1/110
2015
WiPDA
Ralph M. Burkart & Johann W. Kolar ETH Zurich, Switzerland
Power Electronic Systems Laboratory www.pes.ee.ethz.ch
Advanced Modeling and Multi-Objective Optimization / Evaluation of
SiC Converter Systems
Tutorial
2/110
2015
WiPDA
Outline
► Introduction ► Basic Multi-Objective Optimization Approach ► Component Models incl. Costs ► Converter Optimization / Evaluation – Example I ► Converter Optimization / Evaluation – Example II ► Conclusions
3/110
2015
WiPDA
Introduction Performance Trends Performance Space
Pareto Front Design Space
4/110
2015
WiPDA
► Power Electronics Converters Performance Trends
─ Power Density [kW/dm3] ─ Power per Unit Weight [kW/kg] ─ Relative Costs [kW/$] ─ Relative Losses [%] ─ Failure Rate [h-1]
■ Performance Indices
[kgFe /kW] [kgCu /kW] [kgAl /kW] [cm2Si /kW] ►
►
Environmental Impact…
5/110
2015
WiPDA
► Performance Improvements (1)
─ Telecom Power Supply Modules: Typ. Factor 2 over 10 Years
■ Power Density
6/110
2015
WiPDA
► Performance Improvements (2)
Inefficiency (Losses)…
■ Efficiency
─ PV Inverters: Typ. Loss Red. of Typ. Factor 2 over 5 Years
7/110
2015
WiPDA
Source: 2006
► Performance Improvements (3)
■ Costs
─ Importance of Economy of Scale
8/110
2015
WiPDA
► Performance Improvements (4)
■ Costs
─ Automotive: Typ. 10% / a ─ Economy of Scale !
Source: PCIM 2013
9/110
2015
WiPDA
► Design Challenge
■ Mutual Coupling of Performance Indices Trade-Off Analysis (!)
─ For Optimized Systems Several Performance Indices Cannot be Improved Simultaneously
10/110
2015
WiPDA
► Design Challenge
■ Mutual Coupling of Performance Indices Trade-Off Analysis (!)
─ For Optimized Systems Several Performance Indices Cannot be Improved Simultaneously
11/110
2015
WiPDA
■ Design for Specific Performance Profiles / Trade-Offs Dependent on Application
► Graphical Representation of Performance
12/110
2015
WiPDA
► Mutual Coupling of Performances (1)
■ Experimental Exploration of the Power Density Improvement of a Three-Phase PFC Rectifier System with Increasing Switching Frequency
w/o Heat Sink
fP = 50 kHz ρ = 3 kW/dm3
fP = 72 kHz ρ = 4.6 kW/dm3
fP = 250 kHz ρ = 10 kW/dm3
fP = 1 MHz ρ = 14.1 kW/dm3
13/110
2015
WiPDA
► Mutual Coupling of Performances (2)
■ Experimental Exploration of the Power Density Improvement of a Three-Phase PFC Rectifier System with Increasing Switching Frequency
Consideration of a Single Performance Index is NOT Sufficient (!)
fP = 50 kHz ρ = 3 kW/dm3
fP = 72 kHz ρ = 4.6 kW/dm3
fP = 250 kHz ρ = 10 kW/dm3
fP = 1 MHz ρ = 14.1 kW/dm3
14/110
2015
WiPDA
► Mutual Coupling of Performances (3)
■ Consideration of a Single Performance Index is NOT Sufficient (!)
■ Trade-Off of Performances Must be Considered η-ρ-Performance Limit
η-ρ-Performance Space
fP = 50 kHz ρ = 3 kW/dm3
fP = 72 kHz ρ = 4.6 kW/dm3
fP = 250 kHz ρ = 10 kW/dm3
fP = 1 MHz ρ = 14.1 kW/dm3
15/110
2015
WiPDA
► Si CoolMOS, 99mΩ/600V ► SiC Diodes, 10A/600V
PO=3.2kW UN=230V±10% UO=365V fP=33kHz ±3kHz Two Interleaved 1.6kW Systems
99.2% @ 1.1kW/dm3
► Example of η-ρ-Trade-Off (1)
■ 1-Ф Boost-Type PFC Rectifier
►
16/110
2015
WiPDA
PO=3.2kW UN=230V±10% UO=400V fP=450kHz ±50kHz Two Interleaved 1.6kW Systems
► Si CoolMOS ► SiC Diodes
5.5kW/dm3 @ 95.8%
► Example of η-ρ-Trade-Off (2)
■ 1-Ф Boost-Type PFC Rectifier
►
17/110
2015
WiPDA
Derivation of the η-ρ-Performance Characteristic
* Semiconductors / Heatsink * Output Capacitor
* Inductor
fP
18/110
2015
WiPDA
► Analysis of η-ρ-Performance Characteristic (1)
■ Specifications / Assumptions
─ Rated Output Power P2 ─ Const. Input Current Ripple ΔiL ─ Const. Output Capacitance CO (Energy Storage) ─ Const. Tj of Power Semiconductors ≈ Ts ─ Def. Ambient Temperature Ta
■ Dependency of Component Losses / Volumes on Switching Frequency fP
─ Input Inductor ─ Output Capacitor ─ Semiconductors /Heatsink
19/110
2015
WiPDA
■ Input Inductor
21 1 1
O
i
P
O O O OP
P i P i P
U U U U Iii T LI LIL I LI f f f
212
O OL L P
P L
P PV LI ff V
─ Inductor Power Density
► Analysis of η-ρ-Performance Characteristic (2)
─ Relative Inductor Losses
0 (1 ) L LLL W C L P L L PO
PP P P P k f fP
■ Output Capacitor
0 0 C LP21 const. const.
