100+ GHz Transistor Electronics: Present and Projected Capabilities [email protected] 805-893-3244, 805-893-5705 fax 2010 IEEE International Topical Meeting on Microwave…

asdfasdfasdf III-V HBT and (MOS) HEMT scaling Mark Rodwell, University of California, Santa Barbara WSG Workshop: Performance Metrics for mm-Wave Devices and Circuits from…

Process Technologies For Sub-100-nm InP HBTs & InGaAs MOSFETs M. A. Wistey*, U. Singisetti, G. J. Burek, B. J. Thibeault, A. Baraskar, E. Lobisser, V. Jain, J. Cagnon,…

DEVELOPMENT OF BETA SPECTROMETRY USING CRYOGENIC DETECTORS M. Loidl, C. Le-Bret, M. Rodrigues, X. Mougeot CEA Saclay – LIST / LNE, Laboratoire National Henri Becquerel,…

DEVELOPMENT OF BETA SPECTROMETRY USING CRYOGENIC DETECTORS M. Loidl, C. Le-Bret, M. Rodrigues, X. Mougeot CEA Saclay – LIST / LNE, Laboratoire National Henri Becquerel,…

* Lower Limits To Specific Contact Resistivity Ashish Baraskar1, Arthur C. Gossard2,3, Mark J. W. Rodwell3 1GLOBALFOUNDRIES, Yorktown Heights, NY Depts. of 2Materials and…

100+ GHz Transistor Electronics: Present and Projected Capabilities [email protected] 805-893-3244, 805-893-5705 fax 2010 IEEE International Topical Meeting on Microwave…