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MEMS Activities in μSIC and MEMS PC (μSIC MEMSPC におけるMEMS 活動) Masayoshi Esashi, Kentaro Totsu (江刺正喜、戸津健太郎) Micro System Integration Center (μSIC), Tohoku Univ. (東北大学 マイクロシステム融合研究開発センター(μSIC)) MEF2016 (2016/5/11) MEMS Park Consortium (MEMSPC) 1
45

MEMS Activities in μSI and MEMS P とMEMSPC におけるMEMS …s7c11b6c7849dc5e1.jimcontent.com/download/version/... · MEMS Seminar in Tokyo (Aug.22-24, 2012) 226 attendees MEMS

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Page 1: MEMS Activities in μSI and MEMS P とMEMSPC におけるMEMS …s7c11b6c7849dc5e1.jimcontent.com/download/version/... · MEMS Seminar in Tokyo (Aug.22-24, 2012) 226 attendees MEMS

MEMS Activities in μSIC and MEMS PC

(μSIC と MEMSPC におけるMEMS 活動)

Masayoshi Esashi, Kentaro Totsu(江刺正喜、戸津健太郎)

Micro System Integration Center (μSIC), Tohoku Univ.(東北大学マイクロシステム融合研究開発センター(μSIC))

MEF2016 (2016/5/11)

MEMS Park Consortium (MEMSPC)

1

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Future MEMS - Fusion with LSI -by M.Esashi and T.Ono (Morikita shuppan, 2016)

1. Heterogeneous integration (Fusion of MEMS and LSI)

2. Next generation mobile systems3. Sensor network and functional sensors4. Optical microsystems5. Biomedical microsystems6. Manufacturing and testing7. The way for improvement and effective

utilization (in Japanese)

Basics of MEMSBy M.Esashi (Morikita shuppan, 2009)

1. Introduction2. MEMS fabrication 3. MEMS elements 4. MEMS applications(in Japanese)

2

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3

(a) Surface micromachining (b) Assembly of packaged MEMS (c) Transfer of MEMS on LSI(Limitation of MEMS process) and LSI (Limitation in interconnection) (no limitation)

Heterogeneous integration

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4

DMD chip fabricated by surface micromachining

(L.J.Hornbeck : Micromachining and

Microfabrication'95 (SPIE) (1995) 3)

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Amorphous metal TiAl3 has been used for hinge since1992. Fatigue was solved by this ( >1×10 cycle).12

Life (hours)

5(Technical report in TI homepage)

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6

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7Heterogeneous integration by adhesive bonding

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8

(a) Film transfer (b) Device transfer (via-last) (c) Device transfer (via-first)

Wafer level transfer

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9

Conductive boron doped diamond (BDD) electrode array (20×20) on LSI for amperometric biosensor

(T.Hayasaka, S.Yoshida, K.Inoue, M.Nakano, T.Matsue, M.Esashi and S.Tanaka, J. of Microelectromechanical Systems, 24 (2015) 958-967)

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10

Diamond formation on a carrier wafer

Fabrication process

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11

Wide potential window

Screening of medicine for cancer cells

Diffusion of dropped histamine

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Fabrication process of tunable SAW filter using the selective transfer12

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(H.Hirano, T.Kimura, I.P.Koutsaroff, M.Kodato, K.Hashimoto, M.Esashi and S.Tanaka, J. of

Micromech. Microeng., 23 (2013) 025005)

Tunable SAW filter using ferroelectric varactor

13

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14

(a) Film transfer (b) Device transfer (via-last) (c) Device transfer (via-first)

Wafer level transfer

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15

PZT MEMS Switch on LSI

(Matsuo, Moriyama, Esashi, Tanaka, IEEE MEMS 2012, 1153-1156)

Displacement : 5μm / 10V

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Tactile sensor network for robot (event driven type)

2.4mm

16

(M.Makihata, M.Muroyama, Y.Nakano, S.Tanaka, T.Nakayama (Toyota Motor), U.Yamaguchi, H.Yamada, Y.Nonomura(Toyota Central Research Lab.), H.Funabashi, Y.Hata and M.Esashi, Transducers2013, 2729)

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Fabrication process of tactile sensor for network17

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18

Tactile sensor network(Collaborators, Toyota,

Toyota Central Res. Lab.)

