BFP420 Surface mount wideband silicon NPN RF bipolar transistor Product description The BFP420 is a low noise device based on a grounded emitter (SIEGET ™ ) that is part of Infineon’s established fourth generation RF bipolar transistor family. Its transition frequency f T of 25 GHz, high gain and low current characteristics make the device suitable for oscillators up to 10 GHz. It remains cost competitive without compromising on ease of use. Feature list • Minimum noise figure NF min = 1.1 dB at 1.8 GHz, 2 V, 5 mA • High gain G ms = 21 dB at 1.8 GHz, 2 V, 20 mA • OIP 3 = 22 dBm at 1.8 GHz, 2 V, 20 mA Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications • Radio-frequency oscillators • Broadband low noise amplifiers (LNAs) for CATV, DVB-T, DAB/DMB and FM/AM radio • LNAs for sub-1 GHz ISM band applications Device information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BFP420 / BFP420H6327XTSA1 SOT343 1 = B 2 = E 3 = C 4 = E AMs 3000 BFP420 / BFP420H6433XTMA1 10000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document Revision 2.0 www.infineon.com 2019-01-25
This document is posted to help you gain knowledge. Please leave a comment to let me know what you think about it! Share it to your friends and learn new things together.
Transcript
BFP420Surface mount wideband silicon NPN RF bipolar transistor
Product descriptionThe BFP420 is a low noise device based on a grounded emitter (SIEGET™) that is part ofInfineon’s established fourth generation RF bipolar transistor family. Its transitionfrequency fT of 25 GHz, high gain and low current characteristics make the devicesuitable for oscillators up to 10 GHz. It remains cost competitive without compromisingon ease of use.
Feature list• Minimum noise figure NFmin = 1.1 dB at 1.8 GHz, 2 V, 5 mA• High gain Gms = 21 dB at 1.8 GHz, 2 V, 20 mA• OIP3 = 22 dBm at 1.8 GHz, 2 V, 20 mA
Product validationQualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Potential applications• Radio-frequency oscillators• Broadband low noise amplifiers (LNAs) for CATV, DVB-T, DAB/DMB and FM/AM radio• LNAs for sub-1 GHz ISM band applications
Device informationProduct name / Ordering code Package Pin configuration Marking Pieces / ReelBFP420 / BFP420H6327XTSA1 SOT343 1 = B 2 = E 3 = C 4 = E AMs 3000
BFP420Surface mount wideband silicon NPN RF bipolar transistor
Table of contents
Datasheet 2 Revision 2.02019-01-25
1 Absolute maximum ratings
Table 1 Absolute maximum ratings at TA = 25 °C (unless otherwise specified)
Parameter Symbol Values Unit Note or test conditionMin. Max.
Collector emitter voltage VCEO – 4.5 V Open base
4.1 TA = -55 °C, open base
Collector emitter voltage VCES 15 E-B short circuited
Collector base voltage VCBO 15 Open emitter
Emitter base voltage VEBO 1.5 Open collector
Base current IB 9 mA –
Collector current IC 60
Total power dissipation 1) Ptot 210 mW TS ≤ 98 °C
Junction temperature TJ 150 °C –
Storage temperature TStg -55
Attention: Stresses above the max. values listed here may cause permanent damage to the device.Exposure to absolute maximum rating conditions for extended periods may affect devicereliability. Exceeding only one of these values may cause irreversible damage to the integratedcircuit.
1 TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB.
BFP420Surface mount wideband silicon NPN RF bipolar transistor
Absolute maximum ratings
Datasheet 3 Revision 2.02019-01-25
2 Thermal characteristics
Table 2 Thermal resistance
Parameter Symbol Values Unit Note or test conditionMin. Typ. Max.
Junction - soldering point RthJS – 250 – K/W –
0 25 50 75 100 125 1500
20
40
60
80
100
120
140
160
180
200
220
240
260
TS[°C]
P tot[m
W]
Figure 1 Total power dissipation Ptot = f(TS)
BFP420Surface mount wideband silicon NPN RF bipolar transistor
Emitter base capacitance CEB 0.55 VEB = 0.5 V, VCB = 0,f = 1 MHz,collector grounded
2 Maximum values not limited by the device but by the short cycle time of the 100% test.
BFP420Surface mount wideband silicon NPN RF bipolar transistor
Electrical characteristics
Datasheet 6 Revision 2.02019-01-25
3.3 Frequency dependent AC characteristics
Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C.