2 OC O C
C
PV CUV
20/110
2015
WiPDA
■ Semiconductors & Heatsink
► Analysis of η-ρ-Performance Characteristic (3)
─ Relative Semiconductor Losses
(1 ) SS C P C P P S P PO
PP P P P k f fP
─ Heatsink Volume / “Power Density”
11
th S O OS s a s a S
S s a S S S
G P P PCSPI T CSPI T CSPIV T V V P
WK
3dm
CSPI
Cooling System
Performance Index
21/110
2015
WiPDA
■ System Efficiency & Power Density in Dependency of fP
► Analysis of η-ρ-Performance Characteristic (4)
─ Efficiency
─ Power Density
( ) ( ) ( )1 1 1 ( ) O i L S L S L S L Si i i O
P P P P P P P PP P P P
1
O O
S CLL S C
O O O
P PV VVV V V V
P P P1 1 1 1( ) L C S
─ fP as Parameter of η = η{ρ}- Characteristic
fP
22/110
2015
WiPDA
■ Only the Consideration of All Possible Designs / Degrees of Freedom Clarifies the Absolute η-ρ-Performance Limit
► Analysis of η-ρ-Performance Characteristic (5)
■ Specific Design Only fP as Variable Design Parameter
fP =100kHz
“Pareto Front”
23/110
2015
WiPDA
► Determination of the η-ρ-Pareto Front
─ Core Geometry / Material ─ Single / Multiple Airgaps ─ Solid / Litz Wire, Foils ─ Winding Topology ─ Natural / Forced Conv. Cooling ─ Hard-/Soft-Switching ─ Si / SiC ─ etc. ─ etc. ─ etc.
─ Circuit Topology ─ Modulation Scheme ─ etc. ─ etc. ─ etc.
■ System-Level Degrees of Freedom
■ Comp.-Level Degrees of Freedom of the Design
■ Only η-ρ-Pareto Front Allows Comprehensive Comparison of Converter Concepts (!)
24/110
2015
WiPDA
Basic Multi-Objective Optimization Approach
Abstraction of Converter Design Component / System Modeling
Design / Performance Space Pareto Front
25/110
2015
WiPDA
► Mapping of Design Space into System Performance Space
Performance Space
Design Space
► Abstraction of Power Converter Design
26/110
2015
WiPDA
► Modeling and Multi- Objective Optimization of Converter Design
27/110
2015
WiPDA
► Multi-Objective Converter Design Optimization
■ Pareto Front - Limit of Feasible Performance Space
►
28/110
2015
WiPDA
■ Sensitivity to Technology Advancements ■ Trade-off Analysis
► Technology Sensitivity Analysis Based on η-ρ-Pareto Front
29/110
2015
WiPDA
► Converter Performance Evaluation Based on η-ρ-Pareto Front
■ Performance Indicator
►
■ Design Space Diversity
Design Variables & Constraints Related to Two Adjacent Points of the Pareto Front
30/110
2015
WiPDA
► Converter Performance Evaluation Based on η-ρ-Pareto Front
►
Triple-Interleaved TCM Rectifier (56kHz)
Double-Interleaved Double-Boost CCM Rectifier (450kHz)
Double-Interleaved Double-Boost CCM Rectifier (33kHz)
Triple-Interleaved TCM Rectifier (33kHz)
31/110
2015
WiPDA
3D-Performance Space Including Costs
32/110
2015
WiPDA
■ Priorities 1. Costs 2. Costs 3. Costs
4. Robustness 5. Power Density 6. Efficiency …………
─ Basic Discrepancy (!) * Most Important Industry Figure ”Unknown” to Univ. * Costs Not Considered in Applic.-Oriented Research
► Industry Perspective
+ Modularity / Scalability / Ease of Integration into Systems / etc.
