1.Nanocrystals for opticalamplificationS. Janssens1,2, G. Williams2, D. Clarke1 and S. G. Raymond11 Industrial Research Ltd, P.O. Box 31310, Lower Hutt, New Zealand.Victoria…
Slide 1 Studies of Minority Carrier Recombination Mechanisms in Beryllium Doped GaAs for Optimal High Speed LED Performance An Phuoc Doan Department of Electrical Engineering…
Slide 1 Techniques for achieving >20% conversion efficiency Si-based solar cells Qingkai QIAN Department of Electronic and Computer Engineering The Hong Kong University…
Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes Interplay of polarization fields and Auger recombination…
Name of presentation 6 FIG. 1. Schematic view of InGaN LEDs with conventional GaN barrier (original structure), InGaN barriers (structure A), and InGaN barriers and dip-shaped…