Page:P5 -P1 Plastic-Encapsulate Mosfets 8205A N-Channel Enhancement Mode Power MOSFET Description The 8205A uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● V DS = 19.5V,I D = 6A R DS(ON) < 37mΩ @ V GS =2.5V R DS(ON) < 27mΩ @ V GS =4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●Battery protection ●Load switch ●Power management G1 D2 G2 S2 D1 S1 Schematic diagram pin Assignment TSSOP-8 top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 19.5 V Gate-Source Voltage VGS ±10 V Drain Current-Continuous I D 6 A Drain Current-Pulsed (Note 1) I DM 25 A Maximum Power Dissipation P D 1.5 W Operating Junction and Storage Temperature Range T J ,T STG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 83 /W ℃ Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 19.5 21 V Zero Gate Voltage Drain Current I DSS V DS =19.5V,V GS =0V 1 μA GUANGDONG HOTTECH INDUSTRIAL CO., LTD
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NCE N-Channel Enhancement Mode Power MOSFET...2018/01/31 · 8205A N-Channel Enhancement Mode Power MOSFET Description The 8205A uses advanced trench technology to provide excellent
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Page:P5 -P1
Plastic-Encapsulate Mosfets
8205A N-Channel Enhancement Mode Power MOSFET
Description The 8205A uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
General Features VDS = 19.5V,ID = 6A
RDS(ON) < 37mΩ @ VGS=2.5V
RDS(ON) < 27mΩ @ VGS=4.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Application Battery protection
Load switch
Power management
G 1
D 2
G 2
S2
D 1
S 1 Schematic diagram
pin Assignment
TSSOP-8 top view
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter Symbol Limit Unit Drain-Source Voltage VDS 19.5 V
Gate-Source Voltage VGS ±10 V
Drain Current-Continuous ID 6 A
Drain Current-Pulsed (Note 1) IDM 25 A
Maximum Power Dissipation PD 1.5 W
Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150
Diode Forward Voltage (Note 3) VSD VGS=0V,IS=1.7A 0.75 1.2 V
Diode Forward Current (Note 2) IS 1.7 A
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production
8205A
GUANGDONG HOTTECH INDUSTRIAL CO., LTD
Page:P5 -P3
Plastic-Encapsulate Mosfets
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vgs Rgen
Vin
G
Vdd
RlVout
S
D
Figure 1:Switching Test Circuit
TJ-Junction Temperature()
Figure 3 Power Dissipation
Vds Drain-Source Voltage (V) Figure 5 Output CHARACTERISTICS
VIN
VOUT
10%
10%
50% 50%
PULSE WIDTH
INVERTED
td(on)
90%
tr
ton
90%
10%
toff
td(off)tf
90%
VIN
VOUT
10%
10%
50% 50%
PULSE WIDTH
INVERTED
td(on)
90%90%
tr
ton
90%
10%
toff
td(off)tf
90%
Figure 2:Switching Waveforms
TJ-Junction Temperature()
Figure 4 Drain Current
ID- Drain Current (A) Figure 6 Drain-Source On-Resistance