SET (3)- SET (3)- OBJECTIVE TYPE QUESTIONS 1. The breakdown mechanism in a lightly doped p-n junction under reverse biased condition is called (A) avalanche breakdown. (B)…
TYPICAL QUESTIONS & ANSWERS PART - I OBJECTIVE TYPE QUESTIONS Each Question carries 2 marks. Choose correct or the best alternative in the following: Q.1 The breakdown…
1. Semiconductor Devices Presentation on Photonic sources of light By Rohit Singh M.Tech VST School of Engineering Shiv Nadar University 2. Photonic sources of light Photonic…
Slide 1SEMICONDUCTOR DEVICES INTRODUCTION Slide 2 Semiconductor Devices In year 2010 sales volume of the electronic industry will reach three trillion dollars and will constitute…
1. IntroductionO Invented by Dr. Leo Esaki in 1958.O Also called Esaki diode.O Basically, it is heavily doped PN- junction.O These diodes are fabricated from germanium, galliumarsenide…
1. MADE BY GROUP 4 • BILAL HASSAN • HAMZA ISMAIL MALIK • ALI HASSAN ZAIDI • MUHAMMAD ADNAN • YOUNS NAQASH 2. TUNNEL DIODE 3. OUT LINES HISTORY DEFINITION CONSTRUCTION…
1. MADE BY GROUP 4 • BILAL HASSAN • HAMZA ISMAIL MALIK • ALI HASSAN ZAIDI • MUHAMMAD ADNAN • YOUNS NAQASH 2. TUNNEL DIODE 3. OUT LINES HISTORY DEFINITION CONSTRUCTION…
Slide 1 Semiconductors Direct bandgap semiconductors (GaAs, InGaAs, InGaAsP) The minimum of CB is directly above the maximum of VB Electro-hole pair can recombine directly…