OUT
IN
Bias-T
Bias-TB
(Pin 1)
E C
E
VCTop View
VB
Figure 4 Testing circuit
Table 5 AC characteristics, VCE = 2 V, f = 1.8 GHz
Parameter Symbol Values Unit Note or test conditionMin. Typ. Max.
Power gain• Maximum power gain• Transducer gain
Gms|S21|2
–14
2117
– dBIC = 20 mA
Noise figure• Minimum noise figure NFmin
–1.1 IC = 5 mA
Linearity• 3rd order intercept point at output• 1 dB gain compression point at output
OIP3OP1dB
2212
dBmIC = 20 mA, ZS = ZL = 50 Ω
Note: Gms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated inthis chapter, the test fixture losses have been subtracted from all measured results. OIP3 valuedepends on termination of all intermodulation frequency components. Termination used for thismeasurement is 50 Ω from 0.1 MHz to 6 GHz.
BFP420Surface mount wideband silicon NPN RF bipolar transistor
Note: The curves shown in this chapter have been generated using typical devices but shall not beconsidered as a guarantee that all devices have identical characteristic curves. TA = 25 °C.
BFP420Surface mount wideband silicon NPN RF bipolar transistor
Electrical characteristics
Datasheet 15 Revision 2.02019-01-25
4 Package information SOT343
ALL DIMENSIONS ARE IN UNITS MMTHE DRAWING IS IN COMPLIANCE WITH ISO 128 &PROJECTION METHOD 1 [ ]
MOLD FLASH, PROTRUSION OR GATE BURRS OF 0.2 MMMAXIMUM PER SIDE ARE NOT INCLUDED
12
43
2±0.2
0.15
0.6-
0.05
0.3-
0.05
1.3
1.25±0.1
0.9±
0.1
0.1MAX
.
0.15
-0.05
0.1 MIN.
2.1±0.1
+0.10
+0.10
+0.10
A
0.1
0.2 A
0.1
3x
0.1
Figure 20 Package outline
Figure 21 Foot print
TYPE CODE
MONTHNOTE OF MANUFACTURER
YEAR
Figure 22 Marking layout example
ALL DIMENSIONS ARE IN UNITS MMTHE DRAWING IS IN COMPLIANCE WITH ISO 128 &PROJECTION METHOD 1 [ ]
4
2
8
2.15
0.2
1.1
2.3
INDEXMARKINGPIN 1
Figure 23 Tape dimensions
BFP420Surface mount wideband silicon NPN RF bipolar transistor
Package information SOT343
Datasheet 16 Revision 2.02019-01-25
Revision historyDocumentversion
Date ofrelease
Description of changes
Revision 2.0 2019-01-25 New datasheet layout, typical DC curves added.
BFP420Surface mount wideband silicon NPN RF bipolar transistor
Revision history
Datasheet 17 Revision 2.02019-01-25
TrademarksAll referenced product or service names and trademarks are the property of their respective owners.
IMPORTANT NOTICEThe information given in this document shall in noevent be regarded as a guarantee of conditions orcharacteristics (“Beschaffenheitsgarantie”) .With respect to any examples, hints or any typical valuesstated herein and/or any information regarding theapplication of the product, Infineon Technologieshereby disclaims any and all warranties and liabilities ofany kind, including without limitation warranties ofnon-infringement of intellectual property rights of anythird party.In addition, any information given in this document issubject to customer’s compliance with its obligationsstated in this document and any applicable legalrequirements, norms and standards concerningcustomer’s products and any use of the product ofInfineon Technologies in customer’s applications.The data contained in this document is exclusivelyintended for technically trained staff. It is theresponsibility of customer’s technical departments toevaluate the suitability of the product for the intendedapplication and the completeness of the productinformation given in this document with respect to suchapplication.
WARNINGSDue to technical requirements products may containdangerous substances. For information on the typesin question please contact your nearest InfineonTechnologies office.Except as otherwise explicitly approved by InfineonTechnologies in a written document signed byauthorized representatives of Infineon Technologies,Infineon Technologies’ products may not be used inany applications where a failure of the product orany consequences of the use thereof can reasonablybe expected to result in personal injury