(M.Muroyama, M.Makihata, M.Esashi et al., Smart Systems Integration (SSI) 2014)

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19

(S.Kobayashi & M.Esashi, Technical Digest of the 9th Sensor Symposium (1990) 137)

Common 2 wires tactile sensor array (polling type)

(1,000 Tr./chip in our lab., 1,000,000 (1M)Tr./chip in company, 10,000,000,000 (10B)Tr./chip now)

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20

(a) Film transfer (b) Device transfer (via-last) (c) Device transfer (via-first)

Wafer level transfer

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Multi SAW filters on LSI by selective transfer

(S. Tanaka, M. Yoshida, H. Hirano and M. Esashi, 2012 IEEE International UltrasonicsSymp. (2012) 1047) Characteristics of SAW filter and its phase noise 21

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(T.Samoto, H.Hirano, T.Somekawa, K.Hikichi, M.Fujita, M.Esashi and S.Tanaka, Transducers2013, 171 (2013))

Selective transfer process using laser debonding

22

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23

100×100 active

matrix nc-Si

emitter array

Concept of massive parallel electron beam exposure system using nc-Si emitter

Nano crystal (nc-) Si emitter

10 Tr. / wafer=10 times / 10 beams=10 times / 10 beams

12

8

6

4

6

410 beams

(M.Esashi, A.Kojima, N.Ikegami, H.Miyaguchi and N.Koshida, Microsystems & Nanoengi. , 1 (2015) 15029)

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24Nano crystaline (nc) Si emitter

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25Fabrication process of nc-Si emitter array with TSV

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100×100 active matrix electron source LSI pad layout in 430 pin package26

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27Driver circuit for 1 electron source

Q1 Q2

Q3 Q4 XRxEBdrv(to MEMS)

XRxHVpchg

RxE

na[

3]

RxE

na[

2]

RxE

na[

1]

RxE

na[

0]

D Q

ER

D Q

ER

D Q

ER

D Q

R

RxM

d[0

]R

xM

d[1

]

RxW

r

RxR

st

RxVL

RxEBoutG

RxVH

RxSRckout

RxSRdout

RxSRckin

RxSRdin

LT0

LT1

LT2

Md[1] Md[0] Wr

0 0 SR→LT0

0 1 SR→LT1

1 0 SR→LT2

SR

LT2 LT1

0 0 Ena0~HVpchg Electron Emission

0 1 Ena1~HVpchg Electron Emission

1 0 Ena2~HVpchg Electron Emission

1 1 Ena3~HVpchg Electron Emission

Rst = Vh → Reset SR/LT0-2 and level shifter

Level shifter5V → HV

Dis-i

Ena-iLvl Shft1.8→5V

Lvl Shft1.8→5V

(Open Drain)

Emission off : SR = H、XRxEBdrv = H、RxEBoutG = Hi-Z

Emission on : SR = L、XRxEBdrv = L、RxEBoutG = H

High VoltageTransistor

Low VoltageTransistor

5V

HVtransistorinverter

5Vtransistorinverter

1.8V

HVpchg

Ena

Out

XX

XO

XX

Q4Q2

Variable exposure time Emission off

OX

XX

OX

XX

OX

XX

Hi-Z

Hi-Z

Hi-Z Hi-Z

10

0%

90

%

80

%

70

%

XX

Hi-Z

TrOn/Off

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Exposed patter on a resist using 1:1 projection system with 15×15 planer type nc-Sielectron source (Electron source pattern is superimposed in the right photograph)

28

1/100 and 1/1 exposure test set-up

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29

Shared facility for industry to prototype MEMS devices (4 / 6 inch)

Hands-on-access fab. (Nishizawa memorial research center in Tohoku Univ.)

Contact person : Assoc. Prof. Kentaro Totsu [email protected]

Companies which can not

prepare their own facility

dispatch their employees to

operate equipments by

themselves for development

and small volume production.

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30

Nishizawa memorial

research center

Users of the Hands-on-access fab.

Users : 180 companies

70% of running cost

(1.7M$) is covered by

charge in 2015

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Revenue and expenditure (FY2015)

Users fee126M(+8%)69% of the total revenue

MEXTNanotechnologyPlatform Project45M

Facilitymaintenance7M

Travel 1MProject, etc. 12M

Revenue Expenditurethe others 2M

Equipmentinstallation16M

Total : JPY 183 MUSD 1.7 M

Personnel55M

Air conditioningheating, lighting48M

Expendables24M

Equipmentmaintenance14M

Facility charge16M

31

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Hands-on-access fab. users (~180 companies)

MiyagiKuramotoFurukawa NDKSmart SolarMGRIKENMems CoreAdvantestICR

TechnofineRicohAbelieveNakatani SangyoPacal Technologies Japan

MitsumaruPhotonic LatticeDexerialsIndustrial Technology Institute,

Miyagi Pref.Tohoku Institute of Technology

RS TechnologiesKami Electronic IndustryMaterial Concept

SonyAlps ElectricTohoku Univ.

