IKA06N60T TRENCHSTOP™ Series IFAG IPC TD VLS 1 Rev. 2.5 20.09.2013 Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed Low EMI Very soft, fast recovery anti-parallel Emitter Controlled HE diode Qualified according to JEDEC 1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Applications Washing Machine Inverter and Variable Speed Drive Type V CE I C V CE(sat),Tj=25°C T j,max Marking Code Package IKA06N60T 600V 6A 1.5V 175C K06T60 PG-TO220-3 (FullPAK) Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage, Tj ≥ 25C V CE 600 V DC collector current, limited by Tjmax TC = 25C TC = 100C I C 10 6.2 A Pulsed collector current, tp limited by Tjmax I Cpuls 18 Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1μs - 18 Diode forward current, limited by Tjmax TC = 25C TC = 100C I F 10.2 6.5 Diode pulsed current, tp limited by Tjmax I Fpuls 18 Gate-emitter voltage V GE 20 V Short circuit withstand time 2) VGE = 15V, VCC 400V, Tj 150C t SC 5 s Power dissipation TC = 25C P tot 28 W Operating junction temperature T j -40...+175 C Storage temperature T stg -55...+150 Isolation voltage V isol 2500 V rms 1 J-STD-020 and JESD-022 2) Allowed number of short circuits: <1000; time between short circuits: >1s. G C E PG-TO220-3 (FullPAK)
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IKA06N60T TRENCHSTOP™ Series
IFAG IPC TD VLS 1 Rev. 2.5 20.09.2013
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Features
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed
Low EMI
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications
Washing Machine
Inverter and Variable Speed Drive
Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Code Package
VGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic (VCE=20V)
Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
IKA06N60T TRENCHSTOP™ Series
IFAG IPC TD VLS 6 Rev. 2.5 20.09.2013
t, S
WIT
CH
ING
TIM
ES
0A 3A 6A 9A 12A 15A1ns
10ns
100ns
tr
td(on)
tf
td(off)
t, S
WIT
CH
ING
TIM
ES
1ns
10ns
100ns
tf
tr
td(off)
td(on)
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, rG = 23Ω, Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, IC = 6A, Dynamic test circuit in Figure E)
t, S
WIT
CH
ING
TIM
ES
50°C 100°C 150°C1ns
10ns
100ns
tr
tf
td(on)
td(off)
VG
E(t
h),
GA
TE-E
MIT
T T
RS
HO
LD
VO
LT
AG
E
-50°C 0°C 50°C 100°C 150°C0V
1V
2V
3V
4V
5V
6V
min.
typ.
max.
TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 6A, rG = 23Ω, Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.18mA)
IKA06N60T TRENCHSTOP™ Series
IFAG IPC TD VLS 7 Rev. 2.5 20.09.2013
E,
SW
ITC
HIN
G E
NE
RG
Y L
OS
SE
S
0A 2A 4A 6A 8A 10A0,0 mJ
0,1 mJ
0,2 mJ
0,3 mJ
0,4 mJ
0,5 mJ
0,6 mJ
Ets*
Eon
*
*) Eon
and Ets include losses
due to diode recovery
Eoff
E,
SW
ITC
HIN
G E
NE
RG
Y L
OS
SE
S
0,0 mJ
0,1 mJ
0,2 mJ
0,3 mJ
0,4 mJ
Ets*
Eon
*
*) Eon
and Ets include losses
due to diode recovery
Eoff
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=175°C, VCE=400V, VGE=0/15V, rG=23Ω, Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, IC = 6A, Dynamic test circuit in Figure E)
E,
SW
ITC
HIN
G E
NE
RG
Y L
OS
SE
S
50°C 100°C 150°C0,0mJ
0,1mJ
0,2mJ
0,3mJ
0,4mJ
Ets*
Eon
*
*) Eon
and Ets include losses
due to diode recovery
Eoff
E,
SW
ITC
HIN
G E
NE
RG
Y L
OS
SE
S
200V 300V 400V 500V0,0mJ
0,1mJ
0,2mJ
0,3mJ
0,4mJ
0,5mJ
Ets*
Eon
*
*) Eon
and Ets include losses
due to diode recovery
