SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD 1 V(BR)DSS RDS(on)MAX I D 20V 0.022 Ω @ 4.5V 6.0A 0.030 Ω @ 2.5V MARKING Equivalent Circuit S8205A SOT-23-6 Plastic-Encapsulate MOSFETS FEATURE TrenchFET Power MOSFET Excellent R DS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package Dual N-Channel MOSFET APPLICATION Battery Protection Load Switch Power Management SOT-23-6 ABSOLUTE MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V DS 20 Gate-Source Voltage V GS ±10 V Continuous Drain Current I D A Pulsed Drain Current (note 1) I DM 20 A Thermal Resistance from Junction to Ambient (note 2) R θJA 100 ℃/W Junction Temperature T J 150 ℃ Storage Temperature T STG -55~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) T L 260 ℃ V 6 S8205A Max Y :year code W :week code 8205A www.sztuofeng.com Dec,2019 V1.1
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SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD
1
V(BR)DSS RDS(on)MAX ID
20V0.022Ω @ 4.5V
6.0A0.030Ω @ 2.5V
MARKING
Equivalent Circuit
S8205A SOT-23-6 Plastic-Encapsulate MOSFETS
FEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package
Dual N-Channel MOSFET
APPLICATION Battery Protection Load Switch Power Management
SOT-23-6
ABSOLUTE MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Parameter Symbol Value Unit
Drain-Source Voltage VDS 20
Gate-Source Voltage VGS ±10 V
Continuous Drain Current ID A Pulsed Drain Current (note 1) IDM 20 A
Thermal Resistance from Junction to Ambient (note 2) RθJA 100 /W Junction Temperature TJ 150
Storage Temperature TSTG -55~+150
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) TL 260