1 2 3 TO-247 1 2 3 TO-3PF TO-247 long leads 1 2 3 G(1) C(2, TAB) E(3) G1C2TE3 Features • Maximum junction temperature: T J = 175 °C • High speed switching series • Minimized tail current • Very low saturation voltage: V CE(sat) = 1.6 V (typ) @ I C = 40 A • Safe paralleling • Tight parameter distribution • Low thermal resistance Applications • Welding • Power factor correction • UPS • Solar inverters • Chargers Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGFW40H65FB STGW40H65FB STGWA40H65FB Trench gate field-stop 650 V, 40 A high speed HB series IGBT STGFW40H65FB, STGW40H65FB, STGWA40H65FB Datasheet DS9908 - Rev 8 - March 2021 For further information contact your local STMicroelectronics sales office. www.st.com
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12
3
TO-24712
3
TO-3PF
TO-247 long leads1
23
G(1)
C(2, TAB)
E(3)G1C2TE3
Features• Maximum junction temperature: TJ = 175 °C• High speed switching series• Minimized tail current• Very low saturation voltage: VCE(sat) = 1.6 V (typ) @ IC = 40 A• Safe paralleling• Tight parameter distribution• Low thermal resistance
Applications• Welding• Power factor correction• UPS• Solar inverters• Chargers
DescriptionThese devices are IGBTs developed using an advanced proprietary trench gatefield-stop structure. These devices are part of the new HB series of IGBTs, whichrepresent an optimum compromise between conduction and switching loss tomaximize the efficiency of any frequency converter. Furthermore, the slightly positiveVCE(sat) temperature coefficient and very tight parameter distribution result in saferparalleling operation.
Product status link
STGFW40H65FB
STGW40H65FB
STGWA40H65FB
Trench gate field-stop 650 V, 40 A high speed HB series IGBT
STGFW40H65FB, STGW40H65FB, STGWA40H65FB
Datasheet
DS9908 - Rev 8 - March 2021For further information contact your local STMicroelectronics sales office.
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time
VCE = 400 V, IC = 40 A, VGE = 15 V,RG = 5 Ω (see Figure 26. Test circuit forinductive load switching)
- 40 -ns
tr Current rise time - 13 -
(di/dt)on Turn-on current slope - 2413 - A/µs
td(off) Turn-off delay time - 142 -ns
tf Current fall time - 27 -
Eon (1) Turn-on switching energy - 498 -
µJEoff (2) Turn-off switching energy - 363 -
Ets Total switching energy - 861 -
td(on) Turn-on delay time
VCE = 400 V, IC = 40 A, VGE = 15 V,RG = 5 Ω, TJ = 175 °C (seeFigure 26. Test circuit for inductive loadswitching)
- 38 -ns
tr Current rise time - 14 -
(di/dt)on Turn-on current slope - 2186 - A/µs
td(off) Turn-off delay time - 141 -ns
tf Current fall time - 61 -
Eon (1) Turn-on switching energy - 1417 -
µJEoff (2) Turn-off switching energy - 764 -
Ets Total switching energy - 2181 -
1. Including the reverse recovery of the external diode. The diode is the same of the co-packed STGW40H65DFB.2. Including the tail of the collector current.
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and productstatus are available at: www.st.com. ECOPACK is an ST trademark.
4.1 TO-3PF package information
Figure 29. TO-3PF package outline
7627132_6
STGFW40H65FB, STGW40H65FB, STGWA40H65FBPackage information
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