TO-220FP 1 2 3 AM15572v1_no_tab D(2) G(1) S(3) Features Order code V DS R DS(on) max. I D STF16N90K5 900 V 330 mΩ 15 A • Industry’s lowest R DS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested • Zener-protected Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STF16N90K5 Product summary Order code STF16N90K5 Marking 16N90K5 Package TO-220FP Packing Tube N-channel 900 V, 280 mΩ typ., 15 A MDmesh K5 Power MOSFET in a TO-220FP package STF16N90K5 Datasheet DS13052 - Rev 1 - August 2019 For further information contact your local STMicroelectronics sales office. www.st.com
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Datasheet - STF16N90K5 - N-channel 900 V, 280 mΩ typ., 15 ... · N-channel 900 V, 280 mΩ typ., 15 A MDmesh K5 Power MOSFET in a TO-220FP package STF16N90K5 Datasheet DS13052 - Rev
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TO-220FP
12
3
AM15572v1_no_tab
D(2)
G(1)
S(3)
FeaturesOrder code VDS RDS(on) max. ID
STF16N90K5 900 V 330 mΩ 15 A
• Industry’s lowest RDS(on) x area• Industry’s best FoM (figure of merit)• Ultra-low gate charge• 100% avalanche tested• Zener-protected
Applications• Switching applications
DescriptionThis very high voltage N-channel Power MOSFET is designed using MDmesh K5technology based on an innovative proprietary vertical structure. The result is adramatic reduction in on-resistance and ultra-low gate charge for applicationsrequiring superior power density and high efficiency.
Product status link
STF16N90K5
Product summary
Order code STF16N90K5
Marking 16N90K5
Package TO-220FP
Packing Tube
N-channel 900 V, 280 mΩ typ., 15 A MDmesh K5 Power MOSFET in a TO-220FP package
STF16N90K5
Datasheet
DS13052 - Rev 1 - August 2019For further information contact your local STMicroelectronics sales office.
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)GSOGate-source breakdownvoltage IGS= ±1 mA, ID= 0 A 30 - - V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.The Zener voltage facilitates efficient and cost-effective device integrity protection,thus eliminating the need foradditional external componentry.
Figure 13. Test circuit for resistive load switching times
AM01468v1
VD
RG
RL
D.U.T.
2200μF VDD
3.3μF+
pulse width
VGS
Figure 14. Test circuit for gate charge behavior
AM01469v10
47 kΩ
2.7 kΩ
1 kΩ
IG= CONST100 Ω D.U.T.
+pulse width
VGS
2200μF
VG
VDD
RL
Figure 15. Test circuit for inductive load switching anddiode recovery times
AM01470v1
AD
D.U.T.S
B
G
25 Ω
A A
B B
RG
GD
S
100 µH
µF3.3 1000
µF VDD
D.U.T.
+
_
+
fastdiode
Figure 16. Unclamped inductive load test circuit
AM01471v1
VD
ID
D.U.T.
L
VDD+
pulse width
Vi
3.3µF
2200µF
Figure 17. Unclamped inductive waveform
AM01472v1
V(BR)DSS
VDDVDD
VD
IDM
ID
Figure 18. Switching time waveform
AM01473v1
0
VGS 90%
VDS
90%
10%
90%
10%
10%
ton
td(on) tr
0
toff
td(off) tf
STF16N90K5Test circuits
DS13052 - Rev 1 page 7/12
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and productstatus are available at: www.st.com. ECOPACK is an ST trademark.
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to STproducts and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. STproducts are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
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