Synchrotron radiation XAFS studies of transition metal oxide thin films prepared by reactive magnetron sputtering Juris Purāns Institute of Solid State Physics University of Latvia Internet: http://www.cfi.lu.lv/exafs/ E-mail: [email protected]http://www1.cfi.lu.lv/teor/ERAF/ RSD2011 J.Purans – ISSP,LU RSD2011 J.Purans – ISSP,LU
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Synchrotron radiation XAFS studies of transition metal oxide thin films prepared by reactive magnetron sputtering Juris Purāns Institute of Solid State.
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Synchrotron radiation XAFS studies of transition metal oxide thin films prepared
by reactive magnetron sputtering
Juris PurānsInstitute of Solid State Physics University of Latvia
Presently HF magnetron sputtering is the background of the technology, but it is underproductive and quite expensive in comparison with DCand MF magnetron sputtering
DC magnetron deposition of Zn-based TCO-s: process control by plasma optical emission spectroscopy
R.Kalendarev, K.Vilnis, A.Ecis, M.Zubkins, A.Azens, J.PuransInstitute of Solid State Physics, University of Latvia, Riga, Latvia
The scope: the usefulness of plasma Optical Emission Spectroscopy (OES) for the sputtering process tuning has been investigated with the aim to ensure the process stability and reproducibility, and the quality of ZnO:Al films in terms of [minimized] electrical resistivity and [maximized] optical transmittance
400 500 600 700 800 900 10000
5000
10000
760 770 780 7900
500
1000
1500
2000
Ar
(763
.51n
m)
Zn
(481
.05n
m)
Inte
nsity
(co
unts
)
Inte
nsity
(co
unts
)
Wavelength (nm)
Wavelength (nm)
O (
777.
19,
777.
41,
777.
53 n
m)
Optical emission spectrum upon sputtering of a ZnAl target in an atmosphere of Argon and Oxygen RSD2011 J.Purans – ISSP,LURSD2011 J.Purans – ISSP,LU
Selected Zinc, Argon and Oxygen optical emission line intensities during the process conditioning and film deposition
Although the film resistivity data is not completely free from scattering [yet], the correlation between the values of the OES line intensities upon film deposition and the film properties confirms the usefulness of OES for the deposition process control of ZnO:Al films
Resistivity for ZnO:Al films deposited at different Zinc and Oxygen optical emission line intensity ratios.
Film resistivity as a function of Zinc optical emission line IZn/IZnmax ratio. The IZn/IZnmax ratio range corresponds to the oxygen flow range after the maximum in Zinc line intensity
Eiropas Reģionālās attīstības fonda Eiropas Reģionālās attīstības fonda 2.1.1.1.aktivitātes „Atbalsts zinātnei un pētniecībai” 2.1.1.1.aktivitātes „Atbalsts zinātnei un pētniecībai”