Silicon N-Channel Power MOSFET HGQ011N03A-G

General Description： V

A

A

W

mΩ

Features：

Fast Switching

Low ON Resistance

Low Gate Charge

Low Reverse transfer capacitances

100% Single Pulse avalanche energy Test

Halogen Free

Applications：

Power switch circuit of adaptor and charger.

VDSS Drain-to-Source Voltage 30 V

Continuous Drain Current TC = 100 °C (Package limited) 100 A

IDM

a1 Pulsed Drain Current TC = 25 °C 400 A

ID

Continuous Drain Current TC = 25 °C（Silicon limited） 300 A

Continuous Drain Current TC = 25 °C (Package limited) 100 A

®

HGQ011N03A-G

Silicon N-Channel Power MOSFET

147

Absolute（Tj= 25 unless otherwise specified）：

Symbol Rating UnitsParameter

HGQ011N03A-G, the silicon N-channel Enhanced VDMOSFETs, is

obtained by the high density Trench technology which reduce the

conduction loss, improve switching performance and enhance the

avalanche energy. This device is suitable for use as A load switch and

PWM applications. the package form is PDFN5*6, which accords with the

RoHS standard.

RDS(ON)Typ 0.75

VDSS 30

ID（Silicon limited） 300

ID（Package limited） 100

PD

Power Dissipation TC = 25 °C 147 W

Derating Factor above 25°C 1.17 W/

PD

±18 V

EAS

a2 Avalanche Energy 625 mJ

VGS Gate-to-Source Voltage

150，–55 to 150 TJ，Tstg Operating Junction and Storage Temperature Range

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2020V01

Electrical Characteristics（Tj= 25 unless otherwise specified）：

Min. Typ. Max.

30 -- --

-- -- 1

-- -- 100

-- -- 100

-- -- -100

Min. Typ. Max.

-- 0.75 1

-- 1.2 1.5

0.9 1.35 1.8

Min. Typ. Max.

-- 1.29 --

-- 4849 --

-- 3665 --

-- 565 --

Min. Typ. Max.

-- 20 --

-- 20.4 --

-- 72.8 --

-- 23.6 --

-- 92.5 --

-- 10.7 --

-- 24.6 --

Symbol Parameter Test Conditions Units

OFF Characteristics

HGQ011N03A-G ®

Rating

VDSS Drain to Source Breakdown Voltage VGS=0V, ID=250µA V

VDS =30V, VGS= 0V,

Tj = 25

Units

Symbol Parameter Test ConditionsRating

Units

VGS=10V,ID=19A mΩ

Dynamic Characteristics

VGS=4.5V,ID=19A

ParameterSymbol Test ConditionsRating

ON Characteristics

IDSS Drain to Source Leakage Current µAVDS =24V, VGS= 0V,

Tj = 125

IGSS(F) Gate to Source Forward Leakage VGS=18V nA

RatingUnits

Output Capacitance

mΩ

VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 250µA V

RDS(ON) Drain-to-Source On-Resistance

IGSS(R) Gate to Source Reverse Leakage VGS=-18V nA

Symbol Parameter Test Conditions

td(OFF) Turn-Off Delay Time

Crss Reverse Transfer Capacitance

td(ON) Turn-on Delay Time

Resistive Switching Characteristics

Rg Gate resistance VGS=0V, VDS=0V, f=1MHz Ω

Ciss Input Capacitance

Coss

VGS = 0V

VDS = 15V

f = 1.0MHz

pF

VGS=10V

Rg=6Ω

VDD=15V

Id=50A

ns

tr Rise Time

VGS = 10V

VDD=15V

Id=19A

nCQgs Gate to Source Charge

Qgd Gate to Drain (“Miller”)Charge

tf Fall Time

Qg Total Gate Charge


HGQ011N03A-G ®

Min. Typ. Max.

-- -- 100

-- -- 400

-- -- 1.2

-- 83.2 --

-- 116.48 --

Notes:

a1：Repetitive rating; pulse width limited by maximum junction temperature

a2：L=0.5mH,Ias=50A Start TJ=25

a3：Recommend soldering temperature defined by IPC/JEDEC J-STD 020

Source-Drain Diode Characteristics

Symbol Parameter Test ConditionsRating

Units

IS Continuous Source Current (Body Diode)

ISM Maximum Pulsed Current (Body Diode)

Symbol Parameter

Pulse width tp≤300µs,δ≤2%

nC

Units

VSD Diode Forward Voltage

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

Max.

0.85

62.5

A

A

IS=19A,VGS=0V V

nsIS=19A

di/dt=100A/us,

VGS=0V

TC = 25 °C

/W

/W

RθJC

RθJA

Junction-to-Case

Junction-to-Ambient


HGQ011N03A-G ®

1

Characteristics Curve：

Figure 5 Maximum Effective Thermal Impedance , Junction to Case

Figure 3. Maximum Continuous Drain Current vs Case

TemperatureFigure 4. Typical output Characteristics

Figure 1 . Maximum Safe Operating Area Figure 2. Maximum Power Dissipation vs Case Temperature

1

10

100

1000

0.1 1 10 100

I D,D

rain

Cu

rren

t,A

VDS,Drain-to-Source Voltage,V

SINGLE PULSE

TC=25

TJ=150

Operation in This Areais Limited by RDS(on)

