This is information on a product in full production. November 2012 Doc ID 15420 Rev 5 1/21 21 STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N, STW13NM60N N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ II Power MOSFET in TO-220FP, I²PAK, TO-220, IPAK, TO-247 packages Datasheet — production data Features ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applications ■ Switching applications Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram Order codes V DSS (@Tjmax) R DS(on) max I D STF13NM60N STI13NM60N STP13NM60N STU13NM60N STW13NM60N 650 V < 0.36 Ω 11 A TO-220 TO-220FP 1 2 3 TAB 1 2 3 1 2 3 TO-247 1 2 3 I²PAK 3 2 1 IPAK TAB TAB Table 1. Device summary Order codes Marking Packages Packaging STF13NM60N STI13NM60N STP13NM60N STU13NM60N STW13NM60N 13NM60N TO-220FP I²PAK TO-220 IPAK TO-247 Tube Tube Tube Tube Tube www.st.com
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STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N, STW13NM60N · STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N, STW13NM60N N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ II Power MOSFET
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This is information on a product in full production.
N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ II Power MOSFET in TO-220FP, I²PAK, TO-220, IPAK, TO-247 packages
Datasheet — production data
Features
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications■ Switching applications
DescriptionThese devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Figure 19. Switching times test circuit for resistive load
Figure 20. Gate charge test circuit
Figure 21. Test circuit for inductive load switching and diode recovery times
Figure 22. Unclamped inductive load test circuit
Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF3.3μF
VDD
AM01469v1
VDD
47kΩ 1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200μF
PW
IG=CONST100Ω
100nF
D.U.T.
VG
AM01470v1
AD
D.U.T.
SB
G
25 Ω
A A
BB
RG
G
FASTDIODE
D
S
L=100μH
μF3.3 1000
μF VDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200μF
3.3μF VDD
AM01472v1
V(BR)DSS
VDDVDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tftr
90%
10%
10%
0
0
90%
90%
10%
VGS
Package mechanical data STF/I/P/U/W13NM60N
10/21 Doc ID 15420 Rev 5
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
18-Jan-2012 4– Added new package, mechanical data: IPAK– Minor text changes
14-Nov-2012 5The part numbers STB13NM60N and STD13NM60N have been moved to a separate datasheet.
Section 4: Package mechanical data has been updated.
STF/I/P/U/W13NM60N
Doc ID 15420 Rev 5 21/21
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