Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07 ATL-P-MN-0006 v.1 Development of non-inverting Silicon strip detectors for the ATLAS ID Upgrade ( H. Sadrozinski, P. Allport, N. Unno +25 Institutions)). “The goal of the program is the industrial pre- production of SSD optimized for sLHC operation and includes both short and long strips.” “In addition, the RD activity should take into account the needs of the module development program and plan to have sensors available on the required time-scale.” Outline: 1. Framework of R&D Program 2. Recent Results 3. Future Plans 4. ATLAS07 Submission to HPK SSD Development for ATLAS Upgrade Tracker
SSD Development for ATLAS Upgrade Tracker. ATL-P-MN-0006 v. 1 Development of non-inverting Silicon strip detectors for the ATLAS ID Upgrade ( H. Sadrozinski, P. Allport, N. Unno +25 Institutions)). - PowerPoint PPT Presentation
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ATL-P-MN-0006 v.1 Development of non-inverting Silicon strip detectors for the ATLAS ID Upgrade ( H. Sadrozinski, P. Allport, N. Unno +25 Institutions)).
“The goal of the program is the industrial pre-production of SSD optimized for sLHC operation and includes both short and long strips.”
“In addition, the RD activity should take into account the needs of the module development program and plan to have sensors available on the required time-scale.”
Continued Development of tools to support testing:Mate SCT hybrid (20ns ) with custom quick-disconnect Sensor boardWork on SCT DAQ: negative pulsesImprove thermal management
Testing of MICRON mini-SSD pre- and post-radIssue: Evaluate role of resistivity of waferFZ: ~20k-cm (Micron) vs. 8 k-cm (HPK), MCz ~ 2k-cm (Micron and HPK) Initially Depletion Voltage: FZ 60 V (Micron) vs. 140 V (HPK) MCz ~ 500 V (Micron and HPK)
Testing of ATLAS06, ATLAS07 (HPK), ATLASxx mini-SSDSurface condition pre- and post-rad (p, n, ): Optimize isolation and capacitanceCharge collection pre- and post-rad (p, n, ): Optimize wafer resistivity
Cooling of irradiated sensors required both for electrical and dynamic testing.Present mode of spilling LN2 into a thermal enclosure is reliable, but clumsy / wasteful.
- flux > 1012 n_eq/(cm2.s), downgradeable by reactor power
- TID ~ 100 kRad for 1014 n_eq/cm2 (> kRad/s)
- sample width ~60 mm, length ~150 mm
- bias & cooling - difficult
Suitable for irradiations of bare sensors, depending on the design we adopt (width !).
For modules need to be careful, activation issues might be serious at the target fluences. The sensors (Si, Al) cool down quite efficiently (days), so mounting on evaluation boards/modules could be done post-irradiation.
Wafer size 150 mm Thickness 320 µm Orientation <100> Type P Ingot FZ Resistivity >3 k cm Outer dimension 98.99x98.99 mm2
Sensitive implant edge dimension 96.99x96.99 mm2
Strip segments 4 Strip segement length (approximate) 24 mm Strip implant N Strip pitch 75.50 µm Strip implant Width 16 µm Strip bias resistor Polysilicon Strip bias resistnace (Rb) 1.5+/-0.5 M Strip readout coupling AC Strip readout metal Pure Aluminium Strip readout metal width 20 µm Strip AC coupling capacitance >20 pF/cm Strip isolation >2xRb at 1/2xVop Strip isolation method Individual p-stop Gap between strip segments <160µm (rail)
<70µm (no rail) Design operation voltage 800V Microdischarge onset voltage >600V Maximum operation voltage (*) 600V Radiation tolerance 9x1014 1-MeV neq/cm2
(*) The voltage rating of the extenal high voltage cable is 500V and tested 1 KV
• Schedule from HPK– Delivery Dec 07– Fabrication incl. testing (3 m) Sep 07– Acquiring wafers (2 m) Jul 07– Designing masks (2 m) Jul 07– Finalizing specifications in Jul 07– Wafer specification Beg Jun