This is information on a product in full production. November 2012 Doc ID 022225 Rev 2 1/13 13 STY100NM60N N-channel 600 V, 0.028 Ω typ., 98 A MDmesh™ II Power MOSFET in a Max247 package Datasheet — production data Features ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram Type V DSS @ T Jmax R DS(on) max I D STY100NM60N 650 V < 0.029 Ω 98 A Max247 1 2 3 Table 1. Device summary Order code Marking Package Packaging STY100NM60N 100NM60N Max247 Tube www.st.com
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N-channel 600 V, 0.028 typ., 98 A MDmesh II Power MOSFET in a … · N-channel 600 V, 0.028 Ω typ., 98 A MDmesh™ II Power MOSFET in a Max247 package ... D S L=100μH μF 3.3 1000
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This is information on a product in full production.
November 2012 Doc ID 022225 Rev 2 1/13
13
STY100NM60N
N-channel 600 V, 0.028 Ω typ., 98 A MDmesh™ II Power MOSFET in a Max247 package
Datasheet — production data
Features
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications■ Switching applications
DescriptionThis device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Figure 14. Switching times test circuit for resistive load
Figure 15. Gate charge test circuit
Figure 16. Test circuit for inductive load switching and diode recovery times
Figure 17. Unclamped inductive load test circuit
Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF3.3μF
VDD
AM01469v1
VDD
47kΩ 1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200μF
PW
IG=CONST100Ω
100nF
D.U.T.
VG
AM01470v1
AD
D.U.T.
SB
G
25 Ω
A A
BB
RG
G
FASTDIODE
D
S
L=100μH
μF3.3 1000
μF VDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200μF
3.3μF VDD
AM01472v1
V(BR)DSS
VDDVDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tftr
90%
10%
10%
0
0
90%
90%
10%
VGS
STY100NM60N Package mechanical data
Doc ID 022225 Rev 2 9/13
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
05-Nov-2012 2Document status promoted from preliminary to production data.Added Section 2.1: Electrical characteristics (curves).Minor text changes.
STY100NM60N
Doc ID 022225 Rev 2 13/13
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