Supporting Information1 / 21 Supporting Information High-Color-Purity and Efficient SolutionProcessable Blue - Phosphorescent Light-Emitting Diodes with Pt(II) Complexes featuring
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1 / 21
Supporting Information
High-Color-Purity and Efficient Solution-Processable Blue
Phosphorescent Light-Emitting Diodes with Pt(II)
Complexes featuring 3ππ* Transition
Huili Ma,a Kang Shen,*ad Yipei Wu,a Fang Xia,a Feiling Yu,a Zhengyi Sun,a Chunyue Qian,a Qiming Peng,a Hong-Hai Zhang,a Cong You,a Guohua Xie,*b Xiao-Chun Hang,*a and Wei Huangac a Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergistic Innovation Center for Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, China. b Hubei Key Lab on Organic and Polymeric Optoelectronic Materials, Department of Chemistry, Wuhan University, Wuhan 430072, China. cShaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi’an 710072, China. dState Key Laboratory of Coordination Chemistry, Nanjing University.
Figure S4. CV curves of Pt(ppzOczpy-m), Pt(ppzOczpy-2m) and Pt(ppzOczpy-4m).
Table S3. Experimentally measured energy levels of Pt complexes.
Complex ES1a/ ET1b/ΔEST c (eV) HOMO/LUMO/ Eg (eV) d
Pt(ppzOczpy) 3.03/2.80/0.23 -5.29/-2.25/3.04
PtON1 3.01/2.80/0.21 -5.29/-2.26/3.03
Pt(ppzOczpy-m) 3.12/2.80/0.32 -5.32/-2.15/3.17
Pt(ppzOczpy-2m) 3.10/2.80/0.30 -5.27/-2.15/3.12
Pt(ppzOczpy-4m) 3.07/2.81/0.26 -5.30/-2.10/3.20 aExcitation energy of S1. bThe energy of T1. cEnergy gap between the lowest singlet and triplet states. dThe HOMO and LUMO levels were estimated by using Cp2Fe0/+ values of 4.8 eV below the vacuum level, and Eg = ELUMO- EHOMO.
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Computational simulations
Table S4. Theoretical simulated results of Pt(ppzOczpy-4m) conformers.a
Figure S10. Decay lifetimes of Platinum complexes measured at peak wavelength in
CH2Cl2 (a) and PMMA (b) at room temperature.
400 450 500 550 600 6500.0
2.0x105
4.0x105
6.0x105
8.0x105
Temperature
Pt(ppzOczpy) 5 wt% doped in PMMA
lum
inec
ent I
nten
sity
(a.u
.)
Wavelength (nm)
100 K 150 K 200 K 250 K 300 K 350 K 400 K
445 nm
475 nm
508 nm
(a)
400 450 500 550 600 650
0.0
0.2
0.4
0.6
0.8
1.0 Temperature
Temperature
Pt(ppzOczpy) 5 wt% doped in PMMA
Norm
alize
d In
tens
ity (a
.u.)
Wavelength (nm)
100 K 150 K 200 K 250 K 300 K 350 K 400 K
(b)
50 100 150 200 250 300 350 4000.0
0.2
0.4
0.6
0.8
1.0
PL Efficiency Radiative Decay Rate
Temperature (K)
Poto
lum
inec
ent E
fficic
ncy
(a.u
.)
0.5
1.0
1.5
2.0
2.5
Kr (X10
5 S-1)
(c)
0.8
1.2
1.6
2.0
100 200 300 400
Deca
y ra
te (1
/τ) (x
105 s
-1)
ObservedSimulated
(d)
Pt(ppzOczpy)5 wt% doped in PMMA
Temperature (K)
Figure S11. Temperature-dependent emission properties of Pt(ppzOczpy) (5 wt %) in
PMMA. Primary emission spectra (a) and decay lifetimes (d) were measured in situ.
Normalized emission spectra (b) and temperature-dependent quantum efficiency and
kr (c) were translated data from (a).
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400 450 500 550 600 6500.0
5.0x105
1.0x106
1.5x106
2.0x106
Temperature
Lum
ines
cent
Inte
nsity
(a.u
.)
