Transcript
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DEPT. OF ELECTRONICS & COMMUNICATION
Experiment No: 1
STUDY OF CATHODE RAY OSCILLOSCOPE
AIM: To study the operation of CRO and its applications.
APPARATUS:
1. Cathode Ray Oscilloscope2. CRO Probes3. Function Generator4. Resistor, Capacitor, PN Diode, Zener Diode, Transistor.
CIRCUIT DIAGRAM:
FRONT PANNEL CONTROLS:
1. Power ON : Put the instrument to main supply with LEDindication.
2. INTENSITY : The brightness of the display.3. FOCUS : Controls the sharpness of the display.4. TIME BASE : 18 steps to enable selection of
18 Calibrated sweep from 0.5uSec/div to0.2Sec/div in 1, 2, 5 Sequence.
5. TIME BASE : In calibrated position the selectedVARIABLE Sweep speed holds indicated
Calibration clockwise, it extends theSweep sipped by 2.5times approx.with LED indication.
6. POSITION : Controls the horizontal position of the
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DEPT. OF ELECTRONICS & COMMUNICATION
Display. When this control is pulled itmagnifies the sweep 5 times, with LEDindication.
7. LEVEL : Variable control, selects the trigger point
On the displayed wave form.8. AUTO/NORM : In auto mode trace is displayed inabsence of any input signal. Thedisplayis then automatically triggered forsignals above 30Hz depending upon correctsetting of Trigger LEVEL control.
9. INT/EXT : INT display triggers from signalsderivedFrom any other external source fed
Though EXT TRIG BNC socket.
10. CH1/CH2 : Selects trigger signal in INT modeDerived from either CH1 or CH2 inputs.
11. 0.2V, 1 KHz : 200mV Peak to peak 1 KHzsquare waveCalibration signal.
12. POSITION : Controls the vertical position of thedNMREC - 2 - - 2 -isplay.
13. ac/dc/gnd : Selects input coupling/grounding(Grounds the amplifier input but inputSignal is open circuited.)
14. INPUT BNCCH1/Y (CH2/X) : Input terminal of CH1/Y,
CH2/X Inputs.15. TRACE : Screw driver controls to adjust
horizontaltilt of the trace.
16. CH1/CHATTENUATOR : 12 steps compensated attenuator
from 5mV/div to 20V/div in 1, 2, 5sequence.
17. AMPLIFIER
MODE SWITCHa. ALT/CHOP : Selects switching mode for the twoChannels while in DUAL operation.
b. DUAL MODE(x-y) : In DUAL operation as a DUAL traceScope in ALT or CHOP mode asSelected.
18. CT tester : Converts scope into a component19. CT tester. : input terminals for component20. SWP/X-Y : When pressed, converts CH2 input
Into X-channels and enable use ofThe scope as on x-y scope (Y input
Via CH1). In released position,SWEEP operates.
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DEPT. OF ELECTRONICS & COMMUNICATION
GENERAL PROCEDURE FOR OPERATION OF CRO:
1. Keep the vertical shift and horizontal shift controls in their middle positions.
2. Keep the intensity control in its minimum.3. Now switch on the CRO wait for some time till the CR tube warms up.4. A horizontal line may appear if the intensity is sufficient? If not adjust the
intensity control, X shift control and if necessary the Y shift control to get thehorizontal line on the center of the screen.
5. If the horizontal line is not aligning with graticule i.e., line not actually horizontaladjust trace rotation control and align the line with the graticule.
6. Now adjust the focus control to get sharp line.7. Connect the output of the source through the probe to the vertical input of the
CRO.8. Adjust the vertical input attenuates to get the required amplitude of the signal.
9. The sweep can now be internal and does not require time adjustment. Adjust thesweep selector to get a single cycle or more cycles as per requirement.
DC VOLTAGE MEASUREMENT:
i. The CRO will be switched on and a horizontal line is obtained single theinternal sweep.
ii. The unknown DC voltage is applied to the vertical input terminal placingthe input switch to DC mode.
iii. On applications of the voltage the horizontal line shifts. This displacementis measured using the scale marking on the screen.
iv. The magnitude of the unknown voltage can be calculated by multiplyingthe displacement obtained with deflection factor unknownvoltage=deflection factor x displacement.i.e., = No. of divisions X volts/div.