33/110
2015
WiPDA
► Requirement for Quantitative Cost Models
─ Considering Only Volumes is Insufficient ─ Initial / Manufacturing Costs ─ Life Cycle Costs
─ Complexity / Reliability ─ Functionality
State-of-the-Art Si IGBTs
Advanced SiC MOSFETs
■ Advantages / Competitiveness of SiC Can Only be Revealed Considering Full System Costs
34/110
2015
WiPDA
■ σ: kW/$
► Converter Performance Evaluation Based on η-ρ-σ-Pareto Surface
35/110
2015
WiPDA
► Converter Performance Evaluation Based on η-ρ-σ-Pareto Surface ■ Maximum σ [kW/$], Related Efficiency and Power Density ■ Definition of “Technology Node” (η*,ρ*,σ*,fP*)
►
36/110
2015
WiPDA
Modeling of Components
Efficiency Power Density
Costs
37/110
2015
WiPDA
Power Semiconductors and Cooling Systems
* Cond./Switching Loss Models * Thermal Models
* Cost Models
38/110
2015
WiPDA
► Modeling Tasks and Design Variables
■ Thermal Model
■ Design Routine
39/110
2015
WiPDA
► Conduction Losses ■ MOSFET Conduction Losses
Source: CREE
Take from Data Sheet
40/110
2015
WiPDA
► Switching Losses
■ Measurement Results Layout-Dependent / Measurements Required
■ MOSFET Switching Losses
41/110
2015
WiPDA
► Semiconductor Costs
Fitted Manufacturer Data for MOQ = 50k
─ Distributors ─ Better: Manufacturer Data @ MOQ = const.
■ Source of Cost Data
■ Cost Model ─ Parameters Based on Fitted Data
─ Inter-/Extrapolation of Semiconductor Costs
MOQ … Minimum Order Quantity
42/110
2015
WiPDA
► Cooling System Modeling
Geometry, Fans
─ Experimental Verification
► ─ Fluid Dynamics Models ─ Thermodynamics Models
─ Heat Sink Dimensions ─ Heat Sink Material ─ Fan Type ─ # of Fans
43/110
2015
WiPDA
► Cooling System Costs
─ Distributors ─ Better: Manufacturer Data @ MOQ = const.
■ Fan Costs
■ Cost Model for Heat Sinks
─ Based on Fitted Manufacturer Data
►
─ Fitted Manufacturer Data for MOQ = 10k
44/110
2015
WiPDA
Magnetic Components * Core/Winding Loss Models
* Reluctance Models * Thermal Models
* Cost Models
45/110
2015
WiPDA
► Modeling Tasks and Design Variables ■ Design Routine
www.pack-feindraehte.de www.jiricek.de
http://www.ferroxcube.com/prod/assets/ecores.htm
46/110
2015
WiPDA
► Core Losses ■ Improved2 Steinmetz Equation
─ Improvement (1): Arbitrary Waveforms ─ Improvement (2): Operating Point-Dependent Parameters
─ Requires Extensive Measurements ─ Sweeps: f, Bac, Bdc, Tcore, lag
47/110
2015
WiPDA
► Winding Losses
■ Winding Losses
─ Skin and Proximity Effects Contribute to Winding Losses
─ Frequency-, Temperature- and Geometry-Dependency
─ Analytical Formulas for Fskin, Gprox and Hext Available
50 Hz 5 kHz 20 kHz 100 kHz
Skin Effect ►
Proximity Effect ►
Hext
48/110
2015
WiPDA
► Thermal Models
■ 3D Equiv. Thermal Network
─ Conduction ─ Radiation ─ Natural Convection
■ Heat Transfer Mechanisms ─ Avoid Overheating ─ Improve Loss Calculation
■ Significance
49/110
2015
WiPDA
► Verification of Multi-Physics Models
■ Setup ■ Test Inductors
■ Loss Model Verification ■ Thermal Model Verification
50/110
2015
WiPDA
► Magnetics Costs
Example: Manufact. Data for Litz Wire for MOQ = 1 Metric Ton
■ Source of Data ─ Core Manufacturers ─ Conductor Manufacturers ─ Suppliers of Magn. Components
■ Model ►
51/110
2015
WiPDA
Capacitors * Loss Models * Cost Models
52/110
2015
WiPDA
► Modeling Tasks & Design Variables
53/110
2015
WiPDA
► Capacitor Losses ■ Electrolytic Capacitor Losses
─ Take from Data Sheet
54/110
2015
WiPDA
► Capacitor Costs ►
Fitted Manufact. Data for MOQ = 50k ─ Distributors ─ Better: Manufact. Data @ MOQ = const.
