Training Program AIXTRON Training Center AIXTRON SE Training Center (Germany) Kaiserstr. 98 · 52134 Herzogenrath · Germany [email protected]AIXTRON SINANO Demo Lab and Training Center (China) Dushu Lake Higher Education Town, Ruoshui Road 398, Suzhou Industrial Park, Suzhou, 215125, P.R. China [email protected]Cambridge, UK Suzhou, China Sunnyvale CA, USA AIXTRON Training Center Representation Lund, Sweden Herzogenrath Germany Headquarters Seoul, South Korea Tokyo, Japan Shanghai, China Hsinchu & Tainan, Taiwan
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Training ProgramAIXTRON Training Center
AIXTRON SE Training Center (Germany)Kaiserstr. 98 · 52134 Herzogenrath · Germany
AIXTRON SINANO Demo Lab and Training Center (China)Dushu Lake Higher Education Town, Ruoshui Road 398, Suzhou Industrial Park, Suzhou, 215125, P.R. China
AIXTRON Demo Lab and Training Center ............3
Training overview .......................................................4
Level A – MOCVD-Systems: Basics .......................5
Level B – MOCVD-Systems: Advanced stage .....6
Level C – Principles of MOCVD technology .........7
Level D – In-situ monitoring and ex-situ characterization of epitaxial layer ..........8
Level E – Process tuning ...........................................9
Level F – Device understanding and correlation to epitaxial growth ............ 10
Level G – Fab-automation, MES-interface ...........11
Content
In Germany and their new facilities in Suzhou, AIXTRON will provide customers and interested clients various training options and system demonstrations.
Training� From basic reactor handling to advanced process tuning for device optimization� For operators to advanced process engineers
Demonstration of AIXTRON system performance� G5 HT-TM (confi gurations: 56x2″, 14x4″, 8x6″)� CRIUS® II-XL (confi gurations: 69x2″, 19x4″)
Process development� Customer related process development
Location� Herzogenrath, Germany � Suzhou, China, cooperation with SINANO (Suzhou Institute of Nano-Tech and Nano-Bionics)
� In-situ characterization/monitoring: � Temperature � Wafer bowing � Growth rate and layer properties � Explanation of existing tools
� Ex-situ characterization of epitaxial layer: � Photoluminescence (PL): EtaMax Plato PL mapper � X-ray: Panalytical X’PERT PRO MRD XL � Electrical properties: Nanometrics Hall Effect Measurement System HL5500/5580 � Surface and defects: NIKON ECLIPSE LV150 Microscope
E
� Introduction of simulation � Use simulation results and theory to explain and understand process tuning � Theory on reactor behavior: planetary and showerhead
� Temperature tuning (CCS)
� Layer uniformity tuning (planetary)
� Run-to-run and system-to-system uniformity
� Yield improvement
Process tuningPlanetary Reactor® · Close Coupled Showerhead ®
In-situ monitoring and ex-situ characterization of epitaxial layer
10 11
F G
� LED Device Physics: Technology and Characterization
� Laser
� GaAs-HEMT basics
� Nitride-HEMT
� HFET-principles and upcoming challenges
� Tool Automation � Automated wafer handling � Defect reduction and yield improvement � Throughput � Overall productivity profi tability
� Factory Automation � MES - interface � MES integrated effi cient fab planning and operation � Productivity profi tability
*MES = Manufacturing Execution System
Fab-automationMES-interface*
Device understanding and correlation to epitaxial growth