Introduction to CMOS VLSI Design Nonideal Transistors.

Introduction toCMOS VLSI

Design

Nonideal Transistors

2CMOS VLSI Design

Outline Transistor I-V Review Nonideal Transistor Behavior

– Velocity Saturation– Channel Length Modulation– Body Effect– Leakage– Temperature Sensitivity

Process and Environmental Variations– Process Corners

3CMOS VLSI Design

Ideal Transistor I-V Shockley 1st order transistor models

2

cutoff

linear

saturatio

0

2

2n

gs t

dsds gs t ds ds dsat

gs t ds dsat

V V

VI V V V V V

V V V V

Vdsat = Vgs - Vt

4CMOS VLSI Design

Ideal nMOS I-V Plot 180 nm TSMC process

Ideal Models– = 155(W/L) A/V2

– Vt = 0.4 V

– VDD = 1.8 V

Ids (A)

Vds0 0.3 0.6 0.9 1.2 1.5 1.8

100

200

300

400

Vgs = 0.6

Vgs = 0.9

Vgs = 1.2

Vgs = 1.5

Vgs = 1.8

0

= nCox(W/L)

5CMOS VLSI Design

Simulated nMOS I-V Plot 180 nm TSMC process BSIM 3v3 SPICE models

– very elaborate model derived from the underlying device physics

What differs?

Vds

0 0.3 0.6 0.9 1.2 1.5

Vgs = 1.8

Ids (A)

0

50

100

150

200

250

Vgs = 1.5

Vgs = 1.2

Vgs = 0.9

Vgs = 0.6

Berkeley Short-Channel IGFET Model (BSIM)

6CMOS VLSI Design

Simulated nMOS I-V Plot 180 nm TSMC process BSIM 3v3 SPICE models What differs?

– Less ON current– No square law– Current increases

in saturation

Vds

0 0.3 0.6 0.9 1.2 1.5

Vgs = 1.8

Ids (A)

0

50

100

150

200

250

Vgs = 1.5

Vgs = 1.2

Vgs = 0.9

Vgs = 0.6

7CMOS VLSI Design

Velocity Saturation We assumed carrier velocity is proportional to E-field

– v = Elat = Vds/L

At high fields, this ceases to be true– Carriers scatter off atoms

– Velocity reaches vsat

• Electrons: 6-10 x 106 cm/s• Holes: 4-8 x 106 cm/s

– Better model

Esat00

slope =

Elat

2Esat3Esat

sat

sat / 2

latsat sat

lat

sat

μμ

1

Ev v E

EE

8CMOS VLSI Design

Velocity Sat I-V Effects Ideal transistor ON current increases with V2

Velocity-saturated ON current increases with V

Real transistors are partially velocity saturated– Approximate with -power law model

– Ids V

– 1 < < 2 determined empirically

2

2

ox 2 2gs t

ds gs t

V VWI C V V

L

ox maxds gs tI C W V V v

9CMOS VLSI Design

-Power Model

Ids (A)

Vds0 0.3 0.6 0.9 1.2 1.5 1.8

100

200

300

400

Vgs = 0.6

Vgs = 0.9

Vgs = 1.2

Vgs = 1.5

Vgs = 1.8

0

-lawSimulated

Shockley

0 cutoff

linear

saturation

gs t

dsds dsat ds dsat

dsat

dsat ds dsat

V V

VI I V V

V

I V V

/ 2

2dsat c gs t

dsat v gs t

I P V V

V P V V

10CMOS VLSI Design

Channel Length Modulation Reverse-biased p-n junctions form a depletion region

– Region between n and p with no carriers

– Width of depletion Ld region grows with reverse bias

– Leff = L – Ld

Shorter Leff gives more current

– Ids increases with Vds

– Even in saturation n+

p

GateSource Drain

bulk Si

n+

VDDGND VDD

GND

LLeff

Depletion RegionWidth: Ld

11CMOS VLSI Design

Chan Length Mod I-V

= channel length modulation coefficient– not feature size– Empirically fit to I-V characteristics

21

2ds gs t dsI V V V

Ids (A)

Vds0 0.3 0.6 0.9 1.2 1.5 1.8

100

200

300

400

Vgs = 0.6Vgs = 0.9

Vgs = 1.2

Vgs = 1.5

Vgs = 1.8

0

12CMOS VLSI Design

Body Effect Vt: gate voltage necessary to invert channel

Increases if source voltage increases because source is connected to the channel

Increase in Vt with Vs is called the body effect

13CMOS VLSI Design

Body Effect Model

s = surface potential at threshold

– Depends on doping level NA

– And intrinsic carrier concentration ni

= body effect coefficient

0t t s sb sV V V

2 ln As T

i

Nv

n

sioxsi

ox ox

2q2q A

A

NtN

C

14CMOS VLSI Design

OFF Transistor Behavior What about current in cutoff? Simulated results What differs?

