1 C2M0280120D Rev - C2M0280120D Silicon Carbide Power MOSFET Z-FET TM MOSFET N-Channel Enhancement Mode Features • High Speed Switching with Low Capacitances • High Blocking Voltage with Low R DS(on) • Easy to Parallel and Simple to Drive • Resistant to Latch-Up • Halogen Free, RoHS Compliant Benefits • Higher System Efficiency • Increased System Switching Frequency • Reduced Cooling Requirements • Increased System Reliability Applications • Lighting • High Voltage DC/DC Converters • Switch Mode Power Supplies • HVAC Package TO-247-3 Part Number Package C2M0280120D TO-247-3 V DS 1200 V I D @ 25˚C 10 A R DS(on) 280 mΩ Maximum Ratings (T C = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note I DS (DC) Continuous Drain Current 10 A V GS = 20 V, T C = 25 °C Fig. 19 6 V GS = 20 V, T C = 100 °C I DS (pulse) Pulsed Drain Current 20 A Pulse width t P limited by T jmax T C = 25 °C Fig. 22 V GS Gate Source Voltage -10/+25 V P tot Power Dissipation 62.5 W T C =25 °C, TJ = 150 °C Fig. 20 T J , T stg Operating Junction and Storage Temperature -55 to +150 ˚C T L Solder Temperature 260 ˚C 1.6 mm (0.063”) from case for 10s M d Mounting Torque 1 8.8 Nm lbf-in M3 or 6-32 screw
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Cree C2M0280120D Silicon Carbide Power MOSFET · 1 C2M0280120D Rev - C2M0280120D Silicon Carbide Power MOSFET Z-FET TM MOSFET N-Channel Enhancement Mode Features • High Speed Switching
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1 C2M0280120D Rev -
C2M0280120DSilicon Carbide Power MOSFET Z-FET
TM MOSFET
N-Channel Enhancement Mode Features
• High Speed Switching with Low Capacitances• High Blocking Voltage with Low RDS(on)• Easy to Parallel and Simple to Drive• Resistant to Latch-Up• Halogen Free, RoHS Compliant
Benefits
• HigherSystemEfficiency• Increased System Switching Frequency• Reduced Cooling Requirements• Increased System Reliability
Applications
• Lighting • High Voltage DC/DC Converters• Switch Mode Power Supplies• HVAC
Package
TO-247-3
Part Number Package
C2M0280120D TO-247-3
VDS 1200 V
ID @ 25˚C 10 A
RDS(on) 280 mΩ
Maximum Ratings (TC=25˚Cunlessotherwisespecified)
Symbol Parameter Value Unit Test Conditions Note
IDS (DC) Continuous Drain Current10
AVGS = 20 V, TC = 25 °C
Fig. 196 VGS = 20 V, TC = 100 °C
IDS (pulse) Pulsed Drain Current 20 A Pulse width tP limited by Tjmax
TC = 25 °CFig. 22
VGS Gate Source Voltage -10/+25 V
Ptot Power Dissipation 62.5 W TC=25 °C, TJ = 150 °C Fig. 20
TJ , Tstg Operating Junction and Storage Temperature -55 to +150 ˚C
TL Solder Temperature 260 ˚C 1.6 mm (0.063”) from case for 10s
• RoHSCompliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REAChCompliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiacdefibrillatorsorsimilaremergencymedicalequipment,aircraftnavigationorcommunicationorcontrolsystems,airtrafficcontrolsystems.
Notes
1 C2M0040120D Rev -
C2M0040120DSilicon Carbide Power MOSFET Z-FET
TM MOSFET
N-Channel Enhancement Mode Features
• High Speed Switching with Low Capacitances• High Blocking Voltage with Low RDS(on)• Easy to Parallel and Simple to Drive• Resistant to Latch-Up• Halogen Free, RoHS Compliant
Benefits
• HigherSystemEfficiency• Increased System Switching Frequency• Reduced Cooling Requirements• Increased System Reliability
Applications
• Solar Inverters• Switch Mode Power Supplies• High Voltage DC/DC converters• Motor Drive
Package
TO-247-3
Part Number Package
C2M0040120D TO-247-3
VDS 1200 V
ID @ 25˚C 60 A
RDS(on) 40 mΩ
Maximum Ratings (TC=25˚Cunlessotherwisespecified)
Symbol Parameter Value Unit Test Conditions Note
IDS (DC) Continuous Drain Current60
AVGS = 20 V, TC = 25 °C
Fig. 1940 VGS = 20 V, TC = 100 °C
IDS (pulse) Pulsed Drain Current 160 A Pulse width tP limited by Tjmax
TC = 25 °CFig. 22
VGS Gate Source Voltage -10/+25 V
Ptot Power Dissipation 330 W TC=25 °C, TJ = 150 °C Fig. 20
TJ , Tstg Operating Junction and Storage Temperature -55 to +150 ˚C
TL Solder Temperature 260 ˚C 1.6 mm (0.063”) from case for 10s
• RoHSCompliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REAChCompliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiacdefibrillatorsorsimilaremergencymedicalequipment,aircraftnavigationorcommunicationorcontrolsystems,airtrafficcontrolsystems.