DC

10ms

1ms

100μs

10μs

0

20

40

60

80

100

120

140

160

0 25 50 75 100 125 150

PD,P

ow

er

Dis

sip

ati

on

,W

TC,Case Temperature,

0.001

0.01

0.1

1

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10

D=1

0.5

0.2

0.1

0.05

0.02

0.01

Single Pulse

T , Rectangular Pulse Duration [sec]

Z θJC

,Th

erm

al R

esp

on

se[

/W]

Notes:1.Duty Cycle, D=t1/t22.TJM = PDM*RθJA + TA

0

10

20

30

40

50

60

70

80

90

100

0 0.5 1 1.5 2

VDS,Drain-to-Source Voltage[V]

I D,D

rain

Cu

rre

nt[

A]

Note:

1.250us Pulse Test

2.Tc=25

Vgs=3.5V

Vgs=3.0V

Vgs=2.5V

Vgs=4~10V

0

50

100

150

200

250

300

350

25 50 75 100 125 150

I D,D

rain

Cu

rren

t,A

TC,Case Temperature,

This Areais Limited by Package


HGQ011N03A-G ®

1 1

Figure 8. Drain-to-Source On Resistance vs Drain Current Figure 9. Normalized On Resistance vs Junction Temperature

Figure10. Normalized Threshold Voltage vs Junction

Temperature

Figure 11. Normalized Breakdown Voltage vs Junction

Temperature

Figure 6 Typical Transfer Characteristics Figure 7 Typical Body Diode Transfer Characteristics

0.95

0.96

0.97

0.98

0.99

1

1.01

1.02

1.03

1.04

1.05

-50 0 50 100 150

BV

DS

S,(

No

rma

lize

d)

Dra

in-t

o-S

ou

rce B

rea

kd

ow

n V

olt

ag

e

TJ,Junction Temperature()

0.4

0.5

0.6

0.7

0.8

0.9

1

1.1

1.2

1.3

-50 0 50 100 150

VG

S(t

h),(N

orm

ali

ze

d)

Th

res

ho

ld V

olt

ag

e


VGS = VDS

ID = 250μA

0.00001

0.0001

0.001

0.01

0.1

1

10

100

1 1.5 2 2.5 3

I D,D

rain

Cu

rren

t[A

]

VGS,Gate-to-Source Voltage[V]

Note:1.VDS=5V2.250us Pulse Test

Tj=25

Tj=150

0.1

1

10

100

0 0.2 0.4 0.6 0.8 1 1.2

Is,S

ou

rce C

urr

en

t[A

]

VSD，Source-to-Drain Voltage[V]

Tj=25

Tj=150

0.8

0.9

1

1.1

1.2

1.3

1.4

1.5

-50 0 50 100 150

RD

S(o

n),(N

orm

ali

zed

)D

rain

-to

-So

urc

e O

n R

esis

tan

ce


PULSED TESTVGS = 10V/4.5VID = 19A

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

5 15 25 35 45 55 65 75 85 95

RD

S(o

n),D

rain

-to

-So

urc

e O

n

Re

sis

tan

ce,mΩ

ID,Drain Current,A

PULSED TEST

Tj = 25

VGS = 4.5V

VGS = 10V


HGQ011N03A-G ®

1 1

13

Figure 13 Typical Gate Charge vs Gate to Source VoltageFigure 12. Capacitance Characteristics

100

1000

10000

0 10 20 30

Cap

acit

an

ce,p

F

VDS,Drain-to-Source Voltage,V

Crss

Ciss

Coss

f = 1MHzCiss = Cgs+Cgd

Coss = Cds+Cgd

Crss = Cgd

0

2

4

6

8

10

0 50 100 150

Qg,Gate Charge[nC]

Vgs

,Gat

e-t

o-S

ou

rce

VDS=15VID=19A


HGQ011N03A-G ®

Test Circuit and Waveform

Figure 14. Gate Charge Test Circuit Figure 15. Gate Charge Waveforms

Figure 16. Resistive Switching Test Circuit Figure 17. Resistive Switching

Waveforms


HGQ011N03A-G ®

Figure20.Unclamped Inductive Switching Test Circuit Figure21.Unclamped Inductive Switching

Figure 18. Diode Reverse Recovery Test Circuit Figure 19. Diode Reverse Recovery Waveforms


HGQ011N03A-G ®

Package Information：

Values(mm)

SymbolMIN MAX

5.3

6.05

1.5

0.6

4.85

5.6

1.1

0.2

D2

E2

k

b

A

E 5.85 6.25

D1 3.81 4.21

E1 3.33 3.63

0.8 1.2

A3 0.15 0.35

D 5 5.35

L1 0.35 0.65

H 0.45 0.85

e 1.07 1.47

L 0.42 0.82

θ 8° 12°

PDFN5×6 Package


HGQ011N03A-G ®

1.

2.

3.

4.

When installing the heatsink, please pay attention to the torsional moment and the smoothness of the

heatsink.

Warnings

VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device

from being damaged by the static electricity when using it.

This publication is made by Huajing Microelectronics and subject to regular change without notice.

The name and content of poisonous and harmful material in products

Exceeding the maximum ratings of the device in performance may cause damage to the device, even the

permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80

percent of the maximum ratings of the device.

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

Add： No.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061 http://www. crhj.com.cn

Tel: +86 0510-85807228 Fax: +86- 0510-85800864

Marketing Part： Post：214061 Tel： +86 0510-81805277/81805336

Fax: +86 0510-85800360/85803016

Application and Service：Post：214061 Tel / Fax：+86- 0510-81805243/81805110


Silicon N-Channel Power MOSFET HGQ011N03A-G

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