Wavelength (nm)
100K 120K 150K 200K 250K 300K 350K 400K
PtON1 5 wt%doped in PMMA
(a)
400 450 500 550 600 650
0.0
0.2
0.4
0.6
0.8
1.0
Temperature
Temperature
Norm
alize
d In
tens
ity (a
.u.)
Wavelength (nm)
100K 120K 150K 200K 250K 300K 350K 400K
PtON1 5 wt% doped in PMMA
(b)
100 200 300 4000.0
0.2
0.4
0.6
0.8
1.0
Poto
lum
inec
ent E
fficic
ncy
PL Efficiency Radiative Decay Rate
Temperature (K)
(c)
1.0
1.5
2.0
2.5
3.0
3.5
Kr (X10
5 S-1)
100 200 300 400
1.6
2.0
2.4
2.8
3.2(d)
Deca
y ra
te (1
/τ) (x
105 s
-1)
Pt(ON1)5 wt% Doped in PMMA
Temperature (K)
ObservedSimulated
Figure S12. Temperature dependent emission properities of PtON1 (5 wt %) in PMMA. Primary emission spectra (a) and decay lifetimes (d) were measured in situ. Normalized emission spectra (b) and temperature-dependent quantum efficiency and kr (c) were translated data from (a).
Table S6. Kinetic parameters for the excited-states decay of Pt(ppzOczpy-4m),
Figure S13. Emission spectra at ambient temperature of Pt(ppzOczpy-4m) (5 wt% in
solid matrix and 10-5 M in solution).
400 450 500 550 600 6500.0
0.2
0.4
0.6
0.8
1.0
Norm
alize
d In
tens
ity (a
.u.)
Wavelength (nm)
2 % 5 % 10 % 20 % 30 % 50 %
(a)
Pt(ppzOczpy-4m)Doped in CzSi
Concentration
420 440 460 480 500 5200.0
0.2
0.4
0.6
0.8
1.0
5 10 15 20 25 30 350
1
2
3
4
5
6
0.12
Conc
entra
tion
(a.u
.)
Time (µs)
Exciton5.84
5 % Pt(ppzOczpy-4m) doped in PMMA
Time
Norm
alize
d In
tens
ity (a
.u.)
Wavelength (nm)
0-5.6 us 5.6-11.2 us 11.2-16.8 us 16.8-22.4 us 22.4-28 us 28-33.6 us
(b)
Figure S14. Normalized luminescent spectra of 2-50 wt% doping of Pt(ppzOczpy-4m) in CzSi (a), normalized time-dependent spectra of Figures 4e (b) and exciton relaxation curves (b, Insert graph).
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0 50
10-3
10-2
10-1
100 77K 100K 150K 200K 250K 300K 350K 400K
Norm
alize
d In
tens
ity (a
.u.)
Time (µs)
(a)
0 50 100
10-3
10-2
10-1
100
2% 5%10 % 20% 30% 50%
Norm
aliz
ed In
tens
ity (a
.u.)
Time (µs)
(b)
Figure S15. Decay lifetimes of Pt(ppzOczpy-4m). Temperature-dependent measurements (a) at 5 wt % doping concentration in PMMA and concentration-dependent measurements (b) at room temperature (291.5 K) in PMMA.
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Electroluminescence
Figure S16. Device structure series A: ITO/PEDOT:PSS (70 nm)/ CzSi:Pt(ppzOczpy-4m) (100-x:x, 40 nm)/DPEPO (10 nm)/TmPyPB (50 nm)/Liq (1 nm)/Al (100 nm), where x = 5, 10, 20 and 30. Electroluminescence (EL) spectra (a), current density–voltage curves (b), luminance–voltage curves (c) and curves of current efficiency (d), power efficiency (e) and EQE (f) versus current density.
Device structure series A: ITO/PEDOT:PSS (70 nm)/ CzSi:Pt(ppzOczpy-4m) (100-x:x, 40 nm)/DPEPO (10 nm)/TmPyPB (50 nm)/Liq (1 nm)/Al (100 nm). a
concentration of Pt(ppzOczpy-4m) doped in emissive layer in wt %. b voltage at 10 cd/m2. c Current efficiency (ηc). d Power efficiency (ηp). e External quantum efficiency (ηe) .