AC VOLTAGE MEASUREMENT:
i. The CRO is switched on and the horizontal line is obtained.
ii. The unknown voltage is applied to the vertical deflecting plates.iii. Press x-y mode switch.iv. A vertical line is displayed by the CRO the length of this line is measured
using the scale marking on the screen.v. This length 1 multiplied by the deflection factor gives the peak to peak
amplitude of the applied voltage.Peak to peak voltage=No. of divisions in vertical direction X volt/div
Peak voltage Vm = Vpp
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MEASUREMENT OF FREQUENCY:
i. Switch on the CROii. Apply sine or square or triangular wave to the vertical plates from the
function generator.
iii. Measure distance between tow peaks of the wave in horizontal direction.iv. Time period of the wave T= distance X time/divv. Unknown frequency = 1/T
COMPONENT TESTING:
i. Switch on the CROii. Press the CT switch.iii. Plug in two probes one at the banana socket marked CT-IN, and the other
at ground.
iv. Connect the component under test across the probes.
MEASUREMENT OF UNKNOWN FREQUENCY:
TEST PATTERN:
Short circuit Open circuit Resistor Capacitor
Diode Transistor B/E JFET S/G Zener Diode
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DEPT. OF ELECTRONICS & COMMUNICATION
Experiment No: 2
PN DIODE CHARACTERISTICS
AIM: To plot the V-I characteristics of diode (Silicon and Germanium).
To find the static resistance and dynamic resistance of the PN Diode.
EQUIPMENT REQUIRED:
1) Bread Board2) Diodes Silicon -1N4007 & Germanium 0A793) Resistors 1K, 1004) DC Voltmeters (0-1V) 1No.5) DC Voltmeters (0-20V) 1No.6) DC Ammeters (0-20mA) 1No.7) DC Ammeters (0-200A) 1No.
8) DC Power Supply.9) Connecting wires.
CIRCUIT DIAGRAM:
Fig 2.1 Forward Bias
Fig 2.2 Reverse Bias
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A
V
1K
0-20V0-20V 1N4007
0-200A
A
V
1K
0-20V0-20V 1N4007
0-200A
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PROCEDURE:
1. Construct the circuit as shown in fig.2.1
2. Vary the Supply Voltage from 0V to an incremental step of voltage 0.1V andnote down the ammeter and voltmeter readings.3. Tabulate the results and Plot the V-I Characteristics.4. Repeat the steps 2 and 3 using Germanium diode.5. For reverse bias condition construct the circuit as shown in fig.2.26. Repeat the steps 2 and 3 using Silicon and Germanium diode.7.
OBSERVATION TABLE:
FORWARD BIAS:
S.No.Silicon Diode Germanium Diode
Vf(Volts) If (mA) Vf(Volts) If(mA)
REVERSE BIAS:
S.No.Silicon Diode Germanium Diode
Vr (Volts) Ir ( A) Vr (Volts) Ir ( A)
IDEAL GRAPH:
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Fig.2.3 Model Graph
CALCULATIONS FOR SILICON DIODE AND GERMANIUM DIODE:
Static resistance (rs):
rs= V1/I1
Dynamic Resistance (rd):
rd=(V2-V1) / (I2-I1)
RESULT:
Static Resistance:
Dynamic Resistance:
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DEPT. OF ELECTRONICS & COMMUNICATION
Experiment No: 3
ZENER DIODE CHARACTERISTICS
AIM: To determine the V-I characteristics and Break Down Voltage of Zener diode
under reverse bias conditions. (8.2V).
APPARATUS:
1) Bread Board2) Zener Diodes 8.2V3) Resistors 1k 1Nos4) DC Voltmeters (0-20V) 1No.5) DC Ammeters (0-20mA) 1No.6) DC Power Supply7) Connecting wires
CIRCUIT DIAGRAM:
Fig.3.1
PROCEDURE:
1. Make the connections as shown in Fig 3.1
2. Vary the supply voltage from 0V to an incremental step voltage of 0.5V.3. Tabulate the results and plot the V-I characteristics under reverse biascondition.
4. Note down the readings of Voltmeter and Ammeter.5. Observe the Break Down Voltage of Zener Diode
OBSERVATION TABLE:
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A
V
1K
0-20V0-20V 8.2 Vz
0-20mA
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DEPT. OF ELECTRONICS & COMMUNICATION
Reverse bias:
S.No.
8.2V Zener Diode
Vr (Volts) Ir (mA)
IDEAL GRAPH:
Calculations for Silicon Diode and Germanium Diode:
Breakdown Voltage:
RESULT:
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DEPT. OF ELECTRONICS & COMMUNICATION
Experiment No: 4
TRANSISTOR COMMON BASE-CONFIGURATIONCHARACTERISTICS
AIM: To obtain the input and output characteristics of a Common BaseConfiguration of a transistor.