Eoff
TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=400V, VGE = 0/15V, IC = 6A, rG = 23Ω, Dynamic test circuit in Figure E)
Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175°C, VGE = 0/15V, IC = 6A, rG = 23Ω, Dynamic test circuit in Figure E)
IKA06N60T TRENCHSTOP™ Series
IFAG IPC TD VLS 8 Rev. 2.5 20.09.2013
VG
E,
GA
TE-E
MIT
TE
R V
OLT
AG
E
0nC 10nC 20nC 30nC 40nC 50nC0V
5V
10V
15V
480V
120V
c,
CA
PA
CIT
AN
CE
0V 10V 20V
10pF
100pF
1nF
Crss
Coss
Ciss
QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge (IC=6 A)
Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)
I C(s
c), s
hort
circu
it C
OLLE
CT
OR
CU
RR
EN
T
12V 14V 16V 18V0A
20A
40A
60A
80A
t SC,
SH
OR
T C
IRC
UIT
WIT
HS
TA
ND
TIM
E
10V 11V 12V 13V 14V0µs
2µs
4µs
6µs
8µs
10µs
12µs
VGE, GATE-EMITTETR VOLTAGE VGE, GATE-EMITETR VOLTAGE
Figure 19. Typical short circuit collector current as a function of gate-emitter voltage
(VCE 400V, Tj 150C)
Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=400V, start at TJ=25°C, TJmax<150°C)
Figure 22. Diode transient thermal impedance as a function of pulse width (D=tP/T)
t rr, R
EV
ER
SE
RE
CO
VE
RY
TIM
E
200A/µs 400A/µs 600A/µs 800A/µs0ns
50ns
100ns
150ns
200ns
250ns
TJ=25°C
TJ=175°C
Qrr,
RE
VE
RS
E R
EC
OV
ER
Y C
HA
RG
E
200A/µs 400A/µs 600A/µs 800A/µs0,0µC
0,1µC
0,2µC
0,3µC
0,4µC
0,5µC
TJ=25°C
TJ=175°C
diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as a function of diode current slope (VR = 400V, IF = 6A, Dynamic test circuit in Figure E)
Figure 24. Typical reverse recovery charge as a function of diode current slope (VR = 400V, IF = 6A, Dynamic test circuit in Figure E)
R , ( K / W ) , ( s )
0.381 1.867*10-2 6.53*10
-2
2.57 1.350
0.645 2.208*10-3
1.454 5.474*10-4
0.062 5.306*10-5
0.186 5.926*10-1
C1=1/R1
R1 R2
C2=2/R2
R , ( K / W ) , ( s ) 0.403 1.773*10
-2 6.53*10
-2
2.57 1.346
0.938 1.956*10-3
2.33 4.878*10-4
0.071 4.016*10-5
0.188 5.684*10-1
C1=1/R1
R1 R2
C2=2/R2
IKA06N60T TRENCHSTOP™ Series
IFAG IPC TD VLS 10 Rev. 2.5 20.09.2013
I rr, R
EV
ER
SE
RE
CO
VE
RY
CU
RR
EN
T
200A/µs 400A/µs 600A/µs 800A/µs0A
2A
4A
6A
8A
TJ=25°C
TJ=175°C
di rr
/dt,
DIO
DE
PE
AK
RA
TE
OF
FA
LL
OF
RE
VE
RS
E R
EC
OV
ER
Y C
UR
RE
NT
200A/µs 400A/µs 600A/µs 800A/µs0A/µs
-100A/µs
-200A/µs
-300A/µs
-400A/µs
-500A/µsT
J=25°C
TJ=175°C
diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current as a function of diode current slope (VR = 400V, IF = 6A, Dynamic test circuit in Figure E)
Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR = 400V, IF = 6A, Dynamic test circuit in Figure E)
I F,
FO
RW
AR
D C
UR
RE
NT
0,0V 0,5V 1,0V 1,5V 2,0V0A
2A
4A
6A
8A
10A
25°C
TJ=175°C
VF,
FO
RW
AR
D V
OLT
AG
E
0°C 50°C 100°C 150°C0,0V
0,5V
1,0V
1,5V
2,0V
6A
IF=12A
3A
VF, FORWARD VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 27. Typical diode forward current as a function of forward voltage
Figure 28. Typical diode forward voltage as a function of junction temperature
IKA06N60T TRENCHSTOP™ Series
IFAG IPC TD VLS 11 Rev. 2.5 20.09.2013
Please refer to mounting instructions
PG-TO220-3 (FullPAK)
IKA06N60T TRENCHSTOP™ Series
IFAG IPC TD VLS 12 Rev. 2.5 20.09.2013
Ir r m
90% Ir r m
10% Ir r m
di /dtF
tr r
IF
i,v
tQS
QF
tS
tF
VR
di /dtr r
Q =Q Qr r S F
+
t =t tr r S F
+
Figure C. Definition of diodes switching characteristics
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.