Documents Simulations of sub-100nm strained Si MOSFETs with high- gate stacks Lianfeng Yang, Jeremy Watling.....

Slide 1 Simulations of sub-100nm strained Si MOSFETs with high-  gate stacks Lianfeng Yang, Jeremy Watling *, Fikru Adamu-Lema, Asen Asenov and John Barker Device Modelling…

Documents Simulations of sub-100nm strained Si MOSFETs with high- gate stacks

Simulations of sub-100nm strained Si MOSFETs with high- gate stacks Lianfeng Yang, Jeremy Watling*, Fikru Adamu-Lema, Asen Asenov and John Barker Device Modelling Group,…