TGD P-Channel Enhancement Mode Power MOSFET Description The TGD30P30G uses advanced trench technology to provide excellent R DS(ON) , This device is suitable for use as a load switch or in PWM applications. General Features ● V DS = -30V,I D = -30A R DS(ON) < 10mΩ @ V GS =-10V R DS(ON) < 15mΩ @ V GS =-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM applications ● Load switch ● Uninterruptible power supply Schematic diagram Top View Bottom View 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 30P30G 30P30G DFN5X6-8L Ø330mm 12mm 2500 units Absolute Maximum Ratings (T A =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous I D -30 A Drain Current-Pulsed (Note 1) I DM -160 A Maximum Power Dissipation P D 80 W Operating Junction and Storage Temperature Range T J ,T STG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 2) R θJC 1.56 /W ℃ D D D D D D D D S S S G G S S S Taiwan Goodark Technology Co.,Ltd http://www.goodark.asia TGD30P30G
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TGD P-Channel Enhancement Mode Power MOSFET · 2017-09-08 · TGD P-Channel Enhancement Mode Power MOSFET Description The TGD30P30G uses advanced trench technology to provide excellent
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TGD P-Channel Enhancement Mode Power MOSFET
DescriptionThe TGD30P30G uses advanced trench technology to provide
excellent RDS(ON), This device is suitable for use as a load
Forward Transconductance gFS VDS=-5V,ID=-15A 30 - - S
Dynamic Characteristics (Note4)
Input Capacitance Clss - 4222 - PF
Output Capacitance Coss - 480.5 - PF
Reverse Transfer Capacitance Crss
VDS=-15V,VGS=0V,
F=1.0MHz - 448.6 - PF
Switching Characteristics (Note 4)
Turn-on Delay Time td(on) - 15 - nS
Turn-on Rise Time tr - 11 - nS
Turn-Off Delay Time td(off) - 44 - nS
Turn-Off Fall Time tf
VDD=-15V, ID=-15A,
VGS=-10V,RGEN=3Ω
- 21 - nS
Total Gate Charge Qg - 81.3 - nC
Gate-Source Charge Qgs - 13.8 - nC
Gate-Drain Charge Qgd
VDS=-15V,ID=-15A,VGS=-10V
- 8.3 - nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-30A - - -1.2 V
Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production
Taiwan Goodark Technology Co.,Ltd
http://www.goodark.asia
TGD30P30G
Typical Electrical and Thermal Characteristics
Figure 1 Switching Test Circuit
TJ-Junction Temperature()
Figure 3 Power Dissipation
Vds Drain-Source Voltage (V)
Figure 5 Output Characteristics
VIN
VOUT
10%
10%
50% 50%
PULSE WIDTH
INVERTED
td(on)
90%
tr
ton
90%
10%
toff
td(off)tf
90%
VIN
VOUT
10%
10%
50% 50%
PULSE WIDTH
INVERTED
td(on)
90%90%
tr
ton
90%
10%
toff
td(off)tf
90%
Figure 2 Switching Waveforms
Vds Drain-Source Voltage (V)
Figure 4 Safe Operation Area
ID- Drain Current (A)
Figure 6 Drain-Source On-Resistance
PD
P
ower
(W)
I D-
Dra
in C
urre
nt (
A)
R
dson
On-
Res
ista
nce(
mΩ
)
I D-
Dra
in C
urre
nt (
A)
Taiwan Goodark Technology Co.,Ltd
http://www.goodark.asia
TGD30P30G
Vgs Gate-Source Voltage (V)
Figure 7 Transfer Characteristics
Vgs Gate-Source Voltage (V)
Figure 9 Rdson vs Vgs
Qg Gate Charge (nC)
Figure 11 Gate Charge
TJ-Junction Temperature()
Figure 8 Drain-Source On-Resistance
Vds Drain-Source Voltage (V)
Figure 10 Capacitance vs Vds
Vsd Source-Drain Voltage (V)
Figure 12 Source- Drain Diode Forward
I D-
Dra
in C
urre
nt (
A)
Rds
on O
n-R
esis
tanc
e(mΩ
) V
gs G
ate-
Sou
rce
Vol
tage
(V
)
Nor
mal
ized
On-
Res
ista
nce
C C
apac
itanc
e (p
F)
I s-
Rev
erse
Dra
in C
urr
en
t (A
)
Taiwan Goodark Technology Co.,Ltd
http://www.goodark.asia
TGD30P30G
Square Wave Pluse Duration(sec)
Figure 13 Normalized Maximum Transient Thermal Impedance