VCSEL Fabrication Processing The following is pictorial description of the fabrication process for oxidized VCSELs. A detailed description of each step is contained in “VCSEL Fab Details.ppt” This work was performed in Micro and Nanotechnology Laboratory at the University of Illinois by members of the Photonic Device Research Group
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VCSEL Fabrication Processing
The following is pictorial description of the fabrication process for oxidized VCSELs.
A detailed description of each step is contained in “VCSEL Fab Details.ppt”
This work was performed in Micro and Nanotechnology Laboratory
at the University of Illinois
by members of the Photonic Device Research Group
Photonic Device Research Group
p-DBR
n-DBR
n-GaAs substrate
VCSEL fabrication – Bare wafer
CleaveLabel substrate backsideClean
Photonic Device Research Group
p-DBR
n-DBR
n-GaAs substrate
VCSEL fabrication – Backside contact
Target: 40 nm AuGe / 20 nm Ni / 150 nm Au
Photonic Device Research Group
p-DBR
n-DBR
n-GaAs substrate
PR
VCSEL fabrication – Spin PR
Degrease /N2 dry /Dehydration bakeHMDS (can spin-on or vapor prime)Spin on photoresist (usually 4330)
Photonic Device Research Group
p-DBR
n-DBR
n-GaAs substrate
PR
VCSEL fabrication – Top contact lithography
4330 lithography
Photonic Device Research Group
p-DBR
n-DBR
n-GaAs substrate
PR
Photonic Device Research Group
VCSEL fabrication – Metal deposition
O2 Plasma (300W – 3 min)1:10 NH4OH:DI dip (15 sec)Flowing DI rinse (10 min)N2 dry, inspect, load, evaporateTarget: 15 nm Ti / 150 nm Au