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MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
1RF Device DataFreescale Semiconductor
RF LDMOS Wideband Integrated Power Amplifiers
The MW7IC2725N wideband integrated circuit is designed with on- chipmatching that makes it usable from 2300- 2700 MHz. This multi- stagestructure is rated for 26 to 32 Volt operation and covers all typical cellularbase station modulation formats.• Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 77 mA, IDQ2 = 275 mA,
Pout = 4 Watts Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4,4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%Probability on CCDF.�Power Gain — 28.5 dB�Power Added Efficiency — 17%�Device Output Signal PAR — 9 dB @ 0.01% Probability on CCDF�ACPR @ 8.5 MHz Offset — -50 dBc in 1 MHz Channel Bandwidth
Pout = 26 dBm Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4,4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%Probability on CCDF.�Power Gain — 27.8 dB�Power Added Efficiency — 3.2%�Device Output Signal PAR — 9 dB @ 0.01% Probability on CCDF�ACPR @ 8.5 MHz Offset — -56 dBc in 1 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 40 Watts CWOutput Power (3 dB Input Overdrive from Rated Pout)
• Stable into a 5:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 5 W CWPout
• Typical Pout @ 1 dB Compression Point � 25 Watts CWFeatures• 100% PAR Tested for Guaranteed Output Power Capability• Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source S-Parameters• On-Chip Matching (50 Ohm Input, DC Blocked)• Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
• Integrated ESD Protection• 225°C Capable Plastic Package• RoHS Compliant• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
��1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent CurrentControl for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977or AN1987.
MW7IC2725NR1MW7IC2725GNR1MW7IC2725NBR1
2500-2700 MHz, 4 W AVG., 28 VWiMAX
RF LDMOS WIDEBANDINTEGRATED POWER AMPLIFIERS
CASE 1886-01TO-270 WB-16
PLASTICMW7IC2725NR1
CASE 1887-01TO-270 WB-16 GULL
PLASTICMW7IC2725GNR1
CASE 1329-09TO-272 WB-16
PLASTICMW7IC2725NBR1
Document Number: MW7IC2725NRev. 3, 1/2010
Freescale SemiconductorTechnical Data
Figure 1. Functional Block Diagram
Quiescent CurrentTemperature Compensation (1)
VDS1
RFin
VGS1
RFout/VDS2
VGS2
VDS1(Top View)
Figure 2. Pin Connections
Note: Exposed backside of the package isthe source terminal for the transistors.
��1. Continuous use at maximum temperature will affect MTTF.��2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.��3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
IMD Symmetry @ 27 W PEP, Pout where IMD Third OrderIntermodulation � 30 dBc(Delta IMD Third Order Intermodulation between Upper and LowerSidebands > 2 dB)
IMDsym— 50 —
MHz
VBW Resonance Point(IMD Third Order Intermodulation Inflection Point)
VBWres — 90 — MHz
Gain Flatness in 200 MHz Bandwidth @ Pout = 4 W Avg. GF — 0.5 — dB
Average Deviation from Linear Phase in 200 MHz Bandwidth @ Pout = 25 W CW
Φ — 2.1 — °
Average Group Delay @ Pout = 25 W CW, f = 2600 MHz Delay — 2.3 — ns
Part-to-Part Insertion Phase Variation @ Pout = 25 W CW, f = 2600 MHz, Six Sigma Window
ΔΦ — 22 — °
Gain Variation over Temperature(-30 °C to +85°C)
ΔG — 0.036 — dB/°C
Output Power Variation over Temperature(-30 °C to +85°C)
ΔP1dB — 0.003 — dBm/°C
Typical Driver Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 26 dBm Avg.,f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probabilityon CCDF. ACPR measured in 1 MHz Channel Bandwidth @ ±8.5 MHz Offset.
Power Gain Gps — 27.8 — dB
Power Added Efficiency PAE — 3.2 — %
Output Peak-to-Average Ratio @ 0.01% Probability on CCDF PAR — 9 — dB
Adjacent Channel Power Ratio ACPR — -56 — dBc
Input Return Loss IRL — -13 — dB
Relative Constellation Error @ Pout = 1.25 W Avg. (1) RCE — -40 — dB
��1. RCE = 20Log(EVM/100)
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
5RF Device DataFreescale Semiconductor
Figure 3. MW7IC2725NR1(GNR1)(NBR1) Test Circuit Schematic
Z9 0.040″ x 0.061″ MicrostripZ10 0.020″ x 0.050″ MicrostripZ11 0.050″ x 0.050″ MicrostripZ12 0.050″ x 0.027″ MicrostripZ13* 0.338″ x 0.020″ MicrostripZ14 1.551″ x 0.027″ Microstrip PCB Rogers R04350B, 0.0133″, εr = 3.48
* Line length includes microstrip bends
Z1 0.500″ x 0.027″ MicrostripZ2 0.075″ x 0.127″ Microstrip Z3 1.640″ x 0.027″ Microstrip Z4 0.100″ x 0.042″ MicrostripZ5 0.151″ x 0.268″ MicrostripZ6 0.025″ x 0.268″ x 0.056″ TaperZ7 0.050″ x 0.056″ MicrostripZ8 0.356″ x 0.056″ Microstrip
Z2
RFINPUT
VG1
Z5
RFOUTPUT
C11
1
2
3
4
5
6
7
8
14
13
1211
10
9
15
16
NC
NC
NC
DUT
Z3
VDD1
Quiescent CurrentTemperature
Compensation
Z1
NC
Z7 Z11
C10
NC
NC
Z8 Z10Z9
C7
C8
C9
C17
Z4
C6
C5
C4
R4 R5 R6
C3
C2
C1
R1 R2 R3
VG2
NC
NC
NC
NC
Z6
VD2
C13
C14
C15
C16
28 VB1
Z13
Z12 Z14
C12
Table 6. MW7IC2725NR1(GNR1)(NBR1) Test Circuit Component Designations and ValuesPart Description Part Number Manufacturer
B1 47 Ω, 100 MHz Short Ferrite Bead 2743019447 Fair-Rite
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
42
48
44
46
17 18
34
3 19
Test Impedances per Compression Level
ZsourceΩ
ZloadΩ
P1dB 39.5 - j8.7 3.53 - j1.66
Figure 18. Pulsed CW Output Power versus Input Power @ 28 V @ 2700 MHz
14RF Device Data
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PACKAGE DIMENSIONS
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PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
• AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages
• AN3789: Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages
Engineering Bulletins• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software• Electromigration MTTF Calculator
• RF High Power Model
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to theSoftware & Tools tab on the part's Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0 June 2008 • Initial Release of Data Sheet
1 July 2008 • Added MW7IC2725NBR1 device and corresponding case outline information to data sheet.
2 Oct. 2008 • Added Fig. 13, MTTF versus Junction Temperature, p. 9
3 Jan. 2010 • Modified VSWR rating to show the 3 dB overdrive capability, p. 1
• Maximum Ratings table: Added Case Operating Temperature and set limit to 150°C. Corrected maximuminput power level to the tested value from 20 dBm to 22 dBm, p. 2
• Added AN3789, Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages toProduct Documentation, Application Notes, p. 23
24RF Device Data
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MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
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