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IC Processing. Initial Steps: Forming an active region Si 3 N 4 is etched away using an F-plasma: Si3dN4 + 12F → 3SiF 4 + 2N 2 Or removed in hot.

IC Processing. Initial Steps: Forming an active region Si 3 N 4 is etched away using an F-plasma:...

Category: Documents

Released: December 13, 2015

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