Documents Thesis Draft

DESIGN OF LOADLESS 4T-SRAM CELL IN 28 nm FDSOI AND 28 nm BULK TECHNOLOGY FOR LOW-POWER & LOW- AREA APPLICATION A Thesis submitted in partial fulfillment of the requirement…

Documents Silicon – On - Insulator (SOI). SOI is a very attractive technology for large volume integrated...

Silicon – On - Insulator (SOI) SOI is a very attractive technology for large volume integrated circuit production and is particularly good for low – voltage, low power…

Documents IC Design and Technologies for HL-LHC A. Marchioro CERN-PH-ESE.

IC Design and Technologies for HL-LHC IC Design and Technologies for HL-LHC A. Marchioro CERN-PH-ESE State of the art 2013: 16 nm FINFET ECFA Meeting HL-LHC / Oct 2013 2…

Documents IC Design and Technologies for HL-LHC

IC Design and Technologies for HL-LHC IC Design and Technologies for HL-LHC A. Marchioro / CERN-PH-ESE Outline Background and motivation Technical roadmap Requirements Organizational…