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MRF5S21045NR1 MRF5S21045NBR1
1RF Device DataFreescale Semiconductor
RF Power Field Effect TransistorsN--Channel Enhancement--Mode Lateral MOSFETsDesigned for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.To be used in Class AB for PCN--PCS/cellular radio and WLL applications.
• Typical 2--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 500 mA,Pout = 10 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz,PAR = 8.5 dB @ 0.01% Probability on CCDF.Power Gain 14.5 dBDrain Efficiency 25.5%IM3 @ 10 MHz Offset --37 dBc in 3.84 MHz Channel BandwidthACPR @ 5 MHz Offset --39 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 45 Watts CWOutput Power
Features• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use• Qualified Up to a Maximum of 32 VDD Operation• Integrated ESD Protection• 200°C Capable Plastic Package• N Suffix Indicates Lead--Free Terminations. RoHS Compliant.• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +68 Vdc
Gate--Source Voltage VGS --0.5, +15 Vdc
Total Device Dissipation @ TC = 25°CDerate above 25°C
PD 1300.74
WW/°C
Storage Temperature Range Tstg -- 65 to +150 °C
Operating Junction Temperature TJ 200 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value (1,2) Unit
Thermal Resistance, Junction to CaseCase Temperature 80°C, 45 W CWCase Temperature 79°C, 10 W CW
RθJC1.351.48
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTFcalculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.Select Documentation/Application Notes -- AN1955.
Figure 1. MRF5S21045NR1(NBR1) Test Circuit Schematic
Z7 0.500″ x 1.000″ MicrostripZ8, Z13 0.270″ x 0.080″ MicrostripZ10 0.789″ x 0.080″ MicrostripZ11 0.527″ x 0.080″ MicrostripZ12 0.179″ x 0.080″ MicrostripPCB Taconic TLX8--0300, 0.030″, εr = 2.55
Z1, Z9 0.250″ x 0.080″ MicrostripZ2 0.987″ x 0.080″ MicrostripZ3 0.157″ x 0.080″ MicrostripZ4 0.375″ x 0.080″ MicrostripZ5 0.480″ x 1.000″ MicrostripZ6 0.510″ x 0.080″ Microstrip
C2C1R2
VBIASVSUPPLY
C6C5C4
C8 C9 C10
C3
C13
C7
RFOUTPUT
RFINPUT
R1
Z1 Z2 Z3 Z4 Z5
Z6
Z13
Z8
Z7 Z12 Z11 Z9
+
DUT
R3
C11
Z10
C12
C15C14
Table 6. MRF5S21045NR1(NBR1) Test Circuit Component Designations and ValuesPart Description Part Number Manufacturer
Figure 12. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated tobetter than ±10% of the theoretical prediction for metal failure. DivideMTTF factor by ID2 for MTTF in a particular application.
108
107
106
110 130 160 180 200
MTTFFACTOR(HOURSxAM
PS2 )
100 120 140 150 170 190
W--CDMA TEST SIGNAL
100.0001
100
0
PEAK--TO--AVERAGE (dB)
Figure 13. CCDF W--CDMA 3GPP, Test Model 1,64 DPCH, 67% Clipping, Single--Carrier Test Signal
10
1
0.1
0.01
0.001
2 4 6 8
Figure 14. 2-Carrier W-CDMA Spectrum
f, FREQUENCY (MHz)
3.84 MHzChannel BW
--IM3 in3.84 MHz BW
+IM3 in3.84 MHz BW
--ACPR in3.84 MHz BW
+ACPR in3.84 MHz BW
PROBABILITY
(%)
(dB)
+20
+30
0
--10
--40
--50
--60
--70
--80
--20
205 15100--5--10--15--20--25 25
--30W--CDMA. ACPR Measured in 3.84 MHz ChannelBandwidth @±5 MHz Offset. IM3 Measured in3.84 MHz Bandwidth @±10 MHz Offset. PAR =8.5 dB @ 0.01% Probability on CCDF
Refer to the following documents to aid your design process.
Application Notes• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
4 Oct. 2008 • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notificationnumber, PCN12779, p. 1, 2
• Updated Part Numbers in Table 6, Component Designations and Values, to latest RoHS compliant partnumbers, p. 3
• Replaced Case Outline 1486--03, Issue C, with 1486--03, Issue D, p. 9--11. Added pin numbers 1 through 4on Sheet 1.
• Replaced Case Outline 1484--04, Issue D, with 1484--04, Issue E, p. 12--14. Added pin numbers 1 through4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations.
• Added Product Documentation and Revision History, p. 15
4.1 Dec. 2009 • Corrected data sheet to reflect RF Test Reduction frequency described in Product and Process ChangeNotification number, PCN12779, p. 2
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Document Number: MRF5S21045NRev. 4.1, 12/2009
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