IbaraikiRicoh Printing SystemsEUVL

JAEAJAXAtei solutions

FukushimaEMC SemiconductorMunekataAGC ElectronicsNihon Univ.

Maruwa QuartzFukushima SankenJSTFukushima Technology Centre

HokkaidoKyosemiFine Crystal

AkitaAkita Epson

YamagataChinoMitsumiYamagata Univ.Yamagata Research Institute Of Technology

Tsuruoka NTCAhiko Fine Tech

ChibaFurukawa ElectricTDKYoutec

Maruzen PetrochemicalSeiko Instruments

TokyoTakionInfinity Storage Media

BN TechnologyYuka IndustriesMD InnovationsNamiki Precision Jewel

Univ. of TokyoBEANS LaboratoryRionASETYokogawa ElectricNanox JapanOji Holdings

Konica MinoltaAdamantTokyo Metropolitan Univ.Fuji ElectricTokyo Univ. of Agriculture and Technology

KanagawaNTT-ATTokyo Polytechnic Univ.JVC Kenwood

Suss Micro TechM.T.CNLT TechnologiesKyodo International

NICTToshibaKeio Univ.Fujitsu Laboratories

ShizuokaHamamatsu PhotonicsMerckShizuoka Univ.Yazaki

AichiNGKNagoya Institute of Technology

CKDToyota Tsusho ElectronicsNagoya Univ.

NiigataInstitute of Niigata Pref.

Niigata Univ.

GunmaTaiyo YudenShin-Etsu

FukuokaKyusyu Univ.

HyogoSumitomo Precision ProductsYamamoto Electric WorksUniv. of Hyogo

OsakaSumitomo Electric Industry

PanasonicOsaka Univ.

ShigaRitsumeikanUniv.Toray Research CenterOmron

KyotoTecdiaKyocera

Kyoto Univ.

ToyamaHokuriku Electric Industry

IwateLightomFTC Corporation

Iwate Univ.Ricoh Optical

TochigiKeihin

KagawaAoi Electronics

SaitamaNippon SignalWacom

LintecRiken Keiki

KoreaSamsung

SingaporeInstitute of Microelectronics (IME)

Overseas

NaganoSeiko EpsonNagano KeikiShinsyu Univ.

AomoriAomori Pref. Industrial Technology Research Center

TottoriTottori Univ.

MieToho Engineering

YamaguchiTosoh SGM

YamanashiHOYA

32

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Layout of the Hands-on access fab. for 4/6 inch wafer

Used for power

transistor

production until

2008

Succeeded

by Univ

Newly

Installed

Donated by

industry

Transferred

from 0ther

lab

Companies are allowed to sell MEMS devices produced in the fab.

33

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FhG Germany – Sendai city partnership

signing ceremony in Munich (July15,2005)

FhG Germany – WPI-AIMR Tohoku Univ.

partnership signing ceremony in Sendai

(Nov. 8, 2011)

FhG Project center in WPI-AIMR, Tohoku

Univ. (April 1, 2012)

Collaboration with FhG

(Fraunhofer Institute) in

Germany

1st Fraunhofer Symposium in Sendai “Doing Worldwide Business via MEMS technology” (Oct.19, 2005)10st Fraunhofer Symposium in Sendai (Nov.26, 2015)

34

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Signing ceremony (2012/6/11)

Strategic PartnerTohoku U Stanford U EPFL

Tohoku U

Stanford U“your lab and imec are very

complimentary” Rudy Lauwereins,

Vice-President of IMEC

35

2012/6/21 Seminar at IMEC 2013/11/8 Seminar in Sendai 2014/11/12 Seminar at IMEC

(IMEC M.Yoneyama 2012/6/12)

2015/11/12 Seminar in Sendai

Collaboration with IMEC

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36

Sendai MEMS showroom (MEMS Park Consortium (MEMSPC))

Efficient way to access accumulated knowledge

is important for heterogeneous integrationCatalog

http://www.mu-sic.tohoku.ac.jp/showroom/index.html (Japanese)

http://www.mu-sic.tohoku.ac.jp/showroom_e/index.html (English)

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37

Show room for new achievement (2016 -)