APPARATUS:
1. Bread board2. Resistors 1K-2 No.3. Transistor BC107-1No.4. DC Voltmeter (0-1V) 1No.5. DC Voltmeter (0-20V) 1No.6. DC Ammeters (0-20mA) 1No.
7. DC Power Supply8. Connecting Wires
CIRCUIT DIAGRAM:
Fig 4.1
PROCEDURE:
Input Characteristics:
1. Make the connections as shown in Fig 4.12. First fix the VCB at 5V. Now vary supply voltage slowly and note down the
current IE for each value of VEB.3. Repeat the above steps for VCB =10V.4. Plot the graph between VEB and IE at VCB = 5V and 10V.
Output Characteristics:
1. Make the connections as as shown in Fig 4.12. First fix the IE at 5mA. Now vary supply voltage slowly and note down the
current IC for each value of VCB3. Repeat the above steps for IE =15mA.
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VCB
IE
IC
1K
0-15V0-5V
0-20mA
0-1V
0-20mABC107E C
B
VEB 0-20VV
A
V
A
1K
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DEPT. OF ELECTRONICS & COMMUNICATION
4. Plot the graph between VCB and IC at IE = 5mA and 15mA.
OBSERVATION TABLE:
Input Characteristics:
VCB=5V VCB=10VVEB
(Volt)IE
(mA)VEB
(Volt)IE
(mA)
Output Characteristics:
IE=5mA IE=15mAVCB
(Volt)IC
(mA)VCB
(Volt)IC
(mA)
IDEAL GRAPHS:
RESULT:
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DEPT. OF ELECTRONICS & COMMUNICATION
Experiment No: 5
TRANSISTOR COMMON EMITTER CHARACTERISTICS
AIM: To plot input and output characteristics of Common Emitter Configuration of
a Transistor.APPARATUS:
1. Bread board.2. BC 107 Transistor.3. Regulated power supply.4. DC Ammeter (0-20 mA) 1no, (0-200 A) 1no.5. DC Voltmeter (0-1 V) - 1 nos, (0-20 V) - 1 nos.6. Resistor 100K and 1K .
CIRCUIT DIAGRAM:
Fig 5.1
PROCEDURE:
Input characteristics:
1. Make the connections as shown in the fig 5.12. First fix the VCE at 5V, now vary VEB in step of 0.1V and note down thereadings of base current IB.
3. Repeat the above procedure by keeping VCE at 15V.
Out put characteristics:
1. Make the connections as shown in the fig 5.12. First fix the IB at 5 A, now vary VCE in step of 0.1V and note down
the readings of collector current IC.
3. Repeat the above procedure by keeping IB at 15 A.
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100K
0-10V0-5V
V
0-200A
0-1V
0-200mA
VBE
0-20V
VCE
A
A
V
BC107E
CB
V
1KIc
IB
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DEPT. OF ELECTRONICS & COMMUNICATION
OBSERVATION TABLE:
Output Characteristics
IB =5 A IB =15 AVce (V) IC (mA) Vce (V) IC (mA)
Input Characteristics:VCE =5V VCE =15V
VBE (V) IB ( A) VBE (V) IB ( A)
IDEAL GRAPHS
RESULT:
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DEPT. OF ELECTRONICS & COMMUNICATION
Experiment No: 6
RECTIFIERS WITHOUT FILTERS
AIM: To Calculate ripple factor and efficiency of Half wave and full waverectifiers without filters.
