Slide 1 50-200 GHz InP HBT Integrated Circuits for Optical Fiber and mm-Wave Communications Mark Rodwell University of California, Santa Barbara [email protected] 805-893-3244,…

Slide 1 Y. Wei, M. Urteaga, Z. Griffith, D. Scott, S. Xie, V. Paidi, N. Parthasarathy, M. Rodwell. Department of Electrical and Computer Engineering, University of California,…

Slide 1 1 Bipolar Junction Transistors (BJTs) Slide 2 Copyright  2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith2 Bipolar Junction…

Slide 1 EE 434 Lecture 22 Bipolar Device Models Slide 2 Quiz 14 The collector current of a BJT was measured to be 20mA and the base current measured to be 0.1mA. What is…

1. The drift velocity of electrons in silicon a. Is proportional to the electric field for all values of electric field b. is independent of the electric field c. increases…

Y. Wei, M. Urteaga, Z. Griffith, D. Scott, S. Xie, V. Paidi, N. Parthasarathy, M. Rodwell. Department of Electrical and Computer Engineering, University of California, Santa…

Multi-stage G-band (140-220 GHz) InP HBT Amplifiers M. Urteaga, D. Scott, S. Krishnan, Y. Wei, M. Dahlström, Z. Griffith, N. Parthasarathy, and M. Rodwell. Department of…

Single-stage G-band HBT Amplifier with 6.3 dB Gain at 175 GHz M. Urteaga, D. Scott, T. Mathew, S. Krishnan, Y. Wei, M. Rodwell. Department of Electrical and Computer Engineering,…

Single-stage G-band HBT Amplifier with 6.3 dB Gain at 175 GHz M. Urteaga, D. Scott, T. Mathew, S. Krishnan, Y. Wei, M. Rodwell. Department of Electrical and Computer Engineering,…

185 GHz Monolithic Amplifier in InGaAs/InAlAs Transferred-Substrate HBT Technology M. Urteaga, D. Scott, T. Mathew, S. Krishnan, Y. Wei, M. Rodwell. Department of Electrical…