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E003676 - Memory Forum - Physics of Double and Single Barrier Tunneling … · TUNNELING RANDOM-ACCESS MEMORY OPERATION MICROSTATES COMPARISON OF QC FOR TRAM & DRAM . HIGH • 107

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E003676 - Memory Forum - Physics of Double and Single Barrier Tunneling … · TUNNELING RANDOM-ACCESS MEMORY OPERATION MICROSTATES COMPARISON OF QC FOR TRAM & DRAM . HIGH • 107

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Page 1: E003676 - Memory Forum - Physics of Double and Single Barrier Tunneling … · TUNNELING RANDOM-ACCESS MEMORY OPERATION MICROSTATES COMPARISON OF QC FOR TRAM & DRAM . HIGH • 107

Page 2: E003676 - Memory Forum - Physics of Double and Single Barrier Tunneling … · TUNNELING RANDOM-ACCESS MEMORY OPERATION MICROSTATES COMPARISON OF QC FOR TRAM & DRAM . HIGH • 107

TOPIC TOPIC #I#I#I#I

DARPA Ultra Program

Page 3: E003676 - Memory Forum - Physics of Double and Single Barrier Tunneling … · TUNNELING RANDOM-ACCESS MEMORY OPERATION MICROSTATES COMPARISON OF QC FOR TRAM & DRAM . HIGH • 107

Page 4: E003676 - Memory Forum - Physics of Double and Single Barrier Tunneling … · TUNNELING RANDOM-ACCESS MEMORY OPERATION MICROSTATES COMPARISON OF QC FOR TRAM & DRAM . HIGH • 107

Page 5: E003676 - Memory Forum - Physics of Double and Single Barrier Tunneling … · TUNNELING RANDOM-ACCESS MEMORY OPERATION MICROSTATES COMPARISON OF QC FOR TRAM & DRAM . HIGH • 107

TOPIC TOPIC #2#2

Page 6: E003676 - Memory Forum - Physics of Double and Single Barrier Tunneling … · TUNNELING RANDOM-ACCESS MEMORY OPERATION MICROSTATES COMPARISON OF QC FOR TRAM & DRAM . HIGH • 107

Page 7: E003676 - Memory Forum - Physics of Double and Single Barrier Tunneling … · TUNNELING RANDOM-ACCESS MEMORY OPERATION MICROSTATES COMPARISON OF QC FOR TRAM & DRAM . HIGH • 107

High K Dielectric Material Study for FETs and NV FlashTOPIC TOPIC #3#3

Page 8: E003676 - Memory Forum - Physics of Double and Single Barrier Tunneling … · TUNNELING RANDOM-ACCESS MEMORY OPERATION MICROSTATES COMPARISON OF QC FOR TRAM & DRAM . HIGH • 107

TOPIC TOPIC #4#4

Page 9: E003676 - Memory Forum - Physics of Double and Single Barrier Tunneling … · TUNNELING RANDOM-ACCESS MEMORY OPERATION MICROSTATES COMPARISON OF QC FOR TRAM & DRAM . HIGH • 107

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