APPARATUS:
1. Bread board2. Diodes 1N4007(2no.s)3. Digital multi meters (1no.s)4. Decade resistance box
5. CRO with probes6. Connecting wires7. Transformer
CIRCUIT DIAGRAM:
Fig: 6.1 Half Wave Rectifier
Fig: 6.2 Full Wave Rectifier
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RL
V0
230 AC
Supply50Hz VM
1N4007
RL
V0
230 ACSupply50Hz
1N4007
1N4007
VM
VM
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PROCEDURE:
1. Connect the circuit as per the circuit diagram shown in fig 6.1.2. Note down the VM at the secondary winding of the transformer by
using digital multimeter and also measure the no load voltage (VNL) byremoving the load from the circuit.3. Now connect the load RL at 1k then measure the values of Idc, Vdc, Iac
and Vac.4. Take the above readings by varying the RL in steps of 1k.5. Repeat the above steps 1,2,3 and 4 for fig 6.2.6. Observe the output wave forms of rectifiers by using CRO.7. Plot the graph between RL and % Regulation
OBSERVATOIN TABLE:
Half wave rectifier:VM = -------- V(AC) VNL = ---------- V(DC)
RLVdc(V)
Idc(mA)
Vac(V)
Iac(mA
)
RL =Vdc/ Idc r=Vac/Vdc
% reg = =(Pdc/Pac)x
100
Full wave rectifier:VM = ---------- V(AC) VNL = ------- V(DC)
RLVdc(V)
Idc(mA)
Vac(V)
Iac(mA)
RL =Vdc/ Idc r=Vac/Vdc
% reg = =(Pdc/Pac)x
100
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VNL Vdc
Vdc
x 100
VNL Vdc
Vdc
x 100
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OUTPUT WAVE FORMS:
GRAPH:
CALCULATIONS:
1. Ripple factor ( r ) = V1rms I1rms Vdc Idc
2. % Regulation
3. Efficiency () = (Pdc/Pac) x100
Pdc= Vdc x Idc, Pac= Vrms x Irms
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VNL Vdc
Vdc
x 100=
=
RL
% Reg
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OBSERVATIONS:
S.No.Half waverectifier
Full waverectifier
1. Ripple factor ( r )
2. % Regulation
3. Efficiency ()
Result:
Experiment No: 7
RECTIFIERS WITH FILTERS
AIM: To study the various parameters of full wave rectifiers with filters.
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APPARATUS:
1. Bread board2. Diodes 1N4007(2 no.s)3. Digital multi meters (1 no.s)
4. Decade resistance box5. CRO with probes6. Transformer7. Capacitor 470F 2No.s8. Inductor 45mH 1No.9. Connecting wires
CIRCUIT DIAGRAM:
Fig 7.1 C - Filter
Fig 7.2 L Section Filter
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V0
230 ACSupply50Hz
1N4007
1N4007
470F
C
D1
D2
V0
230 ACSupply50Hz
1N4007
1N4007
470F
C
D1
D2
45mH
L
470F V0
230 AC
Supply50Hz
1N4007
1N4007
470F
C
D1
D2
45mH
L
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Fig 7.3 - section Filter
PROCEDURE:
1. Connect the circuit C filter as per the circuit Diagram shown in Fig 7.1.2. Note down the Vm at the secondary Winding of the transformer by using
digital multimeter and also measure the no load voltage (VNL) by removingthe load from the circuit.
3. Now connect the load RL at 1k then measure the values of Idc, Vdc, Iac andVac.
4. Take the above readings by varying the RL in steps of 1k.5. Repeat the above steps 1, 2, 3 and 4 for L-Section and - section filter as
shown in the fig 7.2 fig 7.3 respectively.6. Observe the output wave forms of rectifiers by using CRO.7. Plot the graph between RL and % regulation.
OUTPUT WAVE FORMS:
OBSERVATOIN TABLE:
Full wave rectifier:
Vm =..V(AC), VNL =..V L-section,VNL = . V -section, VNL = . V C Filter
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DEPT. OF ELECTRONICS & COMMUNICATION
FilterRL
Vdc(V)
Idc(mA)
Vac(V)
Iac(mA)
RL =Vdc/ Idc
Ripplefactor =Vac/Vdc
% Reg =(Pdc/Pac)x
100
L-Section
-section
C Filter
CALCULATIONS:
1. Ripple factor ( r ) = V1rms I1rms Vdc Idc
2. % Regulation
3. Efficiency () = (Pdc/Pac) x100
Pdc= Vdc x Idc, Pac= Vrms x Irms
GRAPH:
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VNL Vdc
Vdcx 100=
=
RL
% Reg
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OBSERVATIONS:
S.No.Half waverectifier
Full waverectifier
Bridgerectifier
1 Ripple factor ( r )
2. % Regulation
3. Efficiency ()
RESULT:
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DEPT. OF ELECTRONICS & COMMUNICATION
Experiment No: 8
FIELD EFFECT TRANSISTOR CHARACTERISTICS
AIM: To observe Field Effect Transistor characteristics (i.e. Drain andTransfer) and calculate drain resistance (rd), Tran conductance (gm)and Amplification factor ().
APPARATUS REQUIRED:
1. Bread Board.2. DC Ammeters (Digital) (0-20mA)-1No3. DC Voltmeters (Digital) (0-20V)- 2 Nos4. Field Effect Transistor - BFW11
5. Connecting wires.
CIRCUIT DIAGRAM:
Fig 8.1
PROCEDURE:1. Connect the circuit as per circuit diagram as shown in the fig 8.1.2. Keep VGS=0V, and measure Id as a function of VDS by varying the supply
voltage VDD in steps of 1V.3. Repeat step-2 with VGS= -0.5V, -1.0 V.4. Plot the drain characteristics between VDS and ID.5. Set VDS= 5V and vary VGG (I.e. input supply voltage) over it full range and
measure Id and plot the transfer characteristics.6. Evaluate rd, gm and from the graphs.