■ Source of Cost Data
■ Cost Models
─ Parameters Based on Fitted Data
55/110
2015
WiPDA
Converter Optimization Example I
Isolated DC/DC Converter Topologies/Modulation Schemes
Materials/Components Optimization
η-ρ-σ-Pareto Surface Hardware Prototype
56/110
2015
WiPDA
► Application
─ Renewable Energy Sources, Local Storage Systems ─ DC Distribution Bus ─ Intelligent Load Management Algorithm ─ Possible Element of Future Smart Grid System ─ DC Microgrids Already Employed in Data Centers, Ships, Airplanes
■ Next Generation Residential Energy Management System
57/110
2015
WiPDA
► Bidirectional Wide Input Voltage Range Isolated DC/DC Converter
─ Bidirectional Power Flow ─ Galvanic Isolation ─ Wide Voltage Range ─ High Partial Load Efficiency
■ Universal DC/DC Converter
►
Structure of DC Microgrid ►
Universal DC/DC Converter
─ Reduced System Complexity ─ Lower Overall Development Costs ─ Economies of Scale
■ Advantages
58/110
2015
WiPDA
► Converter Topologies
■ Conv. 3-Level Dual Active Bridge (3L-DAB)
■ Advanced 5-Level Dual Active Bridge (5L-DAB)
59/110
2015
WiPDA
► Modulation Schemes ■ 3-Level Dual Active Bridge ■ 5-Level Dual Active Bridge
60/110
2015
WiPDA
► Modulation Schemes
■ 3-Level Dual Active Bridge ■ 5-Level Dual Active Bridge
─ Significantly Lower RMS Currents of 5L-DAB Due to Higher DOF of Modulation
61/110
2015
WiPDA
► Modulation Schemes - Zero Voltage Switching (1)
►
62/110
2015
WiPDA
► Modulation Schemes - Zero Voltage Switching (2)
►
►
63/110
2015
WiPDA
► Modulation Schemes - Zero Voltage Switching (3)
►
►
► ►
64/110
2015
WiPDA
─ Lσ Usually Provides Not Enough Charge ─ Add Lm for Additional (Reactive) Current ─ At Low Power and/or Too Short Dead Time Intervals Still not Sufficient Partial ZVS / Add. Switching Losses
■ Achieving ZVS
► Modulation Schemes - Zero Voltage Switching (4)
■ 3-Level Dual Active Bridge
■ 5-Level Dual Active Bridge
65/110
2015
WiPDA
► Components and Materials
─ Inexpensive ─ 1200 V ─ Cond. Losses Not Scalable ─ No ZVS Possible ─ Tail Currents ─ ZCS Difficult to Achieve
■ Si IGBT
─ Conduction Losses Scalable ─ ZVS But Non-Zero Sw. Losses (!) ─ Large Specific Coss ─ Only 650 V ─ NPC Half-Bridge Necessary ─ Increased Part Count
■ Si SJ MOSFET
─ Cond. Losses Scalable ─ Very Low ZVS Losses ─ 1200 V ─ Low Specific Coss ─ Costs
■ SiC VD-MOSFET
■ Power Semiconductors
66/110
2015
WiPDA
► Overview of Components and Materials
─ CREE SiC MOSFET 80 m 1200 V ─ 2 x on Variable Voltage Side ─ 1 x on Fixed Voltage Side
─ CREE SiC MOSFET 80 m 1200 V ─ Scaled 600 V SiC Switch ─ Variable Chip Sizes ─ Same Total Semicond. Cost as 3L-DAB
─ Optimized Aluminum Heat Sinks ─ Range of Low Power DC Fans
─ EPCOS N87 Ferrite E & ELP Cores ─ Litz Wire with Range of Strand Diameters
─ EPCOS MKP DC Film Capacitors ─ 575 V and 1100 V Rated
■ 3-Level Dual Active Bridge ■ 5-Level Dual Active Bridge
67/110
2015
WiPDA
► Global Optimization Routine (1)
► Local Component Optimization
Global System Optimization
►
► Dependent Global Design Variables
68/110
2015
WiPDA
► Global Optimization Routine (2)
─ Lσ ,Lm and n Determine Waveforms ─ Optimize with Chip Area Distribution
► Minimum Semiconductor Losses ► ZVS for All Operating Points ► Design Frequency: 50 kHz
■ Offline Design Variable Optimization
69/110
2015
WiPDA
► Optimization Results - Pareto Surfaces (1)
■ 3-Level Dual Active Bridge
70/110
2015
WiPDA
► Optimization Results - Pareto Surfaces (2)
■ 5-Level Dual Active Bridge
71/110
2015
WiPDA
► Optimization Results - Component Breakdown (1) ► 5L-DAB ► 3L-DAB
■ Lower RMS Currents Overcompensated by Low Chip Utilization ■ Higher 5L-DAB Conduction Losses Pc ■ Lower 5L-DAB Switching Losses Psw and Incomplete ZVS PiZVS Losses Due to More Uniform Current Waveforms
72/110
2015
WiPDA
