3d transistor

3D TRANSISTOR

ByRuchira Shivsharan

INDEXIntroduction

Moore’s law

Types of Multigate Transistor

Planar double gate transistor

FlexFET

FinFET

Tri-Gate transistor

Gate all around FET

3D transistor symbol and pin function

Difference between planar and 3d transistor

Key points

3D tri-gate transistor benefits

Fun Facts

Application

IntroductionTri-Gate transistors, the first to be truly three-dimensional,

mark a major revolution in the Semiconductor industry. The

semiconductor industry continues to push technological

innovation to keep pace with Moore’s Law, shrinking

transistors so that ever more can be packed on a chip.

However, at future technology nodes, the ability to shrink

transistors becomes more and more problematic, in part

due to worsening short channel effects and an increase in

parasitic leakages with scaling of the gate-length

dimension. In this regard Tri-gate transistor architecture

makes it possible to continue Moore’s law at 22nm and

below without a major transistor redesign. The physics,

technology and the advantages of the device is briefly

discussed in this paper.

“”THE NUMBER OF TRANSISTORS

INCORPORATED IN A CHIP WILL

APPROXIMATELY DOUBLE EVERY 24 MONTHS.“

—

GORDON MOORE

Types of Multigate Transistor

Planar double-gate transistor

Flexfet

FinFET

Tri-gate transistor

Gate-all-around (GAA) FET

Flexfet

Highly scalable due to its sub-lithographic channel length.

Top gate MOSFET

Bottom gate JFET

The top and bottom gates provide transistor operation.

The top gate operation affects the bottom gate operation

and vice versa.

Flexfet was developed, and is manufactured, by American

Semiconductor.

FinFET Based on the earlier DELTA (single-gate)

transistor design.

The conducting channel is wrapped by a thin

silicon "fin”.

The thickness of the fin determines the

effective channel length of the device.

The Wrap-around gate structure provides a

better electrical control over the channel .

Helps in reducing the leakage current and

overcoming other short channel effects.

Gate-all-around (GAA) FET

The gate material surrounds the channel region on all

sides.

Gate-all-around FETs can have two or four effective gates.

Gate-all-around FETs have been successfully built around

a silicon nanowire. and etched InGaAs nanowires

 Tri-gate transistor Reduction in power dissipatio

n

Increased pathway

for electrical signals

Drives 20% more

current than

traditional planar

transistors

High switching

speed

High performance with reduced

size

Better control

over leakage current

due to 3D structure

Moore’s law

Wrap around channel

suppression of "off-

state" leakage current

enhanced current in

the "on" state

Multigate device symbol and pin function

Also called as multigate

device or multiple gate field-effect 

transistor (MuGFET) refers to a MOSFET 

incorporates more than one gate into a

single device. The multiple gates may be

controlled by a single gate electrode,

in the multiple gate surfaces act electrically

as a single gate, or by independent gate

electrodes.

Key Points

•Intel is introducing revolutionary Tri-Gate transistors on its 22 nm

logic technology

•Tri-Gate transistors provide an unprecedented combination of

improved performance and energy efficiency

•22 nm processors using Tri-Gate transistors, code-named Ivy Bridge,

are now demonstrated working in systems

•Intel is on track for 22 nm production in 2H ‘11, maintaining a 2-year

cadence for introducing new technology generations

•This technological breakthrough is the result of Intel’s highly

coordinated research-development-manufacturing pipeline

•Tri-Gate transistors are an important innovation needed to continue

Moore’s Law

•The original transistor built by Bell Labs in 1947 was large enough that it was pieced together by hand. By contrast, more than 100 million 22nm tri-gate transistors could fit onto the head of a pin.

•More than 6 million 22nm tri-gate transistors could fit in the period

•A 22nm tri-gate transistor's gates that are so small, you could fit more than 4000 of them across the width of a human hair.

•If a typical house shrunk as transistors have, you would not be able to see a house without a microscope. To see a 22nm feature with the naked eye, you would have to enlarge a chip to be larger than a house.

•Compared to Intel's first microprocessor, the 4004, introduced in 1971, a 22nm CPU runs over 4000 times as fast and each transistor uses about 5000 times less energy. The price per transistor has dropped by a factor of about 50,000.

•A 22nm transistor can switch on and off well over 100 billion times in one second. It would take you around 2000 years to flick a light switch on and off that many times.

FUN FACTS: EXACTLY HOW SMALL (AND COOL) IS 22 NANOMETERS?

The shorter the gate, the faster the computer can

operate. While the new 3D transistors will have a gate

length of 22 nanometers

Application

Computers implementing 3D silicon transistors will not

only be able to run faster, but should also weigh less, and

generate less heat than their present-day flat-transistor-

using counterparts.

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