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V
A
V
1K
470
VDD
0-30V0-5V
0-20V
0-20V
0-200mA
BFW11
G
D
S
VGG
Id
VDS
VGS
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IDEAL GRAPH:
OBSERVATION TABLE:
O/P Characteristics (or) Drain Characteristics:
Vgs= 0 V Vgs = -0.5 V Vgs = -1.0 VVds (v) Id (mA) Vds (v) Id (mA) Vds (v) Id (mA)
Transfer Characteristics: At constant Vds = 5V
Vgs(v)
Id (mA)
CALCULATIONS:
Drain resistance (rd) = Vds/Id at Vgs constant.
Transconductance (gm) = Id/Vgs at Vds constant
Amplification factor () = rd x gm
RESULT:
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DEPT. OF ELECTRONICS & COMMUNICATION
Experiment No: 9
COMMON EMITTER AMPLIFIER
AIM: To obtain the frequency response characteristics and the bandwidth of
the amplifier.
APPARATUS REQUIRED:
Bread board.Transistor BC 107Resistor 1K, 3.3k, 10k, 47k.Capacitors 100F, 10FFunction Generator.CRO with probe.Connecting wires.
CIRCUIT DIAGRAM:
Fig 9.1
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47k 3.3k
1k10k100F
10F
10F
Vi
Vo
CRO
VCC
= 12V
C
E
BBC107
50mV
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PROCEDURE:
1. Connect the circuit diagram as shown in fig 9.1.2. Connect the function generator in sine wave mode at the input terminals and
the CRO at the output terminals of the circuit.
3. First keep the input signal at 1 KHz (sine wave) with amplitude is equal to50mv (VI) constant throughout the experiment.4. Now vary the input signal frequency from 100 Hz to 2MHz in steps. For every
value of input frequency note the output voltage.5. Calculate the gain magnitude of the amplifier using the formula and gain in
(dB) = 20log (vo/vi).6. Plot a graph frequency versus gain (dB) of the amplifier.7. Take 3dB I.e. 3 divisions below the constant voltage gain and mark the f1 and
f2 from the graph.Calculate the bandwidth f 2-f1=BW.
OBSERVATION TABLE:
At constant Vi = 50mV
S.No. FrequencyOutputVoltage
Voltage gainAv =(vo/vi )
Gain in (dB)=20log(vo/vi)
IDEAL GRAPH:
RESULT:
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DEPT. OF ELECTRONICS & COMMUNICATION
Experiment No: 10
COMMON COLLECTOR AMPLIFIER
AIM: To observe the frequency response characteristics of common collectoramplifier.
APPARATUS REQUIRED:
1. Bread board.2. Transistor BC 107.3. Resistors 1k, 3.3k, 33k.4. Capacitor 10F5. CRO with probe.6. Function Generator.
7. Connecting Wires
CIRCUIT DIAGRAM:
Fig 10.1
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10F
Vo
33k
1k3.3k
10F
Vi
VCC
= 12V
C
E
BBC107
50mV
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PROCEDURE:
1. Connect the circuit diagram as shown in Fig 10.1.2. Set a sine wave of 50mv, amplitude at 1 KHz from signal generator on CRO.3. Connect the output of signal generator to the input of the circuit and observe
the output of the circuit across Emitter Terminal by using CRO.4. Now vary the input signal frequency from 100 Hz to 2MHz in steps. For everyvalue of input frequency note down the output voltage.
5. Observe the output of common collector amplifier (Vo) on CRO.6. Calculate the gain of the common collector amplifier Av=Vo/Vi.
TABULAR FORM:
S.No Frequency(Hz)
InputVoltage
OutputVoltage
GainAv = Vo/Vi
THEORITICAL CALCULATIONS:
1. Av = Vo / Vi
RESULT:
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DEPT. OF ELECTRONICS & COMMUNICATION
Experiment No: 11
SINGLE STAGE RC-COUPLED AMPLIFIER
AIM: To obtain the frequency response characteristics and the bandwidth ofthe RC Coupled amplifier.
APPARATUS REQUIRED:
1. Bread board.2. Transistor BC 107.3. Resistors 1k, 3.3k, 10k, 100k.4. Capacitor 10F, 100F5. Function Generator.6. CRO with probe.7. Connecting wires.
