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FRAUNHOFER-INSTITUT FÜR SILIZIUMTECHNOLOGIE ISIT MODULE SERVICES: QUALITY AND RELIABILITY COMPONENTS, MODULES, PRINTED CIRCUIT BOARD ASSEMBLIES, MICROSYSTEMS AND SYSTEMS OF ELECTRONICS AND POWER ELECTRONICS
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MODULE SERVICES: QUALITY AND RELIABILITY · 2019-12-02 · Non destructive analysis methods • Electrical characterization at wafer and module level (e.g., by automated wafer probing)

Feb 15, 2020

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Page 1: MODULE SERVICES: QUALITY AND RELIABILITY · 2019-12-02 · Non destructive analysis methods • Electrical characterization at wafer and module level (e.g., by automated wafer probing)

F R A U N H O F E R - I N S T I T U T F Ü R S I L I Z I U M T E C H N O L O G I E I S I T

MODULE SERVICES: QUALITY AND RELIABILITYC O M P O N E N T S , M O D U L E S , P R I N T E D C I R C U I T B O A R D A S S E M B L I E S , M I C R O S Y S T E M S A N D

S Y S T E M S O F E L E C T R O N I C S A N D P O W E R E L E C T R O N I C S

Page 2: MODULE SERVICES: QUALITY AND RELIABILITY · 2019-12-02 · Non destructive analysis methods • Electrical characterization at wafer and module level (e.g., by automated wafer probing)

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CT of a foam structureWafer measurement

The ”Module Services“ working group deals with testing,

assessment, failure and damage analysis as well as quality and

reliability assessment of systems and assemblies of electronics

and power electronics and provides consultance during

electronics developement (including e.g. layout, assembly and

production technology) by experts.

Product Quality Evaluation

Non destructive analysis methods

• Electrical characterization at wafer and module level

(e.g., by automated wafer probing) for verifi cation of

characteristic data sheet specifi cations such as e.g. leakage

current, dielectric withstanding voltage, dynamic behavior

• Laser vibrometry (e.g. for MEMS oscillating amplitude

measurement)

• Layer thickness and optical parameter (n,k) measurement

by monochromatic ellipsometry

• Determination of the switching characteristics

• High-resolution lock-in thermography

• Thermal measurements (for example by means of

IR thermography) such as heat conductivity, static and

dynamic thermal resistance (Rth and Zth from mW ... kW)

• Heating behavior and transient heat distribution

(thermal impedance)

• Measurements under environmental conditions

• Combined and automated tests

(electrical-thermal-mechanical)

• Evaluation of electronic assemblies according IPC-A-610

and other standards e.g. DIN, ISO, JEDEC, AEC-Q100 etc.

• Evaluation of PCBs according IPC-A-600, IPC-6012 etc.

• Optical inspection: Micro- and macro photography,

digital microscopy

• Surface profi le analysis (confocal laser profi lometry,

white light interferometry)

• X-ray inspection: 2D radiography, digital computer

tomography (CT)

• Scanning acoustic microscopy (SAM)

• Thermography

• Infrared spectroscopy

• X-ray fl uorescence analysis

(coating thickness measurement, RoHS conformity test)

Q U A L I T Y A N D R E L I A B I L I T Y : C O M P O N E N T S , M I C R O S Y S T E M S , M O D U L E S , P R I N T E D C I R C U I T B O A R D A S S E M B L I E S , E L E C T R O N I C S Y S T E M S

Upper from left to right:

Electrical breakdown between conductive layers on chip

Crack in surface Si below a wire bond contact

Cross section of a Cu ribbon contact (width 2 mm, thickness 200 µm)

Lower from left to right:

Diffusion controlled delamination of a Cu coating

Whisker growth

Tombstoning of SMD parts during refl ow solder process

Page 3: MODULE SERVICES: QUALITY AND RELIABILITY · 2019-12-02 · Non destructive analysis methods • Electrical characterization at wafer and module level (e.g., by automated wafer probing)

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Profi le of a PCB surface Wet-etch opened chip package

Surface analysis

• Contact angle measurements

• Sticking tests

• Wetting tests

• Adhesion force measurements

• Particle contamination

Reliability Testing and Lifetime Prediction

• Lifetime investigations with online data acquisition in

customer-specifi c electrical and hydraulic wiring with active

and passive accelerated aging

• Accelerated ageing with online data logging (climate testing,

thermal shock, thermal cycling, high temperature storage)

• Active power cycle test up to 2000A

(to intentionally induced component damage)

• Model calculations to the prediction of lifetime (by suited

accelerated aging mechanisms) on basis of observed failure

mechanisms

• Surface insulation resistance (SIR) test

Q U A L I T Y A N D R E L I A B I L I T Y : C O M P O N E N T S , M I C R O S Y S T E M S , M O D U L E S , P R I N T E D C I R C U I T B O A R D A S S E M B L I E S , E L E C T R O N I C S Y S T E M S

Reliability of

heavy wire bond connectscycles to failure Nf

20 104 105 106 107 1080

200180160140120

100

80

60

40

temperature swing ∆T [K]

Bond WireFatigue Limit

Destructive analysis methods

• Metallographic analysis / cross section polishing

• Focussed Ion Beam (FIB)

• Selective metal etching

• Package opening

• Solder heat resistance

• Process and production capability, e.g. Moisture Sensitivity

Level (MSL)

• Scanning electron microscopy (SEM)

• Atomic force microscopy (AFM)

• Material analysis due to energy dispersive X-ray

spectroscopy (EDX)

• Ionography

• Wetting balance test

Structure and material analysis

• Cracks (after aging)

• Damages after thermal overload

• De-alloying effects

• Visualisation of solder texture and and of boundary layers

• Intermetallic phase identifi cation

• Determination of mechanical and structural material

parameter, e.g. Young modulus, Shear modulus, tear-off

forces, elastic-plastic transition etc.

• Draw, shear, strain and pressure testing, also combined

with thermal loads

• Shock and vibration tests for MEMS

• Pull- und Shear tests (wire bonds, solder balls,…)

• Solder paste qualifi cation

SEM: Small Si bumps

5 µm

C=0.5C=1C=0.5, σγ = 20 MPaC=1, σγ = 30 MPa

Coffin&Manson ∆ε = 2∆α ∆T

Nf 5% VCE Tm=60˚CNf 5% VCE Tm=80˚CNf 5% VCE Tm=100˚Cpassive testsactive tests

Page 4: MODULE SERVICES: QUALITY AND RELIABILITY · 2019-12-02 · Non destructive analysis methods • Electrical characterization at wafer and module level (e.g., by automated wafer probing)

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Cross section of a

THT connector pin

Heat image of a defect coil Power module

Fraunhofer ISIT is participant of the

Development and Optimization of

Electronics and Assembly Concepts

• Electronics and system conception

(analog, digital, power electronics)

• Thermal design (simulation of the thermal management of

components, modules and assemblies)

• Thermo-mechanic simulation (static, transient)

• Modelling of thermomechanical loads due to material

incompatibilities (bending of laminates, creeping of solder)

• Modelling of cooling devices, e.g. geometry dimensioning

of air coolers and liquid coolers

• Evaluation of the effi ciency of cooling concepts

• Assessment of relevant features of manufacturing

quality and reliability

• Strain measurement (CTE mismatch) for

process qualifi cation

• Prototyping

Failure Analysis and material specifi c

evaluation of structures

• Analysis of thermo-mechanical behaviour

• Thermomechanical damage mechanisms at solder joints,

bond wire interconnects and material compounds

• Electrical overloads

• Electrostatic discharge (ESD)

• Cracks, contamination, corrosion, dendrites, whisker,

defects in conformal coating, delamination

• Dimensioning and positioning errors, component

counterfeits, 3D-SPI (solder paste inspection)

• Reconstruction of complex damage processes

• Evaluation of degradation

Module ServicesHelge SchimanskiPhone +49 (0) 4821 / [email protected]

Saskia SchröderPhone +49 (0) 4821 / [email protected]

C O N T A C T

Fraunhofer-Institute for

Silicon Technology ISITFraunhoferstraße 1D-25524 ItzehoePhone +49 (0) 4821 / 17-4222Fax +49 (0) 4821 / [email protected]