– Current doesn’t go

to 0 in cutoff

Vt

Sub-threshold

Slope

Sub-thresholdRegion

SaturationRegion

Vds = 1.8

Ids

Vgs

0 0.3 0.6 0.9 1.2 1.5 1.8

10 pA

100 pA

1 nA

10 nA

100 nA

1 A

10 A

100 A

1 mA

15CMOS VLSI Design

Leakage Sources Subthreshold conduction

– Transistors can’t abruptly turn ON or OFF Junction leakage

– Reverse-biased PN junction diode current Gate leakage

– Tunneling through ultra-thin gate dielectric

Subthreshold leakage is the biggest source in modern transistors

16CMOS VLSI Design

Subthreshold Leakage Subthreshold leakage exponential with Vgs

n is process dependent, typically 1.4-1.5

0e 1 egs t ds

T T

V V V

nv vds dsI I

2 1.80 eds TI v

17CMOS VLSI Design

DIBL Drain-Induced Barrier Lowering

– Drain voltage also affect Vt

– High drain voltage causes subthreshold leakage to ________.

ttdsVVVt t dsV V V

18CMOS VLSI Design

DIBL Drain-Induced Barrier Lowering

– Drain voltage also affect Vt

– High drain voltage causes subthreshold leakage to increase.

ttdsVVVt t dsV V V

19CMOS VLSI Design

Junction Leakage Reverse-biased p-n junctions have some leakage

Is depends on doping levels

– And area and perimeter of diffusion regions– Typically < 1 fA/m2

e 1D

T

V

vD SI I

n well

n+n+ n+p+p+p+

p substrate

20CMOS VLSI Design

Gate Leakage Carriers may tunnel thorough very thin gate oxides Predicted tunneling current (from [Song01])

Negligible for older processes May soon be critically important VDD

0 0.3 0.6 0.9 1.2 1.5 1.8

J G (

A/c

m2)

10-9

10-6

10-3

100

103

106

109

tox

0.6 nm0.8 nm

1.0 nm1.2 nm

1.5 nm

1.9 nm

VDD trend

21CMOS VLSI Design

Temperature Sensitivity Increasing temperature

– Reduces mobility

– Reduces Vt

ION ___________ with temperature

IOFF ___________ with temperature

22CMOS VLSI Design

Temperature Sensitivity Increasing temperature

– Reduces mobility

– Reduces Vt

ION decreases with temperature

IOFF increases with temperature

Vgs

dsI

increasingtemperature

23CMOS VLSI Design

So What? So what if transistors are not ideal?

– They still behave like switches. But these effects matter for…

– Supply voltage choice– Logical effort– Quiescent power consumption– Pass transistors– Temperature of operation

24CMOS VLSI Design

Parameter Variation Transistors have uncertainty in parameters

– Process: Leff, Vt, tox of nMOS and pMOS

– Vary around typical (T) values Fast (F)

– Leff: ______

– Vt: ______

– tox: ______

Slow (S): opposite Not all parameters are independent

for nMOS and pMOS

nMOS

pM

OS

fastslow

slow

fast

TT

FF

SS

FS

SF

25CMOS VLSI Design

Parameter Variation Transistors have uncertainty in parameters

– Process: Leff, Vt, tox of nMOS and pMOS

– Vary around typical (T) values Fast (F)

– Leff: short

– Vt: low

– tox: thin

Slow (S): opposite Not all parameters are independent

for nMOS and pMOS

nMOS

pM

OS

fastslow

slow

fast

TT

FF

SS

FS

SF

26CMOS VLSI Design

Environmental Variation VDD and T also vary in time and space

Fast:

– VDD: ____

– T: ____

Corner Voltage Temperature

F

T 1.8 70 C

S

27CMOS VLSI Design

Environmental Variation VDD and T also vary in time and space

Fast:

– VDD: high

– T: low

Corner Voltage Temperature

F 1.98 0 C

T 1.8 70 C

S 1.62 125 C

28CMOS VLSI Design

Process Corners Process corners describe worst case variations

– If a design works in all corners, it will probably work for any variation.

Describe corner with four letters (T, F, S)– nMOS speed– pMOS speed– Voltage– Temperature

29CMOS VLSI Design

Important Corners Some critical simulation corners include

Purpose nMOS pMOS VDD Temp

Cycle time

Power

Subthreshold

leakage

Pseudo-nMOS

30CMOS VLSI Design

Important Corners Some critical simulation corners include

Purpose nMOS pMOS VDD Temp

Cycle time, timimg specification. conservative

S S S S

Power,DC power comsumption, race conditions,etc

F F F F

Subthreshold

leakage, noise analysis

F F F S

Pseudo-nMOS and ratioed circuits

S F F F