■ Higher 5L-DAB Volume Mainly Due to Higher Capacitance for Midpoint Balancing ■ Increase of Magnetics Volume at High fsw Due to High Core Losses ■ Auxiliary Based on Prototype – Industrial Auxiliary Approx. Half the Volume
► Optimization Results - Component Breakdown (2) ► 5L-DAB ► 3L-DAB
73/110
2015
WiPDA
■ Higher fsw Allows for Lower Volume of Passives ■ However, Magnetics Require More Expensive Litz Wire, Capacitors are Inexpensive ■ Main Costs are Semiconductors and Auxiliary ■ Auxiliary (incl. Gate Drivers) Based on Prototype – Industrial Auxiliary Approx. Half the Costs
► 5L-DAB ► 3L-DAB
► Optimization Results - Component Breakdown (3)
74/110
2015
WiPDA
► Experimental Verification (1)
■ Hardware Prototype of Three-Level Dual Active Bridge (3L-DAB)
P = 5 kW Vi = [100, 700] V Vo= 750 V fsw = 50 kHz Vbox = 2.8 dm3 (171 in3)
■ Power Density 1.8 kW/dm3 ■ Peak Efficiency 98.5% ■ Average Efficiency 97.6%
75/110
2015
WiPDA
─ Peak Efficiencies of 98.8% (Without Auxiliary) and 98.5% (incl. 10W Aux. Power) ─ High Efficiency Over Extremely Wide Parameter Range ─ ZVS in Most Operating Points
► Experimental Verification (2)
■ Very High Efficiency Despite High Functionality
76/110
2015
WiPDA
─ Average Error 2.5% ─ Maximum Error 7.8% ─ Widely Varying Mix of Loss Contributions
► Experimental Verification (3)
■ Very High Model Accuracy
77/110
2015
WiPDA
─ Supports Calculated Loss Modeling ─ Temperatures Generally Underestimated Wiring, Thermal Coupling
► Experimental Verification (4) ■ High Accuracy of Thermal Modeling
78/110
2015
WiPDA
─ Non-Linear Switching-Transitions ─ Incomplete ZVS Transitions
► Experimental Verification (5) ■ Accuracy Prediction of Voltage and Current Waveforms
79/110
2015
WiPDA
─ Prototype Development
* No Optimization Routine * Target Power Density of 2.0 kW/dm3
─ Improvements with Advanced Multi-Objective Optimization * 0.3% Higher Eff. @ Same Volume/Costs * 40% Lower Volume and 20% Lower Costs @ Same Efficiency
► Experimental Verification (6) ■ Comparison to Pareto Surface
80/110
2015
WiPDA
► Conclusions Example I
■ 3L-DAB Clearly Superior over 5L-DAB
─ More Efficient (Chip Area Utilization) ─ Higher Power Density (Capacitors) ─ Lower Costs (Gate Drivers) ─ Much Simpler Reliability ─ High Functionality (Voltage Range, Galv. Isolation, Bidir.) @ High Efficiency ─ Could not be Achieved w/o SiC
■ ZVS
─ Difficult to Achieve at Low Load and/or High Switching Frequencies ─ Parasitic Capacitances (Semicond. Package (!) to Heat Sink, Magnetics, PCB Layout) Become Highly Important Due to Required Add. Charge
■ Usefulness of Multi-Objective Optimization Routine
─ High Accuracy of Models ─ Improvements for Prototype Revealed
81/110
2015
WiPDA
Converter Optimization Example II
DC/AC PV Application Topologies/Modulation Schemes
Materials/Components Optimization
Pareto Surfaces LCC Post-Processing
82/110
2015
WiPDA
■ Advancements in PV Converter Design and Development
─ 1990s – 2000s
* Main Focus on Efficiency * Improvements from 90% to >98% ─ 2010s
* Econom. Downturn and Slower Market Growth * Main Focus on Costs (!)
1992 η=93%
2007 η=96%
2011 η=99%
Future?
■ Ongoing Discussion on Whether and How SiC Can Improve PV-Inv. Performance (!)
► Motivation (1)
83/110
2015
WiPDA
■ Opportunities of SiC in PV Applications
(1) Same Sw. Frequ. and Higher Eff. @ Same Volume Costs? (2) Higher Sw. Frequ. and Lower Volume @ Same Eff. Costs? (3) Other Topologies/Modul. Schemes (e.g. Higher Voltages, ZVS Operation, 2-Level, etc…)
5kW 2-Level w/o DC/DC η=96.8% @ 48kHz η=93.0% @ 144kHz = 0.83 kW/dm3
■ State of Research
─ Only Very Few Contributions with Multi-Objective Optimization ─ Mostly Case Studies of Single Prototype and Single Frequency, Main Inductance etc.
► Systematic Multi-Objective Optimization Imperative!
Source: SMA Source: Fraunhofer ISE
► Optimal?
20.5kW 3-Level w/o DC/DC η=98.6% @ 16kHz = 0.17 kW/dm3 @ 52kg
► Motivation (2)
► Optimal?
