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CHAPTER 2 THE IDEAL MOS CAPACITOR 2.1 Introduction 2.2 The Silicon/Silicon Dioxide System 2.3 Band Bending in the MOS Capacitor 2.4 Solution of Poisson's Equation forthe…

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1. DEGREE PROJECT, IN NANOTECHNOLOGY , SECOND LEVEL STOCKHOLM, SWEDEN 2015 Process optimization for the 4H-SiC/SiO2 interface. CHARILAOS-KIMONAS KARALAS KTH ROYAL INSTITUTE…

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A G r e a t e r M e a s u r e o f C o n f i d e n c e Keithley Instruments, Inc. 28775 Aurora Road Cleveland, Ohio 44139 (440) 248-0400 Fax: (440) 248-6168 www.keithley.com…