CIRCUIT DIAGRAM:
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Vo
47k 3.3k
1k10k100F
10F
10F
Vi
VCC
= 12V
C
E
BBC107
1K
50mV
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Fig 11.1
PROCEDURE:
1. Connect the circuit diagram as shown in Fig 11.1.
2. Connect the function generator in sine wave mode at the input terminals andthe CRO at the output terminals of the circuit.3. First keep the input signal at 1 KHz (sine wave) with amplitude is equal to
50mv (VI) constant throughout the experiment.4. Now vary the input signal frequency from 50 Hz to 2MHz in steps. For every
value of input frequency note the output voltage.5. Calculate the gain magnitude of the amplifier using the formula
gain in (dB) = 20log (vo/vi).6. Plot a graph frequency versus gain (dB) of the amplifier.7. Take 3dB I.e. 3 divisions below the constant voltage gain and mark the f1 and
f2 from the graph.
8. Calculate the bandwidth f2-f1=BW.
OBSERVATION TABLE:
At constant Vi=50Mv
S.no Frequency OutputVoltage
Voltage gainAv=(vo/vi )
Gain in (dB)=20log(vo/vi)
IDEAL GRAPH:
RESULT:
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DEPT. OF ELECTRONICS & COMMUNICATION
Experiment No: 12
FIELD EFFECT TRANSISTOR AMPLIFIER
AIM: To observe the frequency response of Field Effect Transistor amplifierand calculate gain and band width.
APPARATUS:
1. Bread Board2. Field Effect Transistor (BFW 10 (or) BFW11).3. RPS (DC 12V)4. CRO5. CRO Probes
6. Resistors 1M , 2.2 K , 1K7. Capacitors: 1 F, 10 F8. Connecting wires
CIRCUIT DIAGRAM:
Fig 12.1
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10F1k
Vo
2.2k
1k
1M
1F
1F
Vi
VDD
= 12V
D
S
GBFW11
50mV
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PROCEDURE:
1. Connect the Circuit Diagram as shown in the fig 12.1.2. Connect the function generator in sine wave mode at the input terminals andthe CRO at the output terminals of the circuit
3. Measure output voltage and calculate gain= Vout / Vin.4. The half power points are noted from the graphs and bandwidth is calculated.
TABULAR FORM:
S.NO FREQUENCY(Hz)OUTPUT
VOLTAGE(V)GAIN(G)=V0/VI=AV
GAIN in Db=20 log(Vo/Vi)
IDEAL GRAPH:
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DEPT. OF ELECTRONICS & COMMUNICATION
PROCEDURE:
1. Connect the circuit diagram as shown in fig 13.12. Observe the output at collector terminal by using CRO.
3. Calculate the frequency of oscillations from CRO practically.4. Calculate theoretical frequency of oscillations using the formula
f= 1/2RC6+4K where K = Rc/R
OBSERVATION TABLE:
IDEAL GRAPH:
F = 1/T
RESULT:
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S.no Value ofresistance
Value ofcapacitance
TheoreticalFrequency( Hz)
PracticalFrequency( Hz)
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DEPT. OF ELECTRONICS & COMMUNICATION
Experiment No: 14
CURRENT SERIES FEEDBACK AMPLIFIER
AIM: To plot the frequency of the feedback amplifier and to measure thegain and band width.
APPARATUS:
1. Bread Board.2. Resistors 2.2K, 47K, 1K, 10K3. Capacitors 0.1F.4. Transistor BC 107.5. Regulated Power Supply.
6. CRO.7. Function Generator.8. Connecting Wires
CIRCUIT DIAGRAM:
Fig 14.1
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47k 2.2k
1k10k
0.1F
Vi
Vo
VCC
= 12V
C
E
BBC107
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DEPT. OF ELECTRONICS & COMMUNICATION
PROCEDURE:
1. Connect the circuit as shown in fig 14.1.2. Keep the emitter resistance RE bypassed by connecting the capacitor CE
across RE from the circuit. Apply the AC signal voltage to the input of theamplifier from the signal generator. Keep the input voltage low and freq at 1KHz.
3. Now disconnect capacitor CE across RE from the circuit again measure thevoltage at the output.
4. Find the gain of the amplifier i.e. with feedback and without feedback.5. Vary the frequency of the input signal from 10Hz to 2MHz and measure the
output at each value of frequency for with feedback and without feedback bykeeping the input voltage constant.