84/110
2015
WiPDA
► Application and Goals
─ Single-Input/Single-MPP-Tracker Multi-String PV Converter ─ DC/DC Boost Converter for Wide MPP Voltage Range ─ Output EMI Filter ─ Typical Residential Application
■ Systematic Multi-Objective η-ρ-σ-Comparison of Si vs. SiC ■ Exploit Excellent Hard- AND Soft-Switching Capabilities of SiC ■ Find Useful Switching Frequency and Current Ripple Ranges ■ Find Appropriate Core Material
85/110
2015
WiPDA
■ All Si IGBT 3-Level PWM Inverter (3L-PWM)
► Topologies - Converter Stages
■ All SiC MOSFET 2-Level Double- Interleaved TCM- Inverter (2L-TCM)
■ All SiC MOSFET 2-Level PWM Inverter (2L-PWM)
86/110
2015
WiPDA
► Topologies - Filter Stages
■ 2-Stage DM & CM Filter for 2L-PWM and 3LP-WM
■ 2-Stage DM & CM Filter for 2L-TCM ■ TCM Inductor Acting as DM & CM Inductance
87/110
2015
WiPDA
► Modulation Schemes - PWM Converters ■ Three-Level PWM Inverter (3L-PMW)
─ Symmetric Boost Converter ─ Interleaved Operation ─ Part. Compensation of LF DC-Link Midpoint Variation
─ 3-Level T-Type Converter ─ 3-Level PWM Modulation ─ 3rd Harmonic Injection
─ Standard DC/DC Booster ─ Standard Modulation
─ 2-Level Converter ─ 2-Level PWM Modulation ─ 3rd Harmonic Injection
■ Two-Level PWM Inverter (2L-PMW)
88/110
2015
WiPDA
► Modulation Schemes - TCM Converter
─ 2-Level/Double Interleaved Booster ─ Interleaved TCM Operation ─ Turn-Off of Branch in Partial Load
─ 2-Level/Double Interleaved ─ Interleaved TCM Operation ─ Turn-Off of Branch in Partial Load
─ ZVS for All Sw. Transitions ─ Variable fsw ─ Imin to Limit fsw ─ Losses Due to Imin @ Low Loads
■ Two-Level TCM Inverter (2L-TCM)
■ TCM Operating Principle
89/110
2015
WiPDA
► Components and Materials ►
2L-TCM
─ 16 x CREE SiC MOSFET 80 m 1200 V
─ Optimized Al Heat Sinks ─ Range of Sanyo Low Power Long Life DC Fans
─ METGLAS 2605SA1 Amorphous Iron C Cores ─ Solid Round Wire
─ EPCOS MKP DC Film Capacitors 575V and 1100 V for MPP Cap. ─ EPCOS Long Life Al Electrolytic Capacitors 500 V for DC-Link Cap.
► 2L-PWM
─ 7 x CREE SiC MOSFET 80 m 1200 V ─ 1 x CREE SiC Schottky Diode 20 A 1200 V
3L-PWM
─ 6 x Infineon Si IGBT H3 25 A 1200 V / PiN Diode ─ 6 x Infineon Si IGBT T&F 30 A 600 V / PiN Diode ─ 2 x Infineon Si IGBT T&F 30 A 600 V ─ Infineon Si PiN Diode 45 A 600 V
─ EPCOS N87 Ferrite E Cores ─ Litz Wire With Range of Strand Diameters
Or
─ EPCOS X2 (DM/CM) and Y2 (CM) EMI Capacitors ─ Magnetics KoolMu Gapless Powder Cores / Solid Round Wire (DM) ─ VAC Vitroperm 250F/500F Nanocrystalline Toroid Cores / Solid Round Wire (CM)
Filt
er
DC
Caps
M
ain
Indu
ct.
Cool
ing
Syst
em
Pow
er
Sem
icon
duct
ors
►
90/110
2015
WiPDA
► Global Optimization Routine
■ Dependent Design Variables
─ Main Inductances Function of fsw and IL,maxpp ─ Filter Components Based on CISPR Class B
■ European Efficiency
v ─ Add. Weighted for {525, 575, 625} V MPP Voltage
■ Independent Design Variables ─ 3L-PWM
─ 2L-PWM
─ 2L-TCM
91/110
2015
WiPDA
► Optimization Results - Pareto Surfaces (1)
─ No Pareto-Optimal Designs for fsw,min> 60 kHz ─ No METGLAS Amorphous Iron Designs
─ Pareto-Optimal Designs for Entire Considered fsw Range ─ No METGLAS Amorphous Iron Designs
─ Pareto-Optimal Designs for Entire Considered fsw Range ─ METGLAS Amorphous Iron and Ferrite Designs
92/110
2015
WiPDA
─ Compact Designs with Amorphous Core Material @ Low Ripples
─ Cheap Designs with Ferrite @ High Ripples Despite Larger Volume
■ 3L-PWM Core Material
─ Only Ferrite for 2L-TCM Due Large HF Excitations
─ Expected Result
■ 2L-TCM Core Material
─ Ferrite @ High Ripples Cheaper AND Smaller - Unexpected Result (!)
─ Amorphous Core Material too High Losses Already @ Low Ripples, High Flux Density Not Exploited
■ 2L-PWM Core Material
► Optimization Results - Pareto Surfaces (2)
93/110
2015
WiPDA
► Optimization Results – Component Breakdowns (1)
■ Semiconductor Losses Clearly Dominating (35 to 70%)
94/110
2015
WiPDA
► Optimization Results – Component Breakdowns (2)
■ DC Caps of 3L-PWM Largest Because of Midpoint Variation / Balancing
95/110
2015
WiPDA
■ Higher Gate Driver Costs (incl. in Aux.) of 3L-PWM Compensates Lower Si Semicond. Costs
► Optimization Results – Component Breakdowns (3)
96/110
2015
WiPDA
► Optimization Results - Semiconductor Losses
─ 2L-TCM
* Wide Sw. Frequency Range / Lower Imin Results in Lower Conduction Losses ─ 2L-PWM
* High Ripple Operation Lower Switching Losses Due ZVS ─ 3L-PWM
* No ZVS for IGBTs * High Ripples are Causing Higher Cond. Losses
■ Sensitivities of Semiconductor Losses
97/110
2015
WiPDA
► Extension to Multi-Objective Optimization Approach
► Which is the Best Solution Weighting , , σ, e.g. in Form of Life-Cycle Costs (LCC)? ► How Much Better is the Best Design? ► Optimal Switching Frequency?
