Slide 119th RD50 Workshop, CERN, Geneva November 2011 Charge collection close to the Si-Si0 2 interface of silicon strip sensors Thomas Pöhlsen, Eckhart Fretwurst, Robert…

Lecture 18 OUTLINE The MOS Capacitor (cont’d) Effect of oxide charges Poly-Si gate depletion effect VT adjustment Reading: Pierret 18.2-18.3; Hu 5.7-5.9 Oxide Charges In…

Modeling, Characterization and Design of Wide Bandgap MOSFETs for High Temperature and Power Applications UMCP: Neil Goldsman Gary Pennington (Post-Doctoral)* Siddharth Potbhare…

Folie 1 Charge collection close to the Si-Si02 interface of silicon strip sensors Thomas Pöhlsen, Eckhart Fretwurst, Robert Klanner, Sergej Schuwalow, Jörn Schwandt, Jiaguo…

Introduction Amorphous arrangement of atoms means that there is a possibility that multiple Si atoms will be connected Thin ‘wires’ of Si within SiO2 layer enables leakage…

Lecture 18 OUTLINE The MOS Capacitor (cont’d) Effect of oxide charges Poly-Si gate depletion effect VT adjustment Reading: Pierret 18.2-18.3; Hu 5.7-5.9 Oxide Charges Within…