SOT-23 Plastic-Encapsulate MOSFETS BSS123 N Channel MOSFET FEATURE SOT-23 Surface Mount Package High Density Cell Design for Extremely Low R DS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable APPLICATION Small Servo Motor Controls Power MOSFET Gate Drivers Switching Application ABSOLUTE MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Parameter Symbol Value Unit N-MOSFET Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ±20 V Continuous Drain Current (note 1) I D 0.17 A Pulsed Drain Current (tp=10us) I DM 0.68 A Continous Source-Drain Diode Current I S 0.17 A Power Dissipation P D 0.35 W Thermal Resistance from Junction to Ambient (note 1) R θJA 357 ℃/W Junction Temperature T J 150 ℃ Storage Temperature T STG -55~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) T L 260 ℃ MARKING Equivalent Circuit V (BR)DSS R DS(on) MAX I D 100 V 6Ω@10V 0.17A 10 Ω@4.5V 1. GATE 2. SOURCE 3. DRAIN 1 2 3 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD 1 www.jscj-elec.com Rev. - 1.0
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SOT-23 Plastic-Encapsulate MOSFETS SOT-23.pdf(BR)DSS R DS(on)MAX I D 100V 6Ω@10V 0.17A 10Ω@4.5V 1. GATE 2. SOURCE 3. DRAIN 1 2 3 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
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SOT-23 Plastic-Encapsulate MOSFETS
BSS123 N Channel MOSFET
FEATURE
SOT-23
Surface Mount Package
High Density Cell Design for Extremely Low RDS(ON)
Voltage Controlled Small Signal Switch
Rugged and Reliable
APPLICATION Small Servo Motor Controls
Power MOSFET Gate Drivers
Switching Application
ABSOLUTE MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Parameter Symbol Value Unit
N-MOSFET Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current (note 1) ID 0.17 A
Pulsed Drain Current (tp=10us) IDM 0.68 A
Continous Source-Drain Diode Current IS 0.17 A
Power Dissipation PD 0.35 W
Thermal Resistance from Junction to Ambient (note 1) RθJA 357 /W Junction Temperature TJ 150
Storage Temperature TSTG -55~+150
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) TL 260
MARKING Equivalent Circuit
V(BR)DSS RDS(on)MAX ID
100V6Ω@10V
0.17A10Ω@4.5V
1. GATE
2. SOURCE
3. DRAIN
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
1www.jscj-elec.com Rev. - 1.0
Parameter Symbol Test Condition Min Typ Max UnitSTATIC CHARACTERISTICS Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 100 V
Zero gate voltage drain current IDSS VDS =100V,VGS = 0V 1 µA
VDS =20V,VGS = 0V 10 nA
Gate-body leakage current IGSS VGS =±20V, VDS = 0V ±50 nA
Gate threshold voltage (note 2) VGS(th) VDS =VGS, ID =250µA 1 1.6 2.8 V
SymbolDimensions In InchesDimensions In Millimeters
0.950 TYP 0.037 TYP
SOT-23 Package Outline Dimensions
SOT-23 Suggested Pad Layout
4www.jscj-elec.com Rev. - 1.0
NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein.
Packaging Description: SOT-23 parts are shipped in tape. The carriertape is made from a dissipative (carbon filled)polycarbonate resin. The cover tape is a multilayerfilm (Heat Activated Adhesive in nature) primarilycomposed of polyester film, adhesive layer, sealant,and anti-static sprayed agent. These reeled parts instandard option are shipped with 3,000 units per 7"or 17.8cm diameter reel. The reels are clear in colorand is made of polystyrene plastic (anti-staticcoated).