■ Performance Space Analysis ─ 3 Performance Measures: , , σ ─ Reveals Absolute Performance Limits / Trade-Offs Between Performances
■ LCC Analysis ─ Post-Processing of Pareto-Optimal Designs ─ Determination of Min.-LCC Design ─ Arbitrary Cost Function Possible
98/110
2015
WiPDA
─ Simple Life-Cycle Costs (LCC) Function for Mapping into 1D Cost Space ─ Initial Costs, Capital Costs and Lost Revenue (=Losses) Based on Net-Present-Value (NPV) Analysis
► Post-Processing
■ LCC – Analysis (1)
─ Assumptions
99/110
2015
WiPDA
► Post-Processing
─ 22% Lower LCC than 3L-PWM ─ 5% Lower LCC than 2L-TCM ─ Simplest Design ─ Probably Highest Reliability ─ Volume Advantage Not Considered Yet (Housing!)
■ Best System 2L-PWM @ 44kHz & 50% Ripple
■ LCC – Analysis (2)
100/110
2015
WiPDA
► Conclusions - Example II
■ SiC Systems Superior to State-of-The-Art Si System ─ Generally Higher Efficiency and Power Density of SiC ─ Initial Costs only Marginally Lower (SiC 2L-PWM) or Higher (SiC 2L-TCM) ─ TCM Operated System More Complex but With Highest Potential for Further Improvements
■ LCC Analysis to Determine Optimal Design ─ SiC 2L-PWM @ 44 kHz vs. Si 3L-PWM @ 18 kHz 22% Lower LCC of SiC ─ Initial Costs 5% Lower ─ Smaller Housing and Higher Reliability Not Considered Yet
■ Usefulness of Multi-Objective Optimization Routine ─ SiC can Improve , , and σ Simultaneously ─ Optimal Switching Frequencies Lower than in Previous Publications
─ Results/Findings Not Possible with -, - or --Optimizations or Single Prototypes
101/110
2015
WiPDA
Conclusions ■
102/110
2015
WiPDA
► Overall Summary
■ Only Full System Level η-ρ-σ-Optimization Reveals Full Adv. of SiC (!) * Adv. Cannot be Identified for 1:1 Replacement or only 1D-Optimization ■ Rel. Low Optimum SiC Sw. Frequencies Calculated Compared to Literature * 44kHz for 2L-SiC Inverter vs. 18kHz for 3L-Si-IGBT Inverter * Frequently Incomplete Models Employed in Publications ■ Advantages of SiC Concerning Efficiency, Power Density & Costs * Lower System Complexity (2L vs. 3L) / Higher Reliability * Saving in Passives Overcompensates Higher SiC Costs
■ SiC Allows Massive η-ρ-Gain vs. 1200V Si for High-Frequ. DC/DC Converters * Design for Minim. Parasitic Cap. to Ensure ZVS @ Low Effort * Research on HF Magnetics / TCM ZVS Schemes / Packaging Mandatory
─ Higher Efficiency / Power Density @ Same Costs ─ Lower Complexity / Higher Reliability ─ Higher Functionality SiC
103/110
2015
WiPDA
Multi-Domain Modeling /
Simulation/ Optimization
Hardware Prototyping
20%
80%
2015
2025
80%
20%
► Future Design Process
■ Main Challenges: Modeling (EMI, etc.) & Transfer to Industry
■ Reduces Time-to-Market ■ More Application Specific Solutions (PCB, Power Module, and even Chips) ■ Only Way to Understand Mutual Dependencies of Performances / Sensitivities (!) ■ Simulate What Cannot Any More be Measured (High Integration Level)
104/110
2015
WiPDA
Future Research
105/110
2015
WiPDA
■ Consider Converters like “Integrated Circuits” ■ Extend Analysis to Converter Clusters / Power Supply Chains / etc.
─ “Converter” “Systems” (Microgrid) or “Hybrid Systems” (Autom. / Aircraft) ─ “Time” “Integral over Time” ─ “Power” “Energy”
─ Power Conversion Energy Management / Distribution ─ Converter Analysis System Analysis (incl. Interactions Conv. / Conv. or Load or Mains) ─ Converter Stability System Stability (Autonom. Cntrl of Distributed Converters) ─ Cap. Filtering Energy Storage & Demand Side Management ─ Costs / Efficiency Life Cycle Costs / Mission Efficiency / Supply Chain Efficiency ─ etc.