6. Plot the frequency response curve and calculate band width for with feedbackand without feedback.
Band width:
Without feedback (f2-f1) =
With feedback (f2-f1) =
RESULT :
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DEPT. OF ELECTRONICS & COMMUNICATION
Experiment No: 15
VOLTAGE SERIES FEED BACK AMPLIFIER
AIM: To observe the frequency response of the voltage series feedbackamplifier
APPARATUS:
1. Bread Board.2. Function generator.3. CRO, with probe.4. Transistor BC1075. Resistors-10k,2.2k,47k6. Capacitors 0.1F.
7. Regulated Power Supply8. Connecting wires.
CIRCUIT DIAGRAM:
PROCEDURE:
1. Make the connections as per the circuit diagram.2. Set the input voltage to 50 mV at 1 KHz from Function generator.3. By varying the frequency of applied voltage using function generator
the output voltage is noted from CRO4. A graph is plotted between frequency and voltage gain
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Vo
47k
2.2k10k
0.1F
Vi
VCC
= 12V
C
E
BBC107
50mV
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DEPT. OF ELECTRONICS & COMMUNICATION
5. The bandwidth of amplifier is calculated from the graph
OBSERVATION TABLE
S.No Vin(volts) Frequency Vo (volts) Avf=Vo/Vin
IDEAL GRAPH:
RESULT:
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DEPT. OF ELECTRONICS & COMMUNICATION
Experiment No: 16COLPITTS OSCILLATOR
AIM: To calculate the frequency of colpitts oscillator theoretically as well as
practically.
APPARATUS:
Bread board.Resistors 3.3K, 100K, 2.2K, 220,10k.Capacitor 10F, 100F, 0.001F, 0.1F.Transistor BC 107Decade Inductance Box.CRO with probes.Regulated Power Supply
Connecting Wires
CIRCUIT DIAGRAM
Fig 16.1
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2.2K 10F
100K3.3K
10F
10K 220K 100F0.1F
Vcc =12V
VoBC107
E
BC
0.001F
100H - 900H
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DEPT. OF ELECTRONICS & COMMUNICATION
PROCEDURE:
1. Connect the circuit as shown in the fig 16.1.Connect the CRO at output terminals.
Observe and record the frequency of Oscillations of CRO.Calculate the frequency of oscillations practically.Calculate the frequency of oscillations theoretically by using the formula
f= 1/(2II(LCT)) where L =200H, 300H, 500H.CT = C1C2/C1+C2
OBSERVATION TABLE:
S.No C 1 C 2 CT=C1C2/C1+C2 L f=1/(2II(LCT))
200H 300H 500H
1
2
3
IDEAL GRAPH:
F = 1/T
RESULT:
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DEPT. OF ELECTRONICS & COMMUNICATION
Experiment No: 17
HARTLEY OSCILLATOR
AIM: To calculate the frequency of Hartley oscillator theoretically as well aspractically.
APPARATUS:
Bread board.Transistor BC 107Resistor 3.3K, 100K, 2.2K, 220, 10KDecade Capacitance Box - 10F, 1F.Inductor 5mH, 9mH, 50mH, 500mH.CRO with probes.
Regulated Power SupplyConnecting wires
CIRCUIT DIAGRAM:
Fig 17.1
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2.2K 10F
100K3.3K
10F
10K 220K 100F
L1
L1
Vcc =12V
Vo
BC107
E
BC
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DEPT. OF ELECTRONICS & COMMUNICATION
PROCEDURE:
1. Connect the circuit as shown 17.1.2. Now switch ON the Power supply.3. Observe and record the frequency of Oscillations of CRO.
4. Calculate the frequency of oscillations practically F = 1/T.5. Calculate the frequency of oscillations theoreticallyby using the formula f= 1/ (2II(C LT))
Where LT = L1+L2 and L1=5mH, L2=9mH.
OBSERVATION TABLE:
S.No. L1 L2 C LT fT=1/2C LT1F 10F
IDEAL GRAPH:
RESULT:
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DEPT. OF ELECTRONICS & COMMUNICATION
Experiment No: 18
WIEN BRIDGE OSCILLATOR
AIM: To study and calculate the frequency of operation of wein bridge oscillator.
APPARATUS:
1. Two stage RC Coupled amplifier trainer kit.2. C.R.O with probe.3. DRB-2no4. DCB-2no.5. Patch cards.
CIRCUIT DIAGRAM:
Fig 18.1
PROCEDURE:
1. Connect the circuit diagram as shown in 18.1.2. Vary the R1, R2, C1 and C2 Values and calculate the theoretical values of the
frequency using the formulafr = 1/(2 R1R2C1C2)3. Repeat step 2 for different values of R1 & R2 ,C1 & C2 are note down the
frequencies.4. At the same time calculate frequency practically from CRO.
