applying Vol tage

    -. --- 1,,---WC_Vz- s 12

    I _s _ _ __ __v

    G s A _ ----Yin 5 8 Applying Voltage

    .---..--p-LVs- 4 30 v-Y-B--. _ a

    P.i.n 7-6 Applying Voltage..-

    v7 6 5 V ---- de . ._ .__ _ _-.--. ..-.._-. _ _ Tr 1 COJlector Current

    ..I.. --I* .._-- . .. -_.. ~ -II~LI 1O Pulse:20) A

    m e q..

    _ _ - _ P 2-..-.Tr4 Collector Current

    brr4 I 500 nA.I_- _ Y

    D2 Forward Current- - -

    ZYNfD 50 0 mA- - -- IDa Forward Current

    - .I. .I INtD3 100 RIA- - , _ _ I

    Max. Power Did paI ion 3.2FD No fin_ _ W - - l- - - - r,2.7

    - P - ~ - - P . T, r=lOOC X3 _ ITrl Junction Temperature L +I50 - u p - - . - _ C /

    Frame Temperature (Operating) ch__

    Storage Tempmature . .

    Tat s ---

    -30 - +125 c

    Max. 011 tput Curren I; 10 _

    _1.7_- A Vo =115V _q 5- ___. _ _ _.... _ _. I

    F3 ___

    8. bctrical Characterist.ic (T iV) Trl Characteristic _P C__v Description

    __Symb0.I- - - - Ratings Unit- W I -. Conditions_ - - -

    Cdlector Saturation Vollage VCatSATI- - _I__ --.------- _.--

    0.5 Max. --- L-p-- _ . . .--- - - - - - -_- - -~_-~ . .__ V 1c =6A, I =I 2ACOllectOr Cut-Off Current

    1 w

    ICEX m p 1 0 Mm___ _ mA VcE= soovv s I v _ m m _Rase-Emitter Sahraticjn Volt;

    _

    I _ . . _ - - - VDe 3ATj 1.5 Max. _ _ I _-_ - Ic =fiA, Jn=1.2AWI_

    IX: Current Gain_ - - - . . - _ _ - - _

    h e . - - I - . _ - 15-40- - , - - VCE=/IV, Tc=lA-- --P..Thermal Resistance

    - - _LCZ

    P _0 7

    _ - - - - _C/W Junction--Internal ram

    wi tchi nB Time - -.--.. ,._-_,

    L 1 Max. tr

    vs Measuring Circuit I< 0.6 Max.--.- - I - _ - _ _ ._P*- - - ____I___ -.- ----- ---. .-___ _.___. ___ a _ _ _

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    2) ugge ikone Grease: C-746 WTN-ETSU CIKMITAlSYG6 6 TUSIIT~A SIIJCON~SW? OR Y SILICONE

    8. Other Conditions

    l This product is designed and built, for is susceptible tokhe rad iation

    use under the normal environment.

    2 AS j.s PrC Ct is recomized as the S t r a t eg ic M a t e r i a l which is un p control of Iradc LJWrt Law an export khxmce granted bi the govern-t j,s r uj,edfor exportation,

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    1

    1

    II

    I

    I

    I

    VOUT0

    1c

    a lx : peci f i~lion No. :

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    Measuring circuit, Svitching time)

    2ops

    Rz

    -bBl

    GND

    tb

    o

    I

    90

    ON

    Base Current

    IBZ

    t32~ll tor Curren

    x se

    k

    Ic = 3.5 A , Rr 6n

    h=8 mA 182 =80CI

    Dir Le : kc. 18 99 Speci f i tioll No. I ss1 1 7 7 0 I rr sl

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    b.

    0

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    SANKEN E L E C T R I C C O M PA N Y, LT D .

    S T R - S 6 3 0 1Reverse Bias A-S-0. curve

    h=100 p.sec (duky 1% or lessno fin natural cooling (Ta=Z YCL q 6 mtl, Iel =3. i Iee = 5A

    2

    clH

    4 l

    53

    8

    I

    0.10 100 2 300 400 SOrJ 600

    Collector-Emitter vohge V,, V)

    Date: kc, 16, 1991 Spmzihation No. : S S I F l . 7 1 7 0 E 7/9

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    S NKEN E L E C T R C C O M P A N Y , LTU

    STR-S6000 series derating curve

    S -

    i . -

    0 20 46 6 0 8 0 1 0 0 1 2 5

    m ht tzmperatwe Ta l

    Dale: r l=. IG 1991 pet fication No. : sm 1 7 1 7 0 E : I B

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    S NK N E L E C T R I C C O M P A N Y . LT D .

    unit : m

    1

    1 Part Number : S63

    (2) Lut Number :1st digit The last digit of AD2nd digit : yonth

    9 Jan, Sept Ocl okr

    N November1 2 3 4 5 6 7 0 9 n ; December

    3rd 4thdigits : The date 01 3

    I he lead center is offset by 4m hxn the center of the package. he dimension measured at the closest point to the My.

    Date: Dec 16, 1991 Specification No.: SSE L7170E g/9

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    This datasheet has been downloaded from:

    www.DatasheetCatalog.com

    Datasheets for electronic components.

    http://www.datasheetcatalog.com/http://www.datasheetcatalog.com/