► Future Challenges
106/110
2015
WiPDA
► New Power Electronics Systems Performance Figures/Trends
─ Power Density [kW/m2] ─ Environm. Impact [kWs/kW] ─ TCO [$/kW] ─ Mission Efficiency [%] ─ Failure Rate [h-1]
■ Complete Set of New Performance Indices
►
►
Supply Chain &
►
107/110
2015
WiPDA
► References [1] J. W. Kolar, J. Biela, S. Waffler, T. Friedli, U. Badstübner, "Performance Trends and Limitations of Power Electronic Systems,“ Invited Plenary Paper at the 6th International Conference on Integrated Power Electronics Systems (CIPS 2010), Nuremberg, Germany, March 16-18, 2010.
[2] J. W. Kolar, F. Krismer, H. P. Nee, "What are the "Big CHALLENGES" in Power Electronics?,“ Presentation at the 8th Intern. Conf. of Integrated Power Electronics Systems (CIPS 2014), Nuremberg, Germany, February 25-27, 2014.
[3] J. W. Kolar, U. Drofenik, J. Biela, M. L. Heldwein, H. Ertl, T. Friedli, S. D. Round, "PWM Converter Power Density Barriers,“ Proceedings of the 4th Power Conversion Conference (PCC 2007), Nagoya, Japan, CD-ROM, ISBN: 1- 4244-0844-X, April 2-5, 2007.
[4] R. M. Burkart, J. W. Kolar, "Comparative Evaluation of SiC and Si PV Inverter Systems Based on Power Density and Efficiency as Indicators of Initial Costs and Operating Revenue,“ Proceedings of the 14th IEEE Workshop on Control and Modeling for Power Electronics (COMPEL 2013), Salt Lake City, USA, June 23-26, 2013.
[5] R. M. Burkart, J. W. Kolar, "Component Cost Models for Multi-Objective Optimizations of Switched-Mode Power Converters,“ Proceedings of the IEEE Energy Conversion Congress and Exposition (ECCE USA 2013), Denver, Colorado, USA, September 15-19, 2013.
[6] R. M. Burkart, H. Uemura, J. W. Kolar, "Optimal Inductor Design for 3-Phase Voltage-Source PWM Converters Considering Different Magnetic Materials and a Wide Switching Frequency Range,“ Proceedings of the International Power Electronics Conference - ECCE Asia (IPEC 2014), Hiroshima, Japan, May 18-21, 2014.
[7] P. A. M. Bezerra, F. Krismer, R. M. Burkart, J. W. Kolar, "Bidirectional Isolated Non-Resonant DAB DC-DC Converter for Ultra-Wide Input Voltage Range Applications,“ Proceedings of the IEEE International Power Electronics and Application Conference and Exposition (PEAC 2014), Shanghai, China, November 5-8, 2014.
[8] M. Kasper, R. M. Burkart, G. Deboy, J. W. Kolar, "ZVS Condition and ZVS Switching Losses Revisited,“ IEEE Transactions on Industrial Electronics, submitted for review.
[9] R. M. Burkart, J. W. Kolar, "η-ρ-σ Pareto-Optimization of All- SiC Multi-Level Dual Active Bridge Topologies with Ultra-Wide Input Voltage Range,“ IEEE Transactions on Power Electronics, submitted for review.
[10] R. M. Burkart, C. Dittli, J. W. Kolar, "Comparative Life-Cycle-Cost Analysis of Si and SiC PV Converter Systems Based on Advanced η-ρ-σ Multi-Objective Optimization Techniques,“ IEEE Transactions on Power Electronics, submitted for review.
108/110
2015
WiPDA
Johann W. Kolar is a Fellow of the IEEE and is currently a Full Professor and the Head of the Power Electronic Systems Laboratory at the Swiss Federal Institute of Technology (ETH) Zurich. He has proposed numerous novel PWM converter topologies, and modulation and control concepts and has supervised over 50 Ph.D. students. He has published over 650 scientific papers in international journals and conference proceedings and 3 book chapters, and has filed more than 120 patents. He received 21 IEEE Transactions and Conference Prize Paper Awards, the 2014 IEEE Middlebrook Award, and the ETH Zurich Golden Owl Award for excellence in teaching. The focus of his current research is on ultra-compact and ultra-efficient SiC and GaN converter systems, wireless power transfer, Solid-State Transformers, Power Supplies on Chip, and ultra-high speed and bearingless motors.
► About the Speakers
Ralph M. Burkart received his M.Sc. degree in electrical engineering from the Federal Institute of Technology (ETH), Zurich, Switzerland, in 2011. During his studies, he majored in power electronics, electrical machines and control engineering. In the framework of his Master Thesis he designed and implemented a high-dynamic inverter system for active magnetic bearings in an ultra-high speed electrical drive system. Since 2011, he has been a Ph.D. student at the Power Electronic Systems Laboratory at ETH Zurich. His main research area is multi-domain modeling of power electronics components and multi-objective optimization of photovoltaic DC/DC and DC/AC converter systems employing SiC power semiconductors.
109/110
2015
WiPDA
Thank You!
110/110
2015
WiPDA
Questions