OBSERVATION TABLE:
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DEPT. OF ELECTRONICS & COMMUNICATION
R1 R2 C1 C2 fr = 1/(2 R1R2C1C2) F= 1/T (on CRO)
IDEAL WAVE FORM:
RESULT:
Experiment No: 19
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DEPT. OF ELECTRONICS & COMMUNICATION
SILICON CONTROLLED RECTIFIER
AIM: To Calculate the Latching and Holding Current for a given SCR.
APPARATUS:
1. Bread Board2. Resistor 1k 2 nos3. Ammeter 0-20mA 2 nos4. Voltmeter 0-20 V 1 nos5. Silicon Controlled Rectifier6. Regulated Power Supply
CIRCUIT DIAGRAM:
Fig 19.1
PROCEDURE:
1. Connect the circuit as per the circuit diagram 19.1.2. Set gate current Ic equal to fixing current and vary node to Cathode voltage
VAK in steps of 0.5 V and note down the corresponding Anode current IA.3. VBE is the point where VAK suddenly drops and there is a sudden increase incurrent IA.
4. Note down the current at that point referred as Latching Current.5. Increase VAK in steps till its maximum.6. Open the gate terminal and decrease the VAK.7. Holding Current is the current below which the deflection in both the
Voltmeter and Ammeter suddenly reaches to 0.
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0-20V
A
V
1K
0-20V
0-20mAA
1K0-20mA
0-20V
0-20V
A
K
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DEPT. OF ELECTRONICS & COMMUNICATION
TABULAR COLUMN:
VAK (volts) IA (mA)
EXPECTED GRAPHS:
OBSERVATIONS:
IG =
IA =
VAK =
IH =
RESULT:
Experiment No: 20
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IC
IA
VAK
(volts)
IA
(mA)
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DEPT. OF ELECTRONICS & COMMUNICATION
COMMON BASE TRANSISTOR STATIC CHARACTERISTICS
AIM: To obtain the input and output static characteristics of a CB transistorConfiguration.
APPARATUS:
1. Bread boards2. Resistors 220 - 1 No. and 1k - 1 No3. Transistor BC107A-1No.4. DC Voltmeter - (0-2V) - 1No.5. DC Voltmeter - (0-20V) - 1No.6. DC Ammeter - (0-200mA) - 2No.s7. DC Power supply (0-30V/1A) - 1No.8. Connecting wires
CIRCUIT DIAGRAM:
PROCEDURE:
Input characteristics:
1. Make the connections as per the circuit diagram2. Measure VEB and IB under open circuit at output side.3. Measure VEB and IB under short circuit at output side.4. First open the circuit the VCB.Now vary slowly VEB and note down the current
IE5. Repeat for VCB at 0V,-1V, -10V, -15V.
Output characteristics:
1. Make the connections as per the circuit diagram2. First fix the IE at 1mA. Now vary the VCB in steps note the current IC for each
step.3. Repeat for IE at 2mA and 3mA.
OBSERVATION TABLE:
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DEPT. OF ELECTRONICS & COMMUNICATION
Input Characteristics:
VCB = Open VCB = Short VCB = -1V VCB = -10V VCB = -15VVEB(V)
IE(mA)
VEB(V)
IE(mA)
VEB(V)
IE(mA)
VEB(V)
IE(mA)
VEB(V)
IE(mA)
0
0.1
0.2
0.4
0.6
0.8
1.0
2.0
Output characteristics:
IE = 0mA IE = 10mA IE = 20mA IE = 30mA IE = 40mAVCB
(V)
IC
(mA)
VCB
(V)
IC
(mA)
VCB
(V)
IC
(mA)
VCB
(V)
IC
(mA)
VCB
(V)
IC
(mA)0.25
0
-2
-4
-6
-8
-10
GRAPH:
1. Draw the curve for input characteristics for CB configuration VEB (V) Vs IE(mA) keeping VCB (Open), VCB = 0 (Short), VCB = -1V, -10V and -20Vrepeating.
2. Draw the curve for output characteristics for CB configuration VCB (V) Vs IC(mA) keeping IE = 0 (Short), 10mA, 20mA, 30mA and 40mA repeating.
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DEPT. OF ELECTRONICS & COMMUNICATION
DISCUSSION:
1. Explain the input and output static characteristics of a common base transistorconfiguration.
2. Explain the early effect.
3. Discuss the active, saturation and cutoff regions of the above4 characteristics.
RESULT:
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