PDFNWB5×6-8L-A DESCRIPTION FEATURES APPLICATIONS MARKING MAXIMUM RATINGS ( T a =25℃ unless otherwise noted ) Parameter Symbol Limit Unit ℃ ℃ ℃ ℃ CJAC20N06D Dual N-Channel Power MOSFET V (BR)DSS I D 17 22 EQUIVALENT CIRCUIT JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5×6-8L-A Plastic-Encapsulate MOSFETS Rev. - 1.0 ① ② ③ ⑥ ⑥ R DS(on) TYP 20N06D CJAC XX
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P D F NWB5×6-8L-A
DESCRIPTION
The CJAC20N06D provides excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
FEATURES
Excellent package for good heatdissipation
High-frequency switching and synchronous rectification
High density cell design for ultra low RDS(ON)
Fully characterized avalanche voltage andcurrent
APPLICATIONS
DC/DC converter
MARKING
CJAC20N06D = Part No. Solid dot=Pin1 indicator XX=Code
MAXIMUM RATINGS ( Ta=25 unless otherwise noted )
Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS Ñ20 V
Continuous Drain Current ID 20 A
Pulsed Drain Current IDM 80 A
Single Pulsed Avalanche Energy EAS 19 mJ
Power Dissipation PD 2 W
Thermal Resistance from Junction to Ambient RɗJA 62.5 /W
Junction Temperature TJ 150
Storage Temperature Range Tstg -55 ~+150 Lead Temperature for Soldering Purposes(1/8ôô from case for 10s) TL 260
CJAC20N06D Dual N-Channel Power MOSFET
V(BR)DSS ID
60V17mɋ@10V
20A22mɋ@4.5V
EQUIVALENT CIRCUIT
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
PDFNWB5×6-8L-A Plastic-Encapsulate MOSFETS
1 Rev. - 1.0www.jscj-elec.com
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①
②
③
⑥
⑥
R DS( on ) TYP
20N06DCJAC
XX
Parameter Symbol Test Condition Min Typ Max Unit
Off characteristics
Drain-source breakdown voltage 60 V
Zero gate voltage drain current IDSS VDS =60V, VGS =0V 1 µA
Gate-body leakage current IGSS VDS =0V, VGS =±20V ±100 nA
On characteristics
Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA 1.0 2.5 V
Drain-source diode forward voltage VSD VGS =0V, IS=10A 1.2 V
Continuous drain-source diode forward
currentIS 20 A
Pulsed drain-source diode forward current ISM 80 A
Notes:
MOSFET ELECTRICAL CHARACTERISTICS
aT =25 unless otherwise specified
2www.jscj-elec.com Rev. - 1.0
1.7
VGS = 0V, ID =250µA V(BR) DSS
2561
126.6
122
1.TC=25 Limited only by maximum temperature allowed.2.PW≤10μs, Duty cycle≤1%.3.EAS condition: VDD=30V,VGS=10V, L=0.1mH, Rg=25Ω Starting TJ = 25°.4.Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.5.Guaranteed by design, not subject to production.6.The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 .
Symbol Dimensions In Millimeters Dimensions In Inches
0.254 REF. 0.010REF.
P D F NWB5×6-8L-A
5www.jscj-elec.com Rev. - 1.0
NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein.