This is information on a product in full production. December 2015 DocID026844 Rev 6 1/27 STGIPQ5C60T-HL, STGIPQ5C60T-HZ SLLIMM™ nano - 2 nd series IPM, 3-phase inverter, 5 A, 600 V short-circuit rugged IGBTs Datasheet - production data Features • IPM 5 A, 600 V 3-phase IGBT inverter bridge including 3 control ICs for gates driving and freewheeling diodes • 3.3 V, 5 V and 15 V TTL/CMOS inputs comparators with hysteresis and pull down/pull up resistors • Internal bootstrap diode • Optimized for low electromagnetic interference • Undervoltage lockout • Short-circuit rugged TFS IGBTs • Smart shutdown function • Interlocking function • Op-amp for advanced current sensing • Comparator for fault protection against overcurrent • NTC (UL 1434 CA 2 and 4) • Isolation rating of 1500 Vrms/min • Up to ±2 kV ESD protection (HBM C = 100 pF, R = 1.5 kΩ) Applications • 3-phase inverters for motor drives • Home appliances such as dish washer, refrigerator compressors, heating systems, air- conditioning fans, draining and recirculation pumps Description This second series of SLLIMM (small low-loss intelligent molded module) nano provides a compact, high performance AC motor drive in a simple, rugged design. It is composed of six improved short-circuit rugged trench gate field- stop IGBTs with freewheeling diodes and three half-bridge HVICs for gate driving, providing low electromagnetic interference (EMI) characteristics with optimized switching speed. The package is designed to allow a better and easy screw on heatsink, it is optimized for thermal performance and compactness in built-in motor applications, or other low power applications where assembly space is limited. This IPM includes an operational amplifier, completely uncommitted, and a comparator that can be used to design a fast and efficient protection circuit. SLLIMM™ is a trademark of STMicroelectronics. N2DIP-26L type Z N2DIP-26L type L Table 1. Device summary Order codes Marking Package Packaging STGIPQ5C60T-HL GIPQ5C60T-HL N2DIP-26L type L Tube STGIPQ5C60T-HZ GIPQ5C60T-HZ N2DIP-26L type Z Tube www.st.com
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This is information on a product in full production.
December 2015 DocID026844 Rev 6 1/27
STGIPQ5C60T-HL, STGIPQ5C60T-HZ
SLLIMM™ nano - 2nd series IPM, 3-phase inverter, 5 A, 600 V short-circuit rugged IGBTs
Datasheet - production data
Features• IPM 5 A, 600 V 3-phase IGBT inverter bridge
including 3 control ICs for gates driving and freewheeling diodes
• 3.3 V, 5 V and 15 V TTL/CMOS inputs comparators with hysteresis and pull down/pull up resistors
• Internal bootstrap diode
• Optimized for low electromagnetic interference
• Undervoltage lockout
• Short-circuit rugged TFS IGBTs
• Smart shutdown function
• Interlocking function
• Op-amp for advanced current sensing
• Comparator for fault protection against overcurrent
• NTC (UL 1434 CA 2 and 4)
• Isolation rating of 1500 Vrms/min
• Up to ±2 kV ESD protection (HBM C = 100 pF, R = 1.5 kΩ)
Applications• 3-phase inverters for motor drives
• Home appliances such as dish washer, refrigerator compressors, heating systems, air-conditioning fans, draining and recirculation pumps
DescriptionThis second series of SLLIMM (small low-loss intelligent molded module) nano provides a compact, high performance AC motor drive in a simple, rugged design. It is composed of six improved short-circuit rugged trench gate field-stop IGBTs with freewheeling diodes and three half-bridge HVICs for gate driving, providing low electromagnetic interference (EMI) characteristics with optimized switching speed. The package is designed to allow a better and easy screw on heatsink, it is optimized for thermal performance and compactness in built-in motor applications, or other low power applications where assembly space is limited. This IPM includes an operational amplifier, completely uncommitted, and a comparator that can be used to design a fast and efficient protection circuit. SLLIMM™ is a trademark of STMicroelectronics.
1. Applied between HINx, LINx and GND for x = U, V, W
VCE = 550 V, VCC = Vboot = 15 V - 250 µA
VCE(sat)Collector-emittersaturation voltage
VCC = VBoot = 15 V, VIN(1)= 0 to 5 V,
IC = 5 A, - 1.7 2.15 V
VF Diode forward voltage VIN(1) = 0 logic state, IC = 5 A - 2.1 V
Inductive load switching time and energy(2)
2. ton and toff include the propagation delay time of the internal drive. tC(ON) and tC(OFF) are the switching time of IGBT itself under the internally given gate driving condition.
Figure 8. Dead time and interlocking waveform definitions
INTE
RLO
CKI
NG
INTE
RLO
CKI
NG
INTE
RLO
CKI
NG
INTE
RLO
CKI
NGG
DocID026844 Rev 6 15/27
STGIPQ5C60T-HL, STGIPQ5C60T-HZ Smart shutdown function
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4 Smart shutdown function
The device integrates a comparator for fault sensing purposes. The comparator has an internal voltage reference VREF connected to the inverting input, while the non-inverting input on pin (CIN) can be connected to an external shunt resistor for simple overcurrent protection.
When the comparator triggers, the device is set to the Shutdown state and both its outputs are switched to the low-level setting, causing the half bridge to enter a tri-state.
In common overcurrent protection architectures, the comparator output is usually connected to the Shutdown input through an RC network that provides a mono-stable circuit which implements a protection time following a fault condition.
Our smart shutdown architecture immediately turns off the output gate driver in case of overcurrent along a preferential path for the fault signal which directly switches off the outputs. The time delay between the fault and output shutdown no longer depends on the RC values of the external network connected to the shutdown pin. At the same time, the DMOS connected to the open-drain output (pin T/SD/OD) is turned on by the internal logic, which holds it on until the shutdown voltage is lower than the logic input lower threshold (Vil).
Also, the smart shutdown function allows increasing the real disable time without increasing the constant time of the external RC network.
An NTC thermistor for temperature monitoring is internally connected in parallel to the SD pin. To avoid undesired shutdown, keep the voltage VT/SD/OD higher than the high-level logic threshold by setting the pull-up resistor RSD to 1 kΩ or 2.2 kΩ for the 3.3 V or 5 V MCU power supplies, respectively.
Smart shutdown function STGIPQ5C60T-HL, STGIPQ5C60T-HZ
16/27 DocID026844 Rev 6
Figure 9. Smart shutdown timing waveforms in case of overcurrent event
SHUT DOWN CIRCUIT
An approximation of the disable time is given by:
HIN/LIN
HVG/LVG
open drain gate(internal)
comp Vref
CP+
PROTECTION
Fast shut down:the driver outputs are set to the SD state as soon as the comparatortriggers even if the SD signal hasn’t reached the lower input threshold
• HIN and LIN are active-high logic input signals, each having an integrated 500 kΩ (typ.) pull-down resistor. Wire each input as short as possible and use RC filters (R1, C1) on each to prevent input signal oscillation. The filters should have a time constant of approximately 100 ns and must be placed as close as possible to the IPM input pins.
• Use a bypass capacitor Cvcc (aluminum or tantalum) to reduce the transient circuit demand on the power supply and a decoupling capacitor C2 (from 100 to 220 nF, ceramic with low ESR), placed as close as possible to each Vcc pin and in parallel to the bypass capacitor, to reduce high frequency switching noise distributed on the power supply lines.
• To prevent circuit malfunction, place an RC filter (RSF, CSF) with a time constant (RSF x CSF) of 1µs as close as possible to the CIN pin.
• The SD is an input/output pin (open drain type if used as output). An integrated NTC thermistor is connected internally between the SD pin and GND. The pull-up resistor RSD causes the voltage VSD-GND to decrease as the temperature increases. To always maintain the voltage above the high-level logic threshold, use a 1 kΩ or 2.2 kΩ pull-up resistor for a 3.3 V or 5 V MCU power supply, respectively. Size the filter on SD appropriately to obtain the desired re-start time after a fault event, and locate it as close as possible to the SD pin.
• Filter high-frequency disturbances by placing the decoupling capacitor C3 (from 100 to 220 nF, ceramic with low ESR) in parallel with each Cboot.
• Prevent overvoltage with Zener diodes DZ1 between the VCC pins and GND and in parallel with each Cboot.
• Locate the decoupling capacitor C4 (from 100 to 220 nF, ceramic with low ESR) in parallel with the electrolytic capacitor Cvdc to prevent surge destruction. Place capacitors C4 (especially) and Cvdc as close as possible to the IPM.
• By integrating an application-specific type HVIC inside the module, direct coupling to the MCU terminals without an opto-coupler is possible.
• Use low inductance shunt resistors for phase leg current sensing.
• The wiring between N pins, the shunt resistor and PWR_GND should be as short as possible.
• Connect SGN_GND to PWR_GND at only one point (near the shunt resistor terminal), to avoid any malfunction due to power ground fluctuation.
Table 14. Recommended operating conditions
Symbol Parameter Test condition Min. Typ. Max. Unit
VPN Supply voltageApplied between P-Nu,Nv,Nw
300 500 V
VCC Control supply voltage Applied between Vcc-GND 13.5 15 18 V
VBS High side bias voltageApplied between Vbootx-OUT for x=U,V,W
Figure 15. Eoff switching loss vs collector current
Figure 16. Thermal impedance for N2DIP-26L IGBT
Package mechanical data STGIPQ5C60T-HL, STGIPQ5C60T-HZ
22/27 DocID026844 Rev 6
8 Package mechanical data
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