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A0 OverviewA1 Electrical measurement : GalvanometerA2 Wired communication : Carbon microphoneA3 Wireless communication : Vacuum tube radioB1 Recording : Phonograph (Edison), Tape recorderB2 Computer (1) (Digital) : Mechanical computerB3 Computer (1) (Analog) : Calculation scaleC1 Vacuum tube : Various vacuum tubesC2 Transistor・IC : From vacuum tube to transistorC3 Haggerty’s forecast (1964)C4 Large size vacuum tube for transmitterC5 Vacuum tube during the 2nd world warC6 Mercury rectifier and thyratronD1 Optical instruments (1) Measurement D2 Optical instruments (2) Camera E1 Hobby (1) (Robot) : Mechanical doll, Aibo, ManoiE2 Hobby (2) (Car, Hericopter) : Micro flying robotE3 Automobile : Model T Ford、Model A Ford manualF1 Fountain penF2 Illumination and lighterF3 Measure gause : Balance, ThermometerF4 Clock : Motor clock, tuning-fork clockF5 Typewriter : Portable typewriterG Kiyota MagfacturingH Books on the history of technology、I Tohoku Univ. ,companies

Historical Museum of Technology(近代技術史博物館) http://www.mu-sic.tohoku.ac.jp/museumE/index.html (English) 38

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Historical Museum of Technology (近代技術史博物館) 39

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40

MEMS Seminar in Tokyo (Aug. 23-25, 2006) 280 attendees

MEMS Seminar in Sendai (Aug. 22-24, 2007) 75 attendees

MEMS Seminar in Fukuoka (Aug.20-22, 2008) 150 attendees

MEMS Seminar in Nagoya (Aug.4-6, 2009) 100 attendees

MEMS Seminar in Tsukuba (Aug.5-7, 2010) 211 attendees

MEMS Seminar in Kyoto (Aug.9-11, 2011) 175 attendees

MEMS Seminar in Tokyo (Aug.22-24, 2012) 226 attendees

MEMS Seminar in Tsukuba Univ.(Aug.7-9,2 013) 110 attendees

MEMS Seminar in Osaka (Aug.5-7, 2014) 140 attendees

MEMS Seminar in Toyohashi (Aug.5-7, 2015) 161 attendees

MEMS Seminar in Sendai (Aug.3-5, 2016)

Free MEMS seminar by MEMSPC

(http://www.memspc.jp)

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41

MEMS Training Program in Sendai MEMS PCSince Apr.2007. Fee 1 million yen. Trainee participate with own subject. 16 companies participated.

Planning,design

Fabrication(4 inch process)

TestingPresentation,

report

10 ~ 20 d 30 ~ 60 d ~ 10 d 3 d

Lectures on Internet School

of Tohoku University

3 months

DesignEx. Capacitive 3-axis accelerometerTraining of Fabrication

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MEMS core Co.Ltd.

(Contract development)

Advantest component Co.Ltd.

(Contract production)

Micro System Integration Center

(Tohoku Univ.) (Hands-on access fab.) Faculty of Eng. (Tohoku Univ.)

(Initial stage prototyping)

MEMS Park

Consortium

(MEMSPC)

42

Company

Open collaboration by MEMSPC in Sendai

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43iCAN (International Contest of Application in

Nano / micro technologies)5th contest (iCAN‘14) in Sendai (July, 19-22, 2014)

Pro ROBO (Robot to protect the home safety) winnerFukushima pref. Koriyama-kita technical high school

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TEMS (Talking Equipment from Manual Sign)iCAN’11 winner, Kyoto Univ.

44Anywhere SADOU, iCAN’15 winner, Tohoku Univ., Osaka Univ. Demonstration in CES (Consumer Electronics Show)

in Lasvegus (Jan. 7, 2016)

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45Prof. Shuji Tanaka Assos.Prof. Masanori Muroyama Assis.Prof. Shinya Yoshida

(Hetero integration) (Tactile sensor network) (Diamond electrode array)

Acknowledgment to collaborators

Summary

Activities in μSIC

Heterogeneous integration by wafer level transfer

(Diamond electrode array on LSI, Tunable SAW filter, PZT MEMS switch on LSI,

Tactile sensor network, Multi SAW filters on LSI, Massive parallel EB exposure system)

Filter for EUV

Hands-on access fabrication facility

Activities in MEMSPC

International collaboration (Fhg.(Germany), IMEC (Bergium))

Sendai MEMS showroom and historical museum of technology

MEMS seminar and MEMS training program

Open